EIC RBV806, RBV808, RBV810, RBV800, RBV801 Datasheet
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RBV800 - RBV810
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V
* Very good heat dissipation
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RBV
800
RBV
801
RBV
802
RBV
804
RBV
806
RBV
808
RBV
810
Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2"x3.2"x0.12" THK (8.2cm.x8.2cm.x0.3cm.) Al. Plate. heatsink.
UPDATE : AUGUST 3, 1998
∼∼
∼∼
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
* Ideal for printed circuit board
DC
RBV25
3.9 ± 0.2
C3
20 ± 0.3
13.5 ± 0.3
Dimensions in millimeters
30 ± 0.3
10++7.5
4.9 ± 0.2
∅3.2 ± 0.1
1.0 ± 0.1
7.5
11 ± 0.2
17.5 ± 0.5
2.0 ± 0.2
0.7 ± 0.1
RATING
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage V
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55°C I
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) I
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 4.0 Amps. V
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta = 100 °C I
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range T
Storage Temperature Range TSTG - 40 to + 150
SYMBOL
RMS
F(AV) 8.0
FSM 300
I2t
IR 10
R(H) 200 µ
RθJC
35 70 140 280 420 560 700 Volts
160
F 1.0
2.5
J - 40 to + 150 °
UNIT
Amps.
Amps.
A2S
Volts
µ
A
A
°
C/W
C
°
C
RATING AND CHARACTERISTIC CURVES ( RBV800 - RBV810 )
10
1.0
0
0
10
0.01
1.0
0.1
TJ = 50 °C
1.4
1.6
0.4
0.6
0.8
1.0
1.2
1.8
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
9.0
300
7.5
Tc = 50°C
6.0
4.5
AMPERES
3.0
1.5
HEAT-SINK MOUNTING,
3.2" x 3.2" x 0.12" THK.
(8.2cm x 8.2cm x 0.3cm)
Al.-PLATE
250
200
150
AMPERES
100
8.3 ms SINGLE HALF SINE WAVE
50
PEAK FORWARD SURGE CURRENT,
JEDEC METHOD
AVERAGE FORWARD OUTPUT CURRENT
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
2
NUMBER OF CYCLES AT 60Hz
10 20 601
4 6 40 100
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE PER DIODE
100
TJ = 100 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.1
FORWARD CURRENT, AMPERES
0.01
FORWARD VOLTAGE, VOLTS
TJ = 25 °C
MICROAMPERES
REVERSE CURRENT,
40 60 120
20
PERCENT OF RATED REVERSE
VOLTAGE, (%)
TJ = 25 °
80
100 1400
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