EIC RBV804D, RBV806D, RBV808D, RBV810D, RBV800D Datasheet
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RBV800D - RBV810D
FEATURES :
MECHANICAL DATA :
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RBV
800D
RBV
801D
RBV
802D
RBV
804D
RBV
806D
RBV
808D
RBV
810D
Notes :
UPDATE : AUGUST 3, 1998
∼∼
∼∼
±0.210±0.2
++
±0.2
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
* Very good heat dissipation
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
RBV25
C3
20 ± 0.3
13.5 ± 0.3
Dimensions in millimeters
30 ± 0.3
7.5
∅3.2 ± 0.1
1.0 ± 0.1
7.5
3.9 ± 0.2
4.9 ± 0.2
11 ± 0.2
17.5 ± 0.5
2.0 ± 0.2
0.7 ± 0.1
RATING
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55°C IF(AV) 8.0 Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) IFSM 300 Amps.
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 8.0 Amps. VF 1.0 Volts
Maximum DC Reverse Current Ta = 25 °C IR 10 µA
at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA
Typical Thermal Resistance (Note 1)
Typical Thermal Resistance at Junction to Ambient
Operating Junction Temperature Range TJ - 40 to + 150 °C
Storage Temperature Range TSTG - 40 to + 150 °C
1. Thermal Resistance from junction to case with units mounted on a 3.2"x3.2"x0.12" THK (8.2cm.x8.2cm.x0.3cm.) Al. Plate. heatsink.
SYMBOL
I2t
RθJC
RθJA
UNIT
166
2.2 °C/W
15 °C/W
A2S
RATING AND CHARACTERISTIC CURVES ( RBV800D - RBV810D )
10
1.0
0
0
0.1
10
0.01
1.0
0.1
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
12
HEAT-SINK MOUNTING,
10
Tc = 50°C
8.0
3.2" x 3.2" x 0.12" THK.
(8.2cm x 8.2cm x 0.3cm) Al.-PLATE
300
250
200
TJ = 50 °C
6.0
AMPERES
4.0
2.0
150
AMPERES
100
8.3 ms SINGLE HALF SINE WAVE
50
PEAK FORWARD SURGE CURRENT,
JEDEC METHOD
AVERAGE FORWARD OUTPUT CURRENT
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
NUMBER OF CYCLES AT 60Hz
10 20 601 2 4 6 40 100
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE PER DIODE
100
TJ = 100 °C
Pulse Width = 300 µs
1 % Duty Cycle
MICROAMPERES
REVERSE CURRENT,
TJ = 25 °C
TJ = 25 °C
80
FORWARD CURRENT, AMPERES
40 60 120
20
PERCENT OF RATED REVERSE
100 1400
VOLTAGE, (%)
0.01
0.6 0.8 1.0 1.2 1.8
0.4
1.4 1.6
FORWARD VOLTAGE, VOLTS
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