DYNEX GDU91-20222 Datasheet
GDU 91 20222
GDU 91-20222
Gate Drive Unit
Replaces March 1998 version, DS4570-3.1 DS4570-4.0 January 2000
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
APPLICATIONS KEY PARAMETERS
■ Used with Gate Turn-Off Thyristors in high current switching
applications
I
I
dIGQ/dt 30A/µs
CONDITIONS - (UNLESS STATED OTHERWISE)
V1 = +5V V2 = +15V V3 = -15V
Test circuit GTO
GDU connection to GTO
Test circuit emitter and gate drive emitter
Test circuit emitter current
DG408BP
500mm CO - AX cable type RC5327230
Honeywell sweetspot HFE 4020 - 013
30mA
Test circuit receiver and gate drive receiver Honeywell sweetspot HFD 3029 - 002
ELECTRICAL CHARACTERISTICS
Parameter
I
V1
+5V PSU current
500Hz, 50% duty cycle
FGM
G(ON)
-
30A
4A
UnitsMax.Typ.Min.ConditionsSymbol
2.2 A
-
I
V2
I
V3
V
1(Min)
V
2(Min)
V
3(Min)
I
FGM
I
G(ON)
dI
/dt
FG
dIGQ/dt
+15V PSU current
-15V PSU current
+5V PSU minimum
+15V PSU minimum
-15V PSU minimum
Peak forward gate current
On-state gate current
Rate of rise of positive gate current
Rate of rise of negative gate current
500Hz
500Hz, I
GTO Tj = 125˚C
= 1000A
T
-
-
-
-
-
Measured 10 - 75% I
IT = 1000A, 90% I
G(ON)
FGM
- 50% I
GQM
-
-
3.8
14.0
14.0
30
--
-30-
-
0.55 A
-
3.0 A
-
--
--
--
--
4
30
-
V
V
V
A
A
A/µs
A/µs
1/4
GDU 91 20222
TIMING CHARACTERISTICS
No response pulse width of
†
t
*
t3*
1
t5*
t
2
t
4
input signal
Delay time emitter
current to receiver o/p
Turn-on delay emitter
†
current to 10% I
I
pulse width
FGM
Minimum on time
10% I
to 90% I
FGM
FGM
G(ON)
Adjustable by R81 + R82
-
-
-
Adjustable by R37
UnitsMax.Typ.Min.ConditionsSymbol Parameter
23µs
0.4
5.2
-
80
25
-
-
-
-
0.8 µs
6.2 µs
-
µs
110 µs
t8*
t
t
t
t
6
t
7
t
9
10
11
12
Receiver storage time
Turn-off delay.
Emitter current to 90% I
G(ON)
Minimum off time
90% I
G(ON)
to 10% I
FGM
Delay time
Gate volts to o/p emitter current
Turn-off delay
Gate volts to test receiver o/p
Storage time
Gate volts to o/p emitter current
Turn-on delay
Gate volts to test receiver o/p
-
-
Adjustable by R38 80
-
-
Measured at low I
Measured at low I
* t1,t3,t5,t8 are factory settings. † Adjustment of t1 alters t3. 1. Varies with I
t
FGM
I
1
dIFG/dt
0V
t
2
10µs
10%
t
3
Min. ON time
-8V
t
6
t
4
t
5
dI
GQ
t
9
Q
/dt
Test circuit
emitter current
Control card
receiver output
Gate current
Gate voltage
Gate Drive Unit Waveforms
Control card emitter current
0.5
1.5
-
- 0.7 -
GQM
I
- 0.1
- 0.8
GQM
GQM
due to gate lead impedance.
GQM
t
7
90% I
G(ON)
GQT
t
8
Min. OFF
-8V
t
11
-
-
0.1
-
1
1
0.9 µs
2.3 µs
110 µs
-
µs
µs
-
-
µs
µs
2/4
Test circuit receiver output
t
10
t
12
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