EIC ABR810, ABR808, ABR806, ABR804, ABR802 Datasheet
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ABR800 - ABR810
RECTIFIERS
FEATURES :
MECHANICAL DATA :
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Notes :
1 ) Thermal resistance from Junction to case with units mounted on a 3.2" x 3.2" x 0.12" ( 8.2 x 8.2 x 0.3 cm ) Al. plate. heatsink.
AVALANCHE BRIDGE
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* ldeal for printed circuit board
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
BR10
0.520 (13.20)
0.158 (4.00)
0.142 (3.60)
0.290 (7.36)
0.210 (5.33)
0.052 (1.32)
0.048 (1.22)
0.30 (7.62)
0.25 (6.35)
Dimensions in inches and ( millimeters )
0.480 (12.20)
AC
0.77 (19.56)
0.73 (18.54)
AC
0.75 (19.1)
Min.
RATING
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Minimum Avalanche Breakdown Voltage at 100 µA VBO(min.) 100 150 250 450 700 900 1100 Volts
Maximum Avalanche Breakdown Voltage at 100 µA VBO(max.) 550 600 700 900 1150 1350 1550 Volts
Maximum Average Forward Current Tc = 50°C IF(AV) 8.0 Amp.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) IFSM 300 Amps.
Rating for fusing at ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at IF = 4.0 Amps. VF 1.0 Volts
Maximum DC Reverse Current Ta = 25 °C IR 10 µA
at Rated DC Blocking Voltage Ta = 100 °C IR(H) 10.0 mA
Typical Thermal Resistance ( Note 1 ) RθJC 2.5 °C/W
Operating Junction Temperature Range TJ - 50 to + 150 °C
Storage Temperature Range TSTG - 50 to + 150 °C
SYMBOL
I2t
ABR
800
ABR
801
ABR
802
ABR
804
160
ABR
806
ABR
808
ABR
810
UNITS
A2S
UPDATE : APRIL 21, 1998
RATING AND CHARACTERISTIC CURVES ( ABR800 - ABR810)
0
0
0
HEAT-SINK MOUNTED ON
8.3 ms SINGLE SINE WAVE
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
10
300
8.0
6.0
4.0
CURRENT, AMPERES
2.0
3.2" x 3.2" x0.12"
(8.2x8.2x0.3 cm.) Al. PLATE
AVERAGE FORWARD OUTPUT
0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100
CASE TEMPERATURE, ( °C)
240
180
120
CURRENT, AMPERES
60
PEAK FORWARD SURGE
JEDEC METHOD
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
100 10
TJ = 100 °C
10
1.0 0.1
0.1
TJ = 25 °C
Pulse Width = 300 µs
1% Duty Cycle
FORWARD CURRENT, AMPERES
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
1.0
TJ = 25 °C
0.01
REVERSE CURRENT, MICROAMPERES
20 40 60 120
80
100 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
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