DYNEX MA5114 User Manual

查询MA5114供应商

MA5114

MA5114

Radiation hard 1024x4 Bit Static RAM

Replaces June 1999 version, DS3591-4.0 DS3591-5.0 January 2000

The MA5114 4k Static RAM is configured as 1024 x 4 bits and
manufactured using CMOS-SOS high performance, radiation hard,
3µm technology.

The design uses a 6 transistor cell and has full static operation with
no clock or timing strobe required. Address input buffers are deselected
when Chip Select is in the HIGH state.

Operation Mode CS WE I/O Power

Read L H D OUT ISB1
Write L L D IN

Standby H X High Z ISB2

Figure 1: Truth Table

FEATURES

■ 3µm CMOS-SOS Technology

■ Latch-up Free

■ Fast Access Time 90ns Typical

■ Total Dose 10

■ Transient Upset >10

■ SEU <10

■ Single 5V Supply

■ Three State Output

■ Low Standby Current 50µA Typical

■ -55°C to +125°C Operation

■ All Inputs and Outputs Fully TTL or CMOS

Compatible

■ Fully Static Operation

■ Data Retention at 2V Supply

6

Rad(Si)

-10

Errors/bitday

10

Rad(Si)/sec

Figure 2: Block Diagram

1/12

MA5114

CHARACTERISTICS AND RATINGS

Symbol Parameter Min. Max. Units

V

CC

V

T

A

T

S

Supply Voltage -0.5 7 V
Input Voltage -0.3 VDD+0.3 V

I

Operating Temperature -55 125 °C
Storage Temperature -65 150 °C

Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functlonal operation of the device at these condltions,
or at any other condition above those indicated in the
operations section of this specification, is not Implied
Exposure to absolute maxlmum rating conditions for
extended perlods may affect device reliability.

Figure 3: Absolute Maximum Ratings

Notes for Tables 4 and 5:

1. Characteristics apply to pre radiation at T

= -55°C to +125°C with VDD = 5V ±10% and to post 100k Rad(Si) total dose

A

radiation at TA = 25°C with VDD = 5V ±10% (characteristics at higher radiation levels available on request).

2. Worst case at TA = +125°C, guaranteed but not tested at TA = -55°C.
GROUP A SUBGROUPS 1, 2, 3.

Symbol Parameter Conditions Min. Typ. Max. Units

V

V

V
V
V

I

I

LO

I

PUI

I

PDI

I

DD

I

SB1

I

SB2

Supply voltage - 4.5 5.0 5.5 V

DD

Input High Voltage - VDD/2 - V

lH

Input Low Voltage - V

lL

Output High Voltage I

OH

Output Low Voltage IOL = 2mA - - 0.4 V

OL

Input Leakage Current (note 2) All inputs except CS --±10 µA

LI

Output Leakage Current (note 2) Output disabled, V

= -1mA 2.4 - - V

OH1

= VSS or V

OUT

DD

SS

--±20 µA

- 0.8 V

Input Pull-Up Current VIN = VSS on CS input only - - -100 µA
Input Leakage Current VIN = VSS on CS input only - - 5 µA
Power Supply Current fRC = 1MHz, CS = 50% mark:space- 12 16 mA
Selected Supply Current CS = V

SS

-2535mA

Standby Supply Current Chip disabled - 50 3000 µA

DD

V

Figure 4: Electrical Characteristics

Symbol Parameter Conditions Min. Typ. Max. Units

V

I

DR

DDR

VCC for Data Retention CS = V

DR

2.0 - - V

Data Retention Current CS = VDR, VDR = 2.0V - 30 2000 µA

Figure 5: Data Retention Characteristics

2/12

AC CHARACTERISTICS

Conditions of Test for Tables 5 and 6:

1. Input pulse = VSS to 3.0V.

2. Times measurement reference level = 1.5V.

3. Transition is measured at ±500mV from steady state.

4. This parameter is sampled and not 100% tested.
Notes for Tables 6 and 7:

Characteristics apply to pre-radiation at TA = -55°C to +125°C with V
at TA = 25°C with VDD = 5V ±10%. GROUP A SUBGROUPS 9, 10, 11.

Symbol Parameter Min Max Units

MA5114

= 5V±10% and to post 100k Rad(Si) total dose radiation

DD

T

AVAVR

T

AVQV

T

ELQV

T

(3,4) Chip Select to Output Active 10 - ns

ELQX

T

(3,4) Chip Select to Output Tri State 10 50 ns

ELQZ

T

AXQX

Read Cycle Time 135 - ns
Address Access Time - 135 ns
Chip Select to Output Valid - 135 ns

Output Hold from Address Change 10 - ns

Figure 6: Read Cycle AC Electrical Characteristics

Symbol Parameter Min Max Units

T

AVAVW

T

AVWL

T

WLWH

T

WHAV

T

DVWH

T

NHDX

T

(3,4) Write Enable to Output Tri State 10 50 ns

WLQZ

T

ELWL

T

ELWH

T

AVWH

T

(3,4) Output Active from End to Write 5 - ns

WHQX

Write Cycle Tlme 135 - ns
Address Set Up Time 10 - ns
Write Pulse Width 50 - ns
Write Recovery Time 5 - ns
Data Set Up Time 35 - ns
Data Hold Time 5 - ns

Chip Selection to Write Low 25 - ns
Chip Selection to End of Write 85 - ns
Address Valid to End of Write 80 - ns

Figure 7: Write Cycle AC Electrical Characteristics

Symbol Parameter Conditions Min. Typ. Max. Units

C

Note: T

C

IN

OUT

= 25°C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured.

A

Input Capacitance Vl = 0V - 6 10 pF
Output Capacitance VO = 0V - 8 12 pF

Figure 8: Capacitance

3/12

MA5114

Symbol Parameter Conditions

F

T

Basic Functionality VDD = 4.5V - 5.5V, FREQ = 1MHz

V

= VSS, VIH = VDD, VOL ≤ 1.5V, VOH ≥ 1.5V

IL

TEMP = -55°C to +125°C, GPS PATTERN SET
GROUP A SUBGROUPS 7, 8A, 8B

Figure 9: Functionality

Subgroup Definition

1 Static characteristics specified in Tables 4 and 5 at +25°C
2 Static characteristics specified in Tables 4 and 5 at +125°C
3 Static characteristics specified in Tables 4 and 5 at -55°C

7 Functional characteristics specified in Table 9 at +25°C
8A Functional characteristics specified in Table 9 at +125°C
8B Functional characteristics specified in Table 9 at -55°C

9 Switching characteristics specified in Tables 6 and 7 at +25°C
10 Switching characteristics specified in Tables 6 and 7 at +125°C
11 Switching characteristics specified in Tables 6 and 7 at -55°C

Figure 10: Definition of Subgroups

4/12