Epson S1F77B01 User Manual

Power Supply IC

S1F77B01

Technical Manual

SEIKO EPSON CORPORATION

Rev.1.3

NOTICE

No part of this material may be reproduced or duplicated in any form or by any means without the written
permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.
Seiko Epson does not assume any liability of any kind arising out of any inaccuracies contained in this material
or due to its application or use in any product or circuit and, further, there is no representation that this material is
applicable to products requiring high level reliability, such as, medical products. Moreover, no license to any
intellectual property rights is granted by implication or otherwise, and there is no representation or warranty that
anything made in accordance with this material will be free from any patent or copyright infringement of a third
party. This material or portions thereof may contain technology or the subject relating to strategic products
under the control of the Foreign Exchange and Foreign Trade Law of Japan and may require an export license
from the Ministry of International Trade and Industry or other approval from another government agency.

All other product names mentioned herein are trademarks and/or registered trademarks of their respective
companies.

©SEIKO EPSON CORPORATION 2006, All rights reserved.

Configuration of product number

zDEVICES

S1 F 77B01 B 0C00 00



Packing specifications
Specifications
Shape

(B:WCSP, Y:SOT)

Model number
Model name

(F : Power Supply)

Product classification

(S1:Semiconductors)

CONTENTS

1. DESCRIPTION.................................................................................................................................1

2. FEATURES ......................................................................................................................................1

3. PACKAGE........................................................................................................................................1

4. APPLICATION .................................................................................................................................1

5. BLOCK DIAGRAM...........................................................................................................................2

6. SELECTION GUIDE.........................................................................................................................3

7. PIN ASSIGNMENT...........................................................................................................................3

8. MARKING ........................................................................................................................................4

9. MARKING ........................................................................................................................................5

10. PIN DESCRIPTION..........................................................................................................................6

11. ABSOLUTE MAXIMUM RATINGS ..................................................................................................6

12. TIMING CHARTS AND RECOMMENDED CIRCUIT DIAGRAMS...................................................7

13. ELECTRICAL CHARACTERISTICS, DELAY CIRCUIT BUILT-IN PRODUCTS..............................8

14. CHARACTERISTIC MEASURING CIRCUITS.................................................................................9

15. DIMENSIONS.................................................................................................................................12

16. CHARACTERISTIC EXAMPLE .....................................................................................................14

S1F77B01 Technical Manual (Rev.1.3) EPSON i

1. DESCRIPTION

1. DESCRIPTION

The S1F77B01 is a CMOS detector that runs at superlow consumption current 350nA (Typ.).
The detecting voltage can be selected in the range from 1.5V to 4.6V which is set to high accuracy ±2.0% in

0.1V steps. The power voltage is allowable in the range of low voltage 0.9 to 5.5V.
This detector adopts a compact package, which is available in a compact mobile device.

2. FEATURES

• Superlow power consumption: 350nA (VDD=3.0V, Typ.)

• Range of detecting voltage: 1.5 to 4.6V (in 0.1V steps)

• Accuracy of detecting voltage: ±2.0%

• Hysteresis characteristics: 5.0% Typ.

• Temperature characteristics of detecting voltage: ±100 ppm/°C (Typ.)

• Output type: CMOS, Nch open drain

3. PACKAGE

SOT23 5pin
WCSP 4pin

4. APPLICATION

• Microcomputer and logic circuit resetting

• Battery checker

• Level discriminator

• Waveform rectifier circuit

• Backup power switching circuit

• Power failure detector

• Overcurrent protection circuit

S1F77B01 Technical Manual (Rev.1.3) EPSON 1

5. BLOCK DIAGRAM

5. BLOCK DIAGRAM

zCMOS output

zNch open drain output

Note: SOT23 package product only; otherwise, a product with DS pin set to NC

The DS pin must be fixed to “LOW” outside the IC.

V

DD

DS*

DD

V

DS*

VREF

Delay circuit

VREF

Delay circuit

V

V

V

V

OUT

SS

OUT

SS

2 EPSON S1F77B01 Technical Manual (Rev.1.3)

6. SELECTION GUIDE

S1F77B01 *
a b c d e

a Package type

b Indicates a value that is ten times the detecting voltage.
c For CMOS output, delay 50ms “C”

For CMOS output, delay 100ms “D”
For CMOS output, delay 200ms “E”
For Nch open drain output, delay 50ms “L”
For Nch open drain output, delay 100ms “M”

For Nch open drain output, delay 200ms “N”
d Fixed to 0 in this IC.
e Taping form

7. PIN ASSIGNMENT

SOT23 5PIN




DD

V

5

1 3

DS

2

SS

V

* * * 0 * *

SOT23 5PIN “Y”

WCSP 4PIN “B”

TR type “0R”

VOUT

4

NC

WCSP 4PIN



Top View

6. SELECTION GUIDE

V

DD

DS

VOUT

3

4

1 2

VSS

S1F77B01 Technical Manual (Rev.1.3) EPSON 3

8. MARKING

8. MARKING

SOT23 5PIN WCSP 4PIN

5

a b c

1 2

d e

4

a

b

: Product code

e

c

3

CMOS

Vdet-

Option

1.5V B 5 B 5 B _5

1.6V B 6 B 6 B _6

1.7V B 7 B 7 B _7

1.8V B 8 B 8 B _8

1.9V B 9 B 9 B _9

2.0V J 0 J 0 J _0

2.1V J 1 J 1 J _1

2.2V J 2 J 2 J _2

2.3V J 3 J 3 J _3

2.4V J 4 J 4 J _4

2.5V J 5 J 5 J _5

2.6V J 6 J 6 J _6

2.7V J 7 J 7 J _7

2.8V J 8 J 8 J _8

2.9V J 9 J 9 J _9

3.0V J A J A J _A

3.1V J B J B J _B

3.2V J C J C J _C

3.3V J D J D J _D

3.4V J E J E J _E

3.5V J F J F J _F

3.6V J G J G J _G

3.7V J H J H J _H

3.8V J J J J J _J

3.9V J K J K J _K

4.0V J L J L J _L

4.1V J M J M J _M

4.2V J N J N J _N

4.3V J P J P J _P

4.4V J Q J Q J _Q

4.5V J R J R J _R

4.6V J S J S J _S

: Lot code

d

Delay time 50ms Delay time 100ms Delay time 200ms

a b a b a b

34

d

b

a

c

1

2

Top View

a

: Product code

b

: Lot code

c d

4 EPSON S1F77B01 Technical Manual (Rev.1.3)

9. MARKING

SOT23 5PIN WCSP 4PIN

5

a

b c d e

1 2

4

a

b

: Product code

c

e

: Lot code

d

3

Nch open drain

Vdet-

Option

1.5V B 5 B 5 B _5

1.6V B 6 B 6 B _6

1.7V B 7 B 7 B _7

1.8V B 8 B 8 B _8

1.9V B 9 B 9 B _9

2.0V J 0 J 0 J _0

2.1V J 1 J 1 J _1

2.2V J 2 J 2 J _2

2.3V J 3 J 3 J _3

2.4V J 4 J 4 J _4

2.5V J 5 J 5 J _5

2.6V J 6 J 6 J _6

2.7V J 7 J 7 J _7

2.8V J 8 J 8 J _8

2.9V J 9 J 9 J _9

3.0V J A J A J _A

3.1V J B J B J _B

3.2V J C J C J _C

3.3V J D J D J _D

3.4V J E J E J _E

3.5V J F J F J _F

3.6V J G J G J _G

3.7V J H J H J _H

3.8V J J J J J _J

3.9V J K J K J _K

4.0V J L J L J _L

4.1V J M J M J _M

4.2V J N J N J _N

4.3V J P J P J _P

4.4V J Q J Q J _Q

4.5V J R J R J _R

4.6V J S J S J _S

Delay time 50ms Delay time 100ms Delay time 200ms

a b a b a b

34

d

abc

2

1

Top View

a

: Product code

b

: Lot code

c d

9. MARKING

S1F77B01 Technical Manual (Rev.1.3) EPSON 5

10. PIN DESCRIPTION

10. PIN DESCRIPTION

For SOT-23-5

Pin No. Pin Name Function

1 DS Fixed to “LOW”.
2 VSS GND pin.
3 NC No connection
4 VOUT Voltage detection output pin
5 VDD Power input pin

For WCSP

Pin No. Pin Name Function

1 DS Fixed to “LOW”.
2 VSS GND pin.
3 VDD Voltage output pin
4 VOUT Power detection output pin

11. ABSOLUTE MAXIMUM RATINGS

a=25°C RL=∞ unless otherwise specified)

(T

Item Symbol Rating Unit

Power voltage VDD-VSS 7.0 V

Output voltage

Output current IOUT 20 mA

Allowable dissipation PD

Guaranteed operating temperature range Topr -40 to +85 °C
Storage temperature range Tstg -40 to +125 °C

Note: To stabilize the IC, insert the decoupling capacitor between V

Nch open drain output VSS-0.3V to 7.0
CMOS output

VOUT

SOT23 300 mW

WCSP 100 mW

VSS-0.3V to VDD+0.3V

DD and VSS.

V

6 EPSON S1F77B01 Technical Manual (Rev.1.3)

12. TIMING CHARTS AND RECOMMENDED CIRCUIT DIAGRAMS

12. TIMING CHARTS AND RECOMMENDED CIRCUIT DIAGRAMS

zCMOS

Power
voltage
V

DD

Output
voltage

zNch open drain

Power
voltage
V

DD

Output
voltage

Release voltage

V

DET+

Detecting voltage

DET-

V

Min. operating

voltage

V

SS

Release voltage

V

DET+

Detecting voltage

DET-

V

Min. operating

voltage

VSS

Hysteresis width

Hysteresis width

td

td

VDD

V

V

SS

VDD

VSS

V

OUT

OUT

DS

Recommended circuit diagram

DS

Recommended circuit diagram

V

R
470kΩ

V

S1F77B01 Technical Manual (Rev.1.3) EPSON 7

13. ELECTRICAL CHARACTERISTICS, DELAY CIRCUIT BUILT-IN PRODUCTS

13. ELECTRICAL CHARACTERISTICS, DELA Y CIRCUIT BUILT -IN PRODUCTS

(1) CMOS output

a=25°C RL=∞ unless otherwise specified)

(T

Item Symbol Conditions Min. Typ. Max. Unit

Detecting voltage VDET-

Hysteresis width VHYS VHYS=(VDET+)-(VDET-) VDET-*0.03 VDET-*0.05 VDET-*0.07 V

VDD=2.5V, VDET-(S)=1.5V

Consumption current 1 ISS1

Consumption current 2 ISS2

Max. operating voltage VDDH

Min. operating voltage VDDL

IOUTN

Output current

I

OUTP

Delay time td

Response time tPHL VDD: (VDET-(S))+1.0V ===> 0.9V

Detecting voltage

temperature

coefficient

∆V

∆Topt

DET

VDD=3.7V, VDET-(S)=2.7V

DD=5.5V, VDET-(S)=4.6V

V
VDD=1.3V, VDET-(S)=1.5V
VDD=2.5V, VDET-(S)=2.7V

DD=4.4V, VDET-(S)=4.6V

V

[Nch]

DD<VDET-

V

[Pch]

DD>VDET-

V

-40°C≦Topt≦85°C

(2) Nch open drain output

Item Symbol Conditions Min. Typ. Max. Unit

Detecting voltage VDET-

Hysteresis width VHYS VHYS=(VDET+)-(VDET-) VDET-*0.03 VDET-*0.05 VDET-*0.07 V

VDD=2.5V, VDET-(S)=1.5V

Consumption current 1 ISS1

Consumption current 2 ISS2

Max. operating voltage VDDH

Min. operating voltage VDDL

Output current of

output transistor

Leak current of output

transistor

Delay time td

Response time tPHL VDD: (VDET-(S))+1.0V ===> 0.9V

Detecting voltage

temperature

coefficient

IOUTN

ILEAK VDD=5.5V,VDS=5.5V

DET

∆V

∆Topt

VDD=3.7V, VDET-(S)=2.7V

DD=5.5V, VDET-(S)=4.6V

V
VDD=1.3V, VDET-(S)=1.5V
VDD=2.5V, VDET-(S)=2.7V

DD=4.4V, VDET-(S)=4.6V

V

[Nch]

VDD<VDET-

-40°C≦Topt≦85°C

-

VDET-(S)×0.98 VDET-(S) VDET-(S)×1.02 V

-

-

350 700

-

350 700

-

280 560

-

280 560

-

280 560

-

-

0.9
VDD=0.9V, VDS=0.5V 0.2 0.8 1.5
VDD=1.2V, VDS=0.5V 1.0 2.2 3.5

DD=2.4V, VDS=0.5V 5.5 6.8 8.1

V

VDD=3.0V,

DS=VDD-0.5V

V

VDD=4.0V,

DS=VDD-0.5V

V

DD=5.5V,

V

VDS=VDD-0.5V

-

2.5 4.5 7.0

4.5 6.2 8.0

6.5 8.2 9.8

350 700

nA

nA

-

5.5 V

-

-

V

mA

td=50ms 42.5 50 57.5

td=100ms 85 100 115

ms

td=200ms 170 200 230

-

-

±100

a=25°C RL=∞ unless otherwise specified)

(T

-

VDET-(S)×0.98 VDET-(S) VDET-(S)×1.02 V

-

-

350 700

-

350 700

-

280 560

-

280 560

-

280 560

-

-

0.9
VDD=0.9V, VDS=0.5V 0.2 0.8 1.5
VDD=1.2V, VDS=0.5V 1.0 2.2 3.5

DD=2.4V, VDS=0.5V 5.5 6.8 8.1

V

-

-

-

80 µs

-

ppm/°C

350 700

nA

nA

-

5.5 V

-

-

0.1 µA

-

V

mA

td=50ms 42.5 50 57.5

td=100ms 85 100 115

ms

td=200ms 170 200 230

-

-

±100

-

80 µs

-

ppm/°C

8 EPSON S1F77B01 Technical Manual (Rev.1.3)

14. CHARACTERISTIC MEASURING CIRCUITS

AB A

14. CHARACTERISTIC MEASURING CIRCUITS

DET-, VHYS, tPLH, td

V

VDD

SS1, ISS2

I

V

VDD

VDD VOUT

VSS

DS

A

Fig.1

Fig.2

V

5V

470kΩ

V

Note: No pull-up resistor for

: When fixed to DS=”LOW”

B: When fixed to DS=”HIGH”

DD

VSS, DS

CMOS output

OUT

V

S1F77B01 Technical Manual (Rev.1.3) EPSON 9

14. CHARACTERISTIC MEASURING CIRCUITS

IOUT Nch, ILEAK

OUT Pch

I

DD

V

V

VDD

VSS, DS

Fig.3

VOUT

VSS, DS

Fig.4

A

VV

V

A

10 EPSON S1F77B01 Technical Manual (Rev.1.3)

zDescription of tPHL

Input: VDD

VDD=VDET+ +1.0V
*3

VDD=0.9V

VOUT

Output:

VDD=VDET+ +1.0V

VOUT=VDD(0.9V)

SS

V

DET+ indicates the actual release voltage. VDET+=VDET-×1.05 (Typ.)

*3: V

(1) For CMOS output

tPHL provides the timeframe ranging from a time when the pulse voltage (VDET+)+1.0V → 0.9V is

applied to V

(2) Nch open drain output

DD, to a time when the output voltage reaches VDD/2.

tPHL provides the timeframe ranging from a time when the pulse voltage (VDET+)+1.0V → 0.9V is

applied to V
The output pin is pulled up with 470kΩ resistance and V

zDescription of

Input: V

DD

Output:

VOUT

(1) For CMOS output

DD, to a time when the output voltage reaches VDD/2.

td

VDD=VDET+ +1.0V

DD=0.9V

V

VOUT= 100 %

V

SS

td provides the timeframe ranging from a time when the pulse voltage 0.9V → (VDET+)+1.0V is

applied to V

(2) For Nch open drain output

DD, to a time when the output voltage reaches VDD/2.

td provides the timeframe ranging from a time when the pulse voltage 0.9V → (VDET+)+1.0V is

applied to V
The output pin is pulled up with 470kΩ resistance and V

DD, to a time when the output voltage reaches VDD/2.

14. CHARACTERISTIC MEASURING CIRCUITS

tPHL

50%

DD power for measurement.

td

50%

DD power for measurement.

S1F77B01 Technical Manual (Rev.1.3) EPSON 11

15. DIMENSIONS

y

15. DIMENSIONS

･SOT23 5PIN

5PIN 4PIN

E

3PIN 1PIN

D

b

A

2

A

Max.

A

1

e

l2

E

H

θ θ1

θ1 2.40

l2 1.00
θ 0.95

bi 0.80

U

S

Symbol

D
E

AMax.

AL 0 - 0.15
Ae

e
lo 0.3 - 0.5
C 0.1 - 0.26

L 0.2 - 0.6

L1

HE

y

Min. Nom. Max.

-

-

1.6 -

-

-

1.1 -

-

0.95 -

-

0.6 -

-

2.8 -

-

S

Dimention In Millmeters

2.9

-

1.40

-

0.1

L

L1

-

bi

θ

1 = 1mm

12 EPSON S1F77B01 Technical Manual (Rev.1.3)

2

･WCSP 4PIN

Top View

A1 CORNER

y

S

Bottom View

B

A

INDEX

S

SE

3

e

b

15. DIMENSIONS

E

D

A

A1 A2

1

e

[Unit: mm]

SD

e

1 2

A1 CORNER

Symbol

D 0.82
E 0.82 0.92 1.02

A
A1 0.18 0.21 0.24
A2

e1
e2
e3

b 0.23 0.26 0.29
x

y
SD
SE

Dimention In Millmeters

Min. Nom. Max.

-

-

0.40 -

-

0.50 -

-

0.50 -

-

0.71 -

-

-

-

-

0.25 -

0.92 1.02

-

0.67

-

0.08

-

0.05

0.25

-

S1F77B01 Technical Manual (Rev.1.3) EPSON 13

16. CHARACTERISTIC EXAMPLE

16. CHARACTERISTIC EXAMPLE

(1) Detecting voltage (2) Release voltage

7
6
5
4
3

VOUT[V]

VOUT[V]

2
1
0

0246

S1F77B01Y27000R

S1F77B01Y27000R

S1F77B01Y27000R

VDD[V]

VDD[V]

(3) Hysteresis width

7
6
5

S1F77B01Y27000R

S1F77B01Y27000R

4
3

VOUT[V]

VOUT[V]

2
1
0

0246

VDD[V]

VDD[V]

(4) Consumption current

S1F77B01Y15000R

700
600
500
400
300

ISS[nA]

ISS[nA]

200
100

0

S1F77B01Y15000R

0123456

VDD[V]

VDD[V]

7
6
5
4
3

VOUT[V]

VOUT[V]

2
1
0

0246

450
400
350
300
250
200

ISS[nA]

ISS[nA]

150
100

S1F77B01Y27000R

50

0

0123456

S1F77B01Y27000R

VDD[V]

VDD[V]

S1F77B01Y27000R

S1F77B01Y27000R

VDD[V]

VDD[V]

14 EPSON S1F77B01 Technical Manual (Rev.1.3)

16. CHARACTERISTIC EXAMPLE

(5) Nch output current VDS=0.5V (CMOS) (6) Pch output current VDS=0.5V (CMOS)

0.6

0.5

0.4

0.3

IOUT[mA]

IＯＵＴ[mA]

0.2

0.1
0

0 0.2 0.4 0.6 0.8 1

(7) Delay time (100ms) (8) Response time

Tek STOP

(9) Characteristics between detecting voltage and ambient temperature

1.550

1.530

1.510

1.490

検出電圧 Vdet-[V]

Detecting VDET-[V]

1.470

1.450

-50 -25 0 25 50 75 100

a=25°C unless otherwise specified

* T

S1F77B01Y27000R

S1F77B01Y27000R

VDD[V]

VDD[V]

S1F77B01Y27000R

S1F77B01M15000R

S1F77B01M15000R

温度 Te mperature[℃]

Temperature[°C]

S1F77B01Y27000R

20.00

18.00

16.00

14.00

12.00

10.00

8.00

IOUT[mA]

IOUT[mA]

6.00

4.00

2.00

0.00

0.00 1.00 2.00 3.00

Tek STOP

S1F77B01Y27000R

VDS[V]

VDS[V]

S1F77B01Y27000R

S1F77B01 Technical Manual (Rev.1.3) EPSON 15

International Sales Operations

AMERICA

EPSON ELECTRONICS AMERICA, INC.
HEADQUARTERS

150 River Oaks Parkway
San Jose, CA 95134, U.S.A.
Phone: [phone] FAX: [phone]

SALES OFFICES
Northeast

301 Edgewater Place, Suite 210
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Phone: [phone] FAX: [phone]

EUROPE

EPSON EUROPE ELECTRONICS GmbH
HEADQUARTERS

Riesstrasse 15
80992 Munich, GERMANY
Phone: [phone] FAX: [phone]

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8 The Square, Stockley Park, Uxbridge
Middx UB11 1FW, UNITED KINGDOM
Phone: [phone]
FAX: [phone]

Scotland Design Center

Integration House, The Alba Campus
Livingston West Lothian, EH54 7EG, SCOTLAND
Phone: [phone] FAX: [phone]

ASIA

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23F, Beijing Silver Tower 2# North RD DongSanHuan
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Phone: [phone] FAX: [phone]

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Telex: 65542 EPSCO HX

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LTD.

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Phone: [phone] FAX: [phone]

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Phone: [phone] FAX: [phone]

SEIKO EPSON CORPORATION
KOREA OFFICE

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Phone: [phone] FAX: [phone]

GUMI OFFICE

2F, Grand B/D, 457-4 Songjeong-dong,
Gumi-City, KOREA
Phone: [phone] FAX: [phone]

SEIKO EPSON CORPORATION
SEMICONDUCTOR OPERATIONS DIVISION

IC Sales Dept.
IC International Sales Group

421-8, Hino, Hino-shi, Tokyo 191-8501, JAPAN
Phone: [phone] FAX: [phone]

Document Code: 410800400

First Issue October 2006

Printed in JAPAN

○

H