DYNEX MP03-175-16, MP03-175-10, MP03-175-12, MP03-175-14 Datasheet

MP03XXX 175 Series

MP03 XXX 175 Series

Phase Control Dual SCR, SCR/Diode Modules

Replaces December 1998 version, DS5098-3.0 DS5098-4.0 January 2000

FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (non-toxic) Isolation Medium

APPLICATIONS

■ Motor Control

■ Controlled Rectifier Bridges

■ Heater Control

■ AC Phase Control

VOLTAGE RATINGS

Type

Number

Repetitive

Peak
Voltages
V

DRM VRRM

MP03/175-16
MP03/175-14
MP03/175-12
MP03/175-10

Lower voltage grades available. 1800V product also available ­consult factory. For full description of part number see
"Ordering instructions" on page 3.

1600

1400

1200

1000

Conditions

T

= 125oC

(Vj)

I

= I
V
V

DRM

DSM

DRM

RRM

& V

& V

= 30mA

RSM

RRM

respectively

=

+ 100V

CURRENT RATINGS - PER ARM

KEY PARAMETERS

V

DRM

I

TSM

I

(per arm) 175A

T(AV)

V

isol

1600V
6800A

2500V

CIRCUIT OPTIONS

Code

HBT

HBP

HBN

Circuit

PACKAGE OUTLINE

Module outline type code: MP03.

See Package Details for furtyher information.

Symbol

I

T(AV)

I

T(RMS)

Parameter

Mean on-state current

RMS value

Conditions

Halfwave, resistive load

T

= 75oC

case

T

case

T

case

T

heatsink

T

heatsink

= 75oC
= 85oC

= 75oC
= 85oC

Max.

175
146
148
123

Units

A
A
A
A

A275

1/10

MP03 XXX 175 Series

SURGE RATINGS - PER ARM

Symbol

I

TSM

I2t

Surge (non-repetitive) on-state current

I2t for fusing

Parameter

THERMAL & MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(c-hs)

T

vj

T

sto

Thermal resistance - junction to case
per Thyristor or Diode

Thermal resistance - case to heatsink
per Thyristor or Diode

Virtual junction temperature

Storage temperature range

Parameter

Conditions Max.

10ms half sine;
Tj = 125oC

10ms half sine;
Tj = 125oC

Conditions

dc
halfwave

3 phase
Mounting torque = 5Nm

with mounting compound

VR = 0
VR = 50% V
VR = 0

VR = 50% V

RRM

RRM

6800

5500
231000
150000

Max.

0.21

0.22

0.23

0.05

125

-40 to 125

Units

A

A
A2s
A2s

Units

o

C/W

o

C/W

o

C/W

o

C/W

o

C

o

C

isol

Isolation voltageV

Commoned terminals to base plate
AC RMS, 1min, 50Hz

2.5

DYNAMIC CHARACTERISTICS - THYRISTOR

Symbol

TM

I

RRM/IDRM

dV/dt

dI/dt

V

T(TO)

r

T

* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.

On-state voltageV
Peak reverse and off-state current
Linear rate of rise of off-state voltage 200*

Rate of rise of on-state current

Threshold voltage
On-state slope resistance

Parameter

Conditions

At 500A, T
At V

RRM/VDRM

To 67% V

From 67% V

= 25oC - See Note 1

case

, Tj = 125oC

= 125oC

DRM Tj

to 500A Repetitive 50Hz

DRM

Gate source 10V, 5Ω
Rise time 0.5µs, Tj =125oC

At Tvj = 125oC - See Note 1
At Tvj = 125oC - See Note 1

UnitsMax.

1.3 V
30

V/µs

100 A/µs

0.75

kV

mA

V0.98

mΩ

2/10

GATE TRIGGER CHARACTERISTICS AND RATINGS

MP03XXX 175 Series

Symbol

V

GT

I

GT

V

GD

V

FGM

V

FGN

V

RGM

I

FGM

P

GM

P

G(AV)

Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage V5.0­Peak forward gate current
Peak gate power
Mean gate power

Parameter

V

= 5V, T

DRM

V

= 5V, T

DRM

V

= 5V, T

DRM

Anode positive with respect to cathode
Anode negative with respect to cathode

Anode positive with respect to cathode
tp = 25µs-

ORDERING INSTRUCTIONS

Part number is made up as follows:
MP03 HBT 175 - 12

MP = Pressure contact module
03 = Outline type
HBT = Circuit configuration code (see "circuit options" - front page)
175 = Nominal average current rating at T
12 = V

RRM

/100

= 75oC

case

Conditions

= 25oC

case

= 25oC

case

= 25oC

case

Examples:
MP03 HBP175-12

MP03 HBN175-16
MP03 HBT175-10

Typ.

Max.

-

-

150

-

0.25

-

-

0.25

-

3.0

30

10

100

5

Units

V

mA

V
V

V

A­W
W

NOTE: Diode ratings and characteristics are comparable with the SCR in types HBP or HBN.

Types HBP and HBN can also be supplied with diode polarity reversed, to special order.

MOUNTING RECOMMENDATIONS

Adequate heatsinking is required to maintain the base temperature
at 75oC if full rated current is to be achieved. Power dissipation
may be calculated by use of V
with standard formulae. We can provide assistance with
calculations or choice of heatsink if required.

The heatsink surface must be smooth and flat; a surface finish of
N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.

Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build up
and foreign material. Care should be taken to ensure no foreign
particles remain.

and rT information in accordance

T(TO)

An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces. This
should ideally be 0.05mm (0.002") per surface to ensure optimum
thermal performance.

After application of thermal compound, place the module squarely
over the mounting holes, (or 'T' slots) in the heatsink. Using a
torque wrench, slowly tighten the recommended fixing bolts at
each end, rotating each in turn no more than 1/4 of a revolution at
a time. Continue until the required torque of 5Nm (44lb.ins) is
reached at both ends.

It is not acceptable to fully tighten one fixing bolt before starting to
tighten the others. Such action may DAMAGE the module.

3/10