DYNEX MP03-190-08, MP03-190-10, MP03-190-12 Datasheet

MP03 XXX 190 Series

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Code

Circuit

HBT

HBP

HBN

Repetitive

Peak
Voltages
V

DRM VRRM

Type

Number

Conditions

1200

1000

800

MP03/190 - 12
MP03/190 - 10
MP03/190 - 08

T

(vj)

= 125oC

I

DRM

= I

RRM

= 30mA

V

DSM

& V

RSM

=

V

DRM

& V

RRM

+ 100V

respectively

Lower voltage grades available. For full description of part
number see "Ordering Instructions" on page 3.

Symbol

Parameter

Max.

Units

158

A

Conditions

160

A

T

case

= 75oC

T

heatsink

= 75oC

T

heatsink

= 85oC

T

case

= 85oC

T

case

= 75oC

I

T(RMS)

RMS value

A

133

A300

Mean on-state current Halfwave, resistive load

I

T(AV)

190

A

Module outline type code: MP03.

See Package Details for further information

VOLTAGE RATINGS

CURRENT RATINGS - PER ARM

PACKAGE OUTLINE

KEY PARAMETERS

V

DRM

1200V

I

TSM

5500A

I

T(AV)

(per arm) 190A

V

isol

2500V

FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (non-toxic) Isolation Medium

APPLICATIONS

■ Motor Control

■ Controlled Rectifier Bridges

■ Heater Control

■ AC Phase Control

CIRCUIT OPTIONS

MP03 XXX 190 Series

Phase Control Dual SCR, SCR/Diode Modules

Replaces December 1998 version, DS5099-3.0 DS5099-4.0 January 2000

MP03 XXX 190 Series

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Symbol

Parameter

Conditions Max.

Units

A

VR = 0
VR = 50% V

RRM

VR = 0
VR = 50% V

RRM

A2s

I2t

10ms half sine;
Tj = 125oC

10ms half sine;
Tj = 125oC

Surge (non-repetitive) on-state current

I

TSM

I2t for fusing

Symbol

Parameter

Conditions

Linear rate of rise of off-state voltage

V

Units

Max.

mA

V/µs

On-state voltage

30

V

TM

I

RRM/IDRM

Peak reverse and off-state current

To 60% V

DRM Tj

= 125oC

At V

RRM/VDRM

, Tj = 125oC

At 500A, T

case

= 25oC - See Note 1

Symbol

Parameter

Conditions

o

C/W

Units

o

C/W

o

C/W

Thermal resistance - case to heatsink
per Thyristor or Diode

R

th(c-hs)

R

th(j-c)

Virtual junction temperature

T

vj

o

C

o

C

T

sto

Storage temperature range

Mounting torque = 5Nm
with mounting compound

3 phase

halfwave

dc

Commoned terminals to base plate
AC RMS, 1min, 50Hz

Max.

125

Rate of rise of on-state current

V

T(TO)

Threshold voltage V

mΩ0.70

At Tvj = 125oC - See Note 1
At Tvj = 125oC - See Note 1

r

T

On-state slope resistance

-40 to 125

* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.

dV/dt

o

C/W

0.05

Isolation voltage

V

isol

2.5

Thermal resistance - junction to case
per Thyristor or Diode

5500
4200

151000

88200

A

A2s

0.21

0.22

0.23

kV

1.30

200*

A/µs

100

0.88

dI/dt

From 67% V

DRM

to 400A Repetitive 50Hz
Gate source 20V, 20Ω
Rise time 0.5µs, Tj =125oC

SURGE RATINGS - PER ARM

THERMAL & MECHANICAL RATINGS

DYNAMIC CHARACTERISTICS

MP03 XXX 190 Series

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Symbol

Parameter

Conditions

Gate non-trigger voltage

V

Units

Max.

3.0

0.20

Typ.

mA

VV

GD

Gate trigger voltage

200

V

GT

I

GT

Gate trigger current

VD = V

DRM

, Tj = 125˚C

V

DRM

= 6V, T

case

= 25oC, RL = 6Ω

V

DRM

= 6V, T

case

= 25oC, RL = 6Ω

-

-

-

V

RGM

Peak reverse gate voltage

V5.0­A

-4

I

FGM

Peak forward gate current

Anode positive with respect to cathode

P

GM

P

G(AV)

Peak gate power
Mean gate power

-

-

16

3

W
W

Examples:
MP03 HBP190 - 08

MP03 HBN190 - 12
MP03 HBT190 - 10

Adequate heatsinking is required to maintain the base temperature
at 75oC if full rated current is to be achieved. Power dissipation
may be calculated by use of V

T(TO)

and rT information in accordance
with standard formulae. We can provide assistance with
calculations or choice of heatsink if required.

The heatsink surface must be smooth and flat; a surface finish of
N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.

Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build up
and foreign material. Care should be taken to ensure no foreign
particles remain.

An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces. This
should ideally be 0.05mm (0.002") per surface to ensure optimum
thermal performance.

After application of thermal compound, place the module squarely
over the mounting holes, (or 'T' slots) in the heatsink. Using a
torque wrench, slowly tighten the recommended fixing bolts at
each end, rotating each in turn no more than 1/4 of a revolution at
a time. Continue until the required torque of 5Nm (44lb.ins) is
reached at both ends.

It is not acceptable to fully tighten one fixing bolt before starting to
tighten the others. Such action may DAMAGE the module.

GATE TRIGGER CHARACTERISTICS AND RATINGS

ORDERING INSTRUCTIONS

Part number is made up of as follows:
MP03 HBT 190 - 12

MP = Pressure contact module
03 = Outline type
HBT = Circuit configuration code (see "circuit options" - front page)
190 = Nominal average current rating at T

case

= 75oC

12 = V

RRM

/100

Note: Diode ratings and characteristics are comparable with SCR in types HBP or HBN.

Types HBP or HBN can also be supplied with diode polarity reversed, to special order.

MOUNTING RECOMMENDATIONS