DYNEX MP02TT200-14, MP02TT200-15, MP02TT200-16, MP02TT200-13, MP02TT200-12 Datasheet

MP02TT200

G1K1K2G

2

1

23

MP02TT200

Dual Thyristor Water Cooled Module

Preliminary Information

DS5434-1.1 April 2001

FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (Non Toxic) Isolation Medium

■ Integral Water Cooled Heatsink

APPLICATIONS

■ Motor Control

■ Controlled Rectifier Bridges

■ Heater Control

■ AC Phase Control

VOLTAGE RATINGS

Type Number Repetitive Peak

Voltages V

DRM VRRM

V

MP02TT200-16 MP02TT200-15 MP02TT200-14 MP02TT200-13 MP02TT200-12

Lower voltage grades available

1600 1500 1400 1300 1200

Conditions

T

= 0˚ to 125˚C,

vj

I

= I

= V = V

= 30mA

RRM

RSM

RRM

V V

DRM

DSM

DRM

respectively

= + 100V

KEY PARAMETERS V

DRM

I

T(AV)

I

TSM(per arm)

I

T(RMS)

V

isol

Fig. 1 Circuit diagram

1

1600V

200A

6800A

318A

3000V

23

K2

G2

K1 G1

ORDERING INFORMATION

Outline type code: MP02 W12/W13

Order As:

MP02TT200-XX-W12 1/4 - 18 NPT connection MP02TT200-XX-W13 1/4 BSP connection

XX shown in the part number about represents V selection required, e.g. MP02TT200-14-W12

DRM

/100

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Note: When ordering, please use the whole part number. Auxiliary gate and cathode leads can be ordered separately.

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MP02TT200

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Symbol

I

T(AV)

I

T(RMS

I

TSM

I2t

I

TSM

I2t

V

isol

Mean on-state current

RMS value

Surge (non-repetitive) on-current

2

t for fusing

I

Surge (non-repetitive) on-current

2

t for fusing

I

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Test Conditions

Half wave resistive load, T

4.5 Ltr/min T

= 25˚C @ 4.5 Ltr/min

T

water (in)

= 40˚C @ 4.5 Ltr/min

T

water (in)

R

= 0

= 125˚C

j

= 125˚C

j

DRM

10ms half sine, T

V

10ms half sine, T

= 50% V

V

R

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

water (in)

T

water (in)

= 25˚C

= 40˚C

= 50˚C

Max.

230

200

180

360

318

6.8

0.231 x 10

5.5

0.15 x 10

3000

6

Units

A

kA

2

s

A

kA

2

s

A

V

Symbol

R

th(j-w)

T

vj

T

stg

-

2/9

Parameter

Thermal resistance - junction to water

(per thyristor)

Virtual junction temperature

Storage temperature range

Screw torque

Weight (nominal)

Test Conditions

dc, 4.5 Ltr/min

Half wave, 4.5 Ltr/min

3 Phase, 4.5 Ltr/min

Reverse (blocking)

-

Mounting - M6

Electrical connections - M6

-

Min.

-

–40

5 (44)

-

Max.

0.3

0.32

0.33

125

5 (44)

1200

-

Units

˚C/kW

˚C

Nm (lb.ins)

g

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DYNAMIC CHARACTERISTICS

MP02TT200

Symbol

I

RRM/IDRM

dV/dt

dI/dt

V

T(TO)

r

T

Parameter

Peak reverse and off-state current

Linear rate of rise of off-state voltage

Rate of rise of on-state current

Threshold voltage

On-state slope resistance

Test Conditions

DRM

= 125˚C

, Tj = 125˚C

to 200A, gate source 10V, 5Ω

DRM

At V

RRM/VDRM

To 67% V

From 67% V

t

= 0.5µs, Tj = 125˚C

r

At T

vj

At T

vj

Min.

-

Max.

30

1000

500

0.98

0.75

Units

Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these

figures due to the impedance of the busbar from the terminal to the semiconductor.

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

V

GT

I

GT

Gate trigger voltage

Gate trigger current

Parameter

V

DRM

= 5V, T

Test Conditions

= 25oC

case

= 25oC

case

Max.

150

Units

3

mA

V/µs

A/µs

V

mΩ

V

mA

P

V

I

FGM

P

G(AV)

GD

FGM

FGN

RGM

GM

Gate non-trigger voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

At V

DRM Tcase

= 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

-

Anode positive with respect to cathode

See table fig. 5

-

0.25

30

0.25

5

10

100

5

V

A

W

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