EIC ABR5010, ABR5008, ABR5006, ABR5004, ABR5002 Datasheet
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ABR5000 - ABR5010
AVALANCHE BRIDGE
RECTIFIERS
PRV : 50 - 1000 Volts
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* ldeal for printed circuit board
MECHANICAL DATA :
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ABR
5000
ABR
5001
ABR
5002
ABR
5004
ABR
5006
ABR
5008
ABR
5010
I2t
Notes :
1 ) Thermal resistance from junction to case with units mounted on heatsink.
UPDATE : NOVEMBER 1,1998
Metal Heatsink
0.688(17.40)
0.530(13.40)
0.618(15.70)
1.120(28.40)
0.200(5.10)
0.618(15.70)
0.028(0.71)
0.280(7.11)
Io : 50 Amperes
BR50
0.728(18.50)
* Case : Molded plastic with heatsink integrally
RATING
SYMBOL
0.570(14.50)
0.658(16.70)
0.032(0.81)
0.310(7.87)
0.685(16.70)
0.210(5.30)
0.252(6.40)
0.248(6.30)
0.905(23.0)
0.826(21.0)
φ
Dimensions in inches and ( millimeters )
1.130(28.70)
0.100(2.50)
0.090(2.30)
UNIT
Maximum Recurrent Peak Reverse Voltage V
Maximum RMS Voltage V
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Minimum Avalanche Breakdown Voltage at 100 µA
Maximum Avalanche Breakdown Voltage at 100 µA
Maximum Average Forward Current Tc = 50°C I
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) I
Rating for fusing at ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at IF = 25 Amps. VF 1.1 Volts
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta = 100 °C I
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range T
Storage Temperature Range TSTG - 50 to + 150
RRM
RMS
VBO(min.) 100 150 250 450 700 900 1100 Volts
VBO(max.) 550 600 700 900 1150 1350 1550 Volts
F(AV)
FSM
IR 10 µ
R(H)
RθJC
J
50 100 200 400 600 800 1000 Volts
35 70 140 280 420 560 700 Volts
50 Amps.
400 Amps.
660
200
1
- 50 to + 150
A2S
µ
°
C/W
A
A
°
C
°
C
RATING AND CHARACTERISTIC CURVES ( ABR5000 - ABR5010)
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT
FORWARD SURGE CURRENT
100
125
150
175
400
500
300
20
8.3 ms SINGLE SINE WAVE
JEDEC METHOD
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
0 25 50 75
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
100 10
10
1.0
0.1
TJ = 25 °C
Pulse Width = 300 µs
1% Duty Cycle
FORWARD CURRENT, AMPERES
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
CURRENT, AMPERES
PEAK FORWARD SURGE
1 2 4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
TJ = 100 °C
1.0
0.1
MICROAMPERES
TJ = 25 °C
REVERSE CURRENT,
0.01
100 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
120
FORWARD VOLTAGE, VOLTS
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