DYNEX MP04TT500-28, MP04TT500-25, MP04TT500-26, MP04TT500-27 Datasheet

MP04TT500

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FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (Non Toxic) Isolation Medium

■ Integral Water Cooled Heatsink

APPLICATIONS

■ Motor Control

■ Controlled Rectifier Bridges

■ Heater Control

■ AC Phase Control

VOLTAGE RATINGS

ORDERING INFORMATION

Order As:

MP04TT500-XX-W2 1/4 - 18 NPT connection MP04TT500-XX-W3 1/4 - 18 NPT connection MP04TT500-XX-W3A 1/4 - 18 NPT water connection

thread

XX shown in the part number about represents V

DRM

/100

selection required, eg. MP04TT500-27-W2 Note: When ordering, please use the complete part number.

KEY PARAMETERS V

DRM

2800V

I

T(AV)(per arm)

480A

I

TSM(per arm)

11200A

I

T(RMS)(per arm)

753A

V

isol

3000V

MP04TT500

Dual Thyristor Water Cooled Module

Advance Information

DS5446-1.2 May 2001

Fig. 1 TT Circuit diagram

Fig. 2 Module package variants - (not to scale)

Module outline type code: MP04-W2

(See Package Details for further information)

2800 2700 2600 2500

MP04TT500-28 MP04TT500-27 MP04TT500-26 MP04TT500-25

Conditions

T

vj

= 0˚ to 125˚C,

I

DRM

= I

RRM

= 50mA

V

DSM

= V

RSM

=

V

DRM

= V

RRM

+ 100V

respectively

Lower voltage grades available

Type Number Repetitive Peak

Voltages V

DRM VRRM

V

5 (G1)

6 (G2)

4 (K1)

7 (K2)

3 (A)

2 (A)

1 (AK)

Module outline type code:

MP04-W3

Module outline type code:

MP04-W3A

MP04TT500

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Parameter

Mean on-state current

RMS value

Surge (non-repetitive) on-current

I

2

t for fusing

Surge (non-repetitive) on-current

I

2

t for fusing

Isolation voltage

Test Conditions

Half wave resistive load, T

water (in)

= 25˚C

4.5 Ltr/min T

water (in)

= 40˚C

T

water (in)

= 25˚C @ 4.5 Ltr/min

T

water (in)

= 40˚C @ 4.5 Ltr/min

10ms half sine, T

j

= 125˚C

V

R

= 0

10ms half sine, T

j

= 125˚C

V

R

= 50% V

DRM

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Symbol

I

T(AV)

I

T(RMS

I

TSM

I2t

I

TSM

I2t

V

isol

Units

A

kA

A

2

s

kA

A

2

s

V

Max.

540

480

845

753

11.25

633 x 10

3

9

506 x 10

3

3000

Test Conditions

dc, 4.5 Ltr/min

Half wave, 4.5 Ltr/min

3 Phase, 4.5 Ltr/min

Reverse (blocking)

-

Mounting - M6

Electrical connections - M10

Parameter

Thermal resistance - junction to water

(per thyristor)

Virtual junction temperature

Storage temperature range

Screw torque

THERMAL AND MECHANICAL RATINGS

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Symbol

R

th(j-w)

T

vj

T

stg

-

Units

˚C/kW

˚C

Nm (lb.ins)

Max.

0.102

0.106

0.112

125

-

12 (106)

Min.

-

–40

6 (53)

-

MP04TT500

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Units

mA

V/µs

A/µs

V

mΩ

Test Conditions

t V

RRM/VDRM

, Tj = 125˚C

To 67% V

DRM

, Tj = 125˚C

From 67% V

DRM

to 500A, gate source 10V, 5Ω

t

r

= 0.5µs, Tj = 125˚C

At T

vj

= 125˚C

At T

vj

= 125˚C

Parameter

Peak reverse and off-state current

Linear rate of rise of off-state voltage

Rate of rise of on-state current

Threshold voltage. (See note 1)

On-state slope resistance. (See note 1)

DYNAMIC CHARACTERISTICS

Symbol

I

RRM/IDRM

dV/dt

dI/dt

V

T(TO)

r

T

Max.

50

1000

500

0.91

0.65

Min.

-

Parameter

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Test Conditions

V

DRM

= 5V, T

case

= 25oC

V

DRM

= 5V, T

case

= 25oC

At V

DRM Tcase

= 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

-

Anode positive with respect to cathode

See table fig. 5

-

Symbol

V

GT

I

GT

V

GD

V

FGM

V

FGN

V

RGM

I

FGM

P

GM

P

G(AV)

GATE TRIGGER CHARACTERISTICS AND RATINGS

Max.

3.5

200

0.25

30

0.25

5

10

150

10

Units

V

mA

V

A

W

Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these

figures due to the impedance of the busbar from the terminal to the semiconductor.