EIC RBV604D, RBV606D, RBV608D, RBV600D, RBV601D Datasheet
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RBV600D - RBV610D SILICON BRIDGE RECTIFIERS
FEATURES :
MECHANICAL DATA :
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RBV
600D
RBV
601D
RBV
602D
RBV
604D
RBV
606D
RBV
608D
RBV
610D
4.9 ± 0.2
3.9 ± 0.2
∼∼
∼∼
±0.210±0.2
++
±0.2
PRV : 50 - 1000 Volts
Io : 6.0 Amperes
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V
* Ideal for printed circuit board
* Very good heat dissipation
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
DC
RBV25
C3
20 ± 0.3
13.5 ± 0.3
Dimensions in millimeters
30 ± 0.3
7.5
∅3.2 ± 0.1
1.0 ± 0.1
7.5
11 ± 0.2
17.5 ± 0.5
2.0 ± 0.2
0.7 ± 0.1
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage V
Maximum RMS Voltage V
Maximum DC Blocking Voltage V
Maximum Average Forward Current Tc = 55°C I
SYMBOL
RRM
RMS
DC
F(AV)
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
6.0
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) I
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 6.0 Amps. V
Maximum DC Reverse Current Ta = 25 °C I
at Rated DC Blocking Voltage Ta = 100 °C I
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range T
Storage Temperature Range T
Notes :
1. Thermal Resistance from junction to case with units mounted on a 2.6"x1.4"x0.06" THK (6.5cm.x3.5cm.x0.15cm.) Al. Plate. Heatsink.
FSM
I2t
F
R
R(H)
RθJC
J
STG
300
127
1.0
10
200
2.2
- 40 to + 150
- 40 to + 150
UPDATE : AUGUST 3, 1998
UNIT
Volts
Volts
Volts
Amps.
Amps.
A2S
Volts
A
µ
A
µ
C/W
°
C
°
C
°
RATING AND CHARACTERISTIC CURVES ( RBV600D - RBV610D )
10
160
0.01
PERCENT OF RATED REVERSE
°
200
TJ = 100 °C
TJ = 25 °C
TJ = 25 °C
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
6.0
5.0
4.0
240
3.0
120
AMPERES
2.0
80
CURRENT, AMPERES
1.0
AVERAGE FORWARD OUTPUT
HEAT-SINK MOUNTING, Tc
2.6" x 1.4" x 0.06" THK.
(6.5cm x 3.5cm x 0.15cm) Al.-PLATE
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
PEAK FORWARD SURGE CURRENT,
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
10 20 601 2 4 6 40 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE PER DIODE
100
Pulse Width = 300 µs
1 % Duty Cycle
MICROAMPERES
REVERSE CURRENT,
FORWARD CURRENT, AMPERES
0.01
0.8 1.0 1.6
0.6
1.2 1.4 1.80.4
FORWARD VOLTAGE, VOLTS
80
VOLTAGE, (%)
100 1400 20 40 60 120
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