Ericsson PTF10119 Datasheet

PTF 10119
12 Watts, 2.1–2.2 GHz

GOLDMOS

™

Field Effect Transistor

Description

The PTF 10119 is an internally matched, common source, N-channel
enhancement-mode lateral MOSFET intended for WCDMA
applications from 2.1 to 2.2 GHz. It is rated at 12 watts power output.
Nitride surface passivation and gold metallization ensure excellent
device reliability.

Typical Output Pow er vs. Input Pow er

20

16

12

•

INTERNALLY MATCHED

• Performance at 2.17 GHz, 28 Volts

- Output Power = 12 Watts Min

- Power Gain = 11 dB Typ

- Efficiency = 43% Typ @ P-1dB

• Full Gold Metallization

• Silicon Nitride Passivated

• Back Side Common Source

• Excellent Thermal Stability

• 100% lot traceability

10119

A-1234560053

8

4

Output Power (Watts)

0

0 0.2 0.4 0.6 0.8 1 1.2

Input Power (Wa tts)

VDD = 28 V

= 160 mA

I

DQ

f = 2170 MHz

Package 20222

Maximum Ratings

Parameter Symbol Value Unit

Drain-Source Voltage V
Gate-Source Voltage V
Operating Junction Temperature T
Total Device Dissipation at T

Above 25°C derate by 0.31 W/°C
Storage Temperature Range T

Thermal Resistance (T

flange

= 25°C P

flange

= 70°C) R

DSS

GS

J
D

STG

qJC

65 Vdc
±20 Vdc
200 °C

55 Watts

–40 to +150 °C

3.2 °C/W

e

1

PTF 10119

0

W

A

V

E

L

e

Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Typ Max Units

Drain-Source Breakdown Voltage VGS = 0 V , ID = 50 mA V

(BR)DSS

Zero Gate Voltage Drain Current VDS = 26 V , VGS = 0 V I
Gate Threshold Voltage VDS = 10 V , ID = 75 mA V
Forward Transconductance VDS = 10 V , ID = 2 A g

DSS

GS(th)

fs

65 — — V olts

— — 1.0 mA

3.0 — 5.0 Volts
— 0.8 — Siemens

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Gain

(V

Power Output at 1 dB Compressed

(V

Drain Efficiency

(V

Load Mismatch Tolerance

(V
—all phase angles at frequency of test)

= 28 V, P

DD

= 28 V, IDQ = 160 mA, f = 2.17 GHz) p-1dB 12 14 — Watts

DD

= 28 V, P

DD

= 28 V, P

DD

= 3 W, IDQ = 160 mA, f = 2.11, 2.17 GHz) G

OUT

= 12 W, IDQ = 160 mA, f = 2.17 GHz) h

OUT

= 12 W, IDQ = 160 mA, f = 2.17 GHz Y — — 10:1 —

OUT

ps

D

10 11 — dB

30 43 — %

Impedance Data

5

4

.

0

VDS = 28 V, P

= 12 W, IDQ = 160 mA

OUT

D

Z Source Z Load

Z0 = 50 W

3

.

0

2

.

0

G

0.3

2.30 GHz

0.5

0.4

1

.

S

Frequency Z Source W Z Load W

GHz R jX R jX

0

2.30 GHz

0

.

0

Z Load

2.00 GHz

0.1

0.2

2.00 5.7 -12.11 3.30 1.21

2.10 16.4 -19.50 3.55 0.92

2.12 19.7 -18.82 4.12 0.88

2.15 22.8 -14.14 3.75 0.62

1

.

0

-

-

­<

2

.

0

Z Source

2.00 GHz

2.17 23.0 -13.15 3.53 0.34

2.20 26.6 -9.28 3.32 0.38

2.30 20.2 12.03 3.23 0.84

3

.

0

5

2