DYNEX MP03-130-16, MP03-130-18, MP03-130-20 Datasheet

MP03 XXX 130 Series

Phase Control Dual SCR, SCR/Diode Modules

Replaces December 1998 version, DS4480-3.0 DS4480-4.0 January 2000

FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (non-toxic) Isolation Medium

APPLICATIONS

■ Motor Control

■ Controlled Rectifier Bridges

■ Heater Control

■ AC Phase Control

VOLTAGE RATINGS

Type

Number

MP03/130-20 MP03/130-18 MP03/130-16

Repetitive

Peak Voltages V

DRM VRRM

2000

1800

1600

Conditions

Tvj = 125oC I

= I

DRM

RRM

& V

DSM

& V

DRM

respectively

= 30mA

RSM

+ 100V

RRM

Code

HBT

HBP

HBN

KEY PARAMETERS

DRM

TSM

(per arm) 134A

T(AV)

isol

CIRCUIT OPTIONS

Circuit

PACKAGE OUTLINE

2000V 4000A

2500V

Lower voltage grades available. For full description of part number see "Ordering Instructions" on page 3.

CURRENT RATINGS - PER ARM

Symbol

T(AV)

T(RMS)

Mean on-state current

RMS value

Parameter

Module type code: MP03.

See Package Details for futher information.

Conditions

Halfwave, resistive load

= 75oC

case

heatsink

= 75oC = 85oC

Max.

134 112 114

210

Units

A A A A

1/10

MP03 XXX 130 Series

SURGE RATINGS - PER ARM

Symbol

TSM

I2t

Surge (non-repetitive) on-state current

I2t for fusing

Parameter

THERMAL & MECHANICAL RATINGS

Symbol

th(j-c)

th(c-hs)

sto

Thermal resistance - junction to case per Thyristor or Diode

Thermal resistance - case to heatsink per Thyristor or Diode

Virtual junction temperatureT

Storage temperature range

Parameter

Conditions Max.

10ms half sine; Tj = 125oC

VR = 0 VR = 50% V VR = 0

VR = 50% V

Conditions

dc halfwave 3 phase

Mounting torque = 5Nm with mounting compound

RRM

4000 A 3200

80000 51200

Max.

0.21

0.22

0.23

0.05

125

-40 to 125

Units

A2s

Units

C/W

isol

Isolation voltageV

Commoned terminals to base plate AC RMS, 1min, 50Hz

2.5

DYNAMIC CHARACTERISTICS

Symbol

RRM/IDRM

dV/dt

dI/dt

T(TO)

* Higher dV/dt values available, contact factory for particular requirements. Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor.

On-state voltageV Peak reverse and off-state current Linear rate of rise of off-state voltage

Rate of rise of on-state current

Threshold voltage On-state slope resistance

Parameter

At 450A, T At V

RRM/VDRM

To 60% V

From 67% V

= 25oC - See Note 1

case

, Tj = 125oC

= 125oC

DRM Tj

to 400A Repetitive 50Hz

DRM

Gate source 20V, 20Ω Rise time 0.5µs, Tj =125oC

At Tvj = 125oC - See Note 1 At Tvj = 125oC - See Note 1

Max.Conditions

1.90 30

200*

100

1.25

1.33

Units

V/µs

A/µs

mΩ

2/10

GATE TRIGGER CHARACTERISTICS AND RATINGS

MP03 XXX 130 Series

Symbol

FGM

FGN

RGM

FGM

G(AV)

Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage V5.0Peak forward gate current Peak gate power Mean gate power

Parameter

= 5V, T

DRM

= 5V, T

DRM

= 5V, T

DRM

Anode positive with respect to cathode Anode negative with respect to cathode

Anode positive with respect to cathode

ORDERING INSTRUCTIONS

Part number is made up as follows: MP03 HBT 130 - 18

MP = Pressure contact module 03 = Outline type HBT = Circuit configuration code (see "circuit options" - front page) 130 = Nominal average current rating at T 18 = V

RRM

/100

= 75oC

case

Conditions

= 25oC

case

= 25oC

case

= 25oC

case

Examples: MP03 HBP130-16

MP03 HBN130-20 MP03 HBT130-16

Typ.

Max.

3.0

200

0.2 30

0.25

Units

V V

AW W

Note: Diode ratings and characteristics are comparable with SCR in types HBP or HBN.

Types HBP or HBN can also be supplied with diode polarity reversed, to special order.

MOUNTING RECOMMENDATIONS

Adequate heatsinking is required to maintain the base temperature at 75oC if full rated current is to be achieved. Power dissipation may be calculated by use of V information in accordance with standard formulae. We can provide assistance with calculations or choice of heatsink if required.

The heatsink surface must be smooth and flat; a surface finish of N6 (32µin) and a flatness within 0.05mm (0.002") are recommended.

Immediately prior to mounting, the heatsink surface should be lightly scrubbed with fine emery, Scotch Brite or a mild chemical etchant and then cleaned with a solvent to remove oxide build up and foreign material. Care should be taken to ensure no foreign particles remain.

T(TO)

and r

An even coating of thermal compound (eg. Unial) should be applied to both the heatsink and module mounting surfaces. This should ideally be 0.05mm (0.002") per surface to ensure optimum thermal performance.

After application of thermal compound, place the module squarely over the mounting holes, (or 'T' slots) in the heatsink. Using a torque wrench, slowly tighten the recommended fixing bolts at each end, rotating each in turn no more than 1/4 of a revolution at a time. Continue until the required torque of 5Nm (44lb.ins) is reached at both ends.

It is not acceptable to fully tighten one fixing bolt before starting to tighten the others. Such action may DAMAGE the module.

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