Ericsson PTF10107 Datasheet
PTF 10107
5 Watts, 2.0 GHz
GOLDMOS® Field Effect Transistor
Description
The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal
applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with
11 dB gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
Typical Output Pow e r & Efficie ncy
vs. Input Power
8
7
6
5
4
3
2
1
Output Power (Watts)
0
0.0 0.1 0.2 0.3 0.4 0.5
Output Power
VDD = 26 V
I
= 70 mA
DQ
f = 2.0 GHz
Inp u t Power (Watts)
Eff iciency
100
80
60
40
20
0
Efficiency (%) X
• Guaranteed Performance at 1.99 GHz, 26 V
- Output Power = 5 Watts Min
- Power Gain = 11 dB Min
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability
10107
A-1234569845
Package 20244
RF Specifications (100% T ested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Power Output at 1 dB Compression
(V
Drain Efficiency
(V
Load Mismatch Tolerance
(V
—all phase angles at frequency of test)
All published data at T
= 26 V , P
DD
= 26 V , IDQ = 70 mA, f = 1.99 GHz) P-1dB 5 6.5 — Watts
DD
= 26 V , P
DD
= 26 V , P
DD
= 1 W, IDQ = 70 mA, f = 1.93, 1.99 GHz) G
OUT
= 5 W, IDQ = 70 mA, f = 1.99 GHz) h
OUT
= 5 W, IDQ = 70 mA, f = 1.99 GHz Y — — 10:1 —
OUT
= 25°C unless otherwise indicated.
CASE
ps
D
11 — — dB
40 — — %
e
1
PTF 10107
G
-
e
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min T yp Max Units
Drain-Source Breakdown Voltage VGS = 0 V , ID = 20 mA V
(BR)DSS
Zero Gate Voltage Drain Current VDS = 26 V , VGS = 0 V I
Gate Threshold Voltage VDS = 10 V , ID = 75 mA V
Forward Transconductance VDS = 10 V , ID = 2 A g
DSS
GS(th)
fs
65 ——Volts
——1.0 mA
3.0 — 5.0 Volts
— 0.8 — Siemens
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
Gate-Source Voltage V
Operating Junction T emperature T
T otal Device Dissipation at P
DSS
GS
J
D
Above 25°C derate by 0.22 W/°C
Storage T emperature Range T
Thermal Resistance (T
= 70°C) R
CASE
STG
qJC
65 Vdc
±20 Vdc
200 °C
39 Watts
–40 to +150 °C
4.5 °C/W
Typical Performance
P
, Gain & Efficiency
OUT
15
13
ain (dB)
11
VDD = 26 V
9
I
= 70 mA
DQ
7
Gain & Output Power x
Output Power
5
1750 1800 1850 1900 1950 2000 2050
(at P-1dB)
Efficiency (%)
F requency (MHz)
vs. Freque ncy
65
55
45
35
25
15
Efficiency
Broadba nd Test Fixture Performa nce
14
Gain (dB)
12
= 70 mA
DQ
= 4 W
OUT
Efficiency (%)
10
8
Gain
6
4
2
1925 1950 1975 2000
Return Loss (dB)
VCC = 26 V
I
P
Freque ncy (MHz)
60
50
40
- 5
30
-15
20
10
-25
0
35
Efficiency
Return Loss
2
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