DYNEX MP04TT600-16, MP04TT600-17, MP04TT600-18, MP04TT600-15 Datasheet

MP04TT600

Dual Thyristor Water Cooled Module

Preliminary Information

DS5466-1.1 June 2001

FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (Non Toxic) Isolation Medium

■ Integral Water Cooled Heatsink

APPLICATIONS

■ Motor Control

■ Controlled Rectifier Bridges

■ Heater Control

■ AC Phase Control

VOLTAGE RATINGS

Type Number Repetitive Peak

Voltages V

DRM VRRM

V

MP04TT600-18 MP04TT600-17 MP04TT600-16 MP04TT600-15

Lower voltage grades available

1800 1700 1600 1500

Conditions

T

= 0˚ to 125˚C,

vj

I

= I

= V = V

= 50mA

RRM

RSM

RRM

V V

DRM

DSM

DRM

respectively

= + 100V

KEY PARAMETERS V

DRM

I

T(AV)

I

TSM(per arm)

I

T(RMS)

V

isol

5 (G1)

6 (G2)

Module outline type code:

MP04-W3

4 (K1)

3 (A)

7 (K2)

Fig. 1 TT Circuit diagram

1800V 580A 14000A 912A 3000V

1 (AK)

2 (A)

Module outline type code:

MP04-W3A

ORDERING INFORMATION

Order As:

MP04TT600-XX-W2 1/4 - 18 NPT connection MP04TT600-XX-W3 1/4 - 18 NPT connection MP04TT600-XX-W3A 1/4 - 18 NPT water connection

thread

XX shown in the part number about represents V selection required, eg. MP04TT600-27-W2

Note: When ordering, please use the complete part number.

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DRM

/100

Module outline type code: MP04-W2

(See Package Details for further information)

Fig. 2 Module package variants - (not to scale)

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MP04TT600

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Symbol

I

T(AV)

I

T(RMS

I

TSM

I2t

I

TSM

I2t

V

isol

Mean on-state current

RMS value

Surge (non-repetitive) on-current

2

t for fusing

I

Surge (non-repetitive) on-current

2

t for fusing

I

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Test Conditions

Half wave resistive load, T

4.5 Ltr/min T

= 25˚C @ 4.5 Ltr/min

T

water (in)

= 40˚C @ 4.5 Ltr/min

T

water (in)

R

= 0

= 125˚C

j

= 125˚C

j

DRM

10ms half sine, T

V

10ms half sine, T

= 50% V

V

R

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

water (in)

= 25˚C

= 40˚C

Max.

650

580

1020

912

14

0.975x10

11.2

0.625x10

3000

6

Units

A

kA

2

s

A

kA

2

s

A

V

Symbol

R

th(j-w)

T

vj

T

stg

-

2/10

Parameter

Thermal resistance - junction to water

(per thyristor)

Virtual junction temperature

Storage temperature range

Screw torque

Weight (nominal)

Test Conditions

dc, 4.5 Ltr/min

Half wave, 4.5 Ltr/min

3 Phase, 4.5 Ltr/min

Reverse (blocking)

-

Mounting - M6

Electrical connections - M10

-

Min.

-

–40

6(53)

-

Max.

0.102

0.106

0.112

125

12(106)

Refer to

-

Units

˚C/kW

˚C

Nm (lb.ins)

g

drawings

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DYNAMIC CHARACTERISTICS

MP04TT600

Symbol

I

RRM/IDRM

dV/dt

dI/dt

V

T(TO)

r

T

Parameter

Peak reverse and off-state current

Linear rate of rise of off-state voltage

Rate of rise of on-state current

Threshold voltage

On-state slope resistance

Test Conditions

DRM

= 125˚C

, Tj = 125˚C

to 500A, gate source 10V, 5Ω

DRM

At V

RRM/VDRM

To 67% V

From 67% V

t

= 0.5µs, Tj = 125˚C

r

At T

vj

At T

vj

Min.

-

Max.

50

1000

500

0.85

0.38

Units

Note: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these

figures due to the impedance of the busbar from the terminal to the semiconductor.

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

V

GT

I

GT

Gate trigger voltage

Gate trigger current

Parameter

V

DRM

= 5V, T

Test Conditions

= 25oC

case

= 25oC

case

Max.

200

Units

3.5

mA

V/µs

A/µs

V

mΩ

V

mA

P

V

I

P

V

FGM

GD

FGM

FGN

RGM

GM

G(AV)

Gate non-trigger voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

At V

DRM Tcase

= 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

-

Anode positive with respect to cathode

See table fig. 5

-

0.25

30

0.25

5

10

150

10

V

A

W

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