DYNEX GDU90-20421 Datasheet
GDU 90-20421
GDU 90-20421
Gate Drive Unit
Replaces March 1998 version, DS4565-2.1 DS4565-3.0 January 2000
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
APPLICATIONS
■ Used with Gate Turn-Off Thyristors in high current
switching applications
I
FGM
I
G(ON)
dIGQ/dt 40A/µs
CONDITIONS - (UNLESS STATED OTHERWISE)
V1 = +5V V2 = +15V V3 = -15V
Test circuit GTO
GDU connection to GTO
Test circuit emitter and gate drive emitter
Test circuit emitter current
DG646BH
500mm CO - AX cable type RC5327230
Hewlett Packard versatile link HFBR1524
30mA
Test circuit receiver and gate drive receiver Hewlett Packard versatile link HFBR2524
ELECTRICAL CHARACTERISTICS
KEY PARAMETERS
30A
7A
I
V1
I
V2
I
V3
V
1(Min)
V
2(Min)
V
3(Min)
I
FGM
I
G(ON)
dI
/dt
FG
dIGQ/dt
Parameter
+5V PSU current
+15V PSU current
-15V PSU current
+5V PSU minimum
+15V PSU minimum
-15V PSU minimum
Peak forward gate current
On-state gate current
Rate of rise of positive gate current
Rate of rise of negative gate current
700Hz, 50% duty cycle
700Hz
700Hz, I
GTO Tj = 125˚C
= 2000A
T
-
-
-
-
-
Measured 10 - 75% I
IT = 2000A, 90% I
G(ON)
FGM
- 50% I
GQM
UnitsMax.Typ.Min.ConditionsSymbol
-
-
-
3.8
14.0
14.0
30
--
-30-
-
40
3.80 A
-
0.73 A
-
9.20 A
-
--
--
--
--
7
-
V
V
V
A
A
A/µs
A/µs
1/4
GDU 90-20421
TIMING CHARACTERISTICS
t1*
t3*
t8*
t
t
t
t
t5*
t
Parameter
No response pulse width of
†
input signal
t
2
4
Delay time emitter
current to receiver o/p
Turn-on delay emitter
†
current to 10% I
I
pulse width
FGM
FGM
Minimum on time
10% I
t
6
t
7
Receiver storage time
Turn-off delay.
Emitter current to 90% I
to 90% I
FGM
G(ON)
G(ON)
Minimum off time
90% I
G(ON)
to 10% I
FGM
Delay time
9
10
Gate volts to o/p emitter current
Turn-off delay
Gate volts to test receiver o/p
Storage time
11
Gate volts to o/p emitter current
Turn-on delay
12
Gate volts to test receiver o/p
Adjustable by R81 + R82
-
-
-
Adjustable by R37
-
-
Adjustable by R38 80
-
-
Measured at low I
Measured at low I
GQM
GQM
23µs
0.2
5.0
-
80
0.8
1.5
-
-
-
25
-
-
-
-
0.2
-
0.8
-
1
0.1
-
1
0.3
-
UnitsMax.Typ.Min.ConditionsSymbol
0.4 µs
5.8 µs
-
µs
110 µs
1.2 µs
2.3 µs
110 µs
-
-
-
-
µs
µs
µs
µs
* t1,t3,t5,t8 are factory settings. † Adjustment of t1 alters t3. 1. Varies with I
t
FGM
I
1
dIFG/dt
0V
t
2
10µs
10%
t
3
Min. ON time
-8V
t
4
t
5
dI
/dt
GQ
t
9
t
10
Test circuit
emitter current
Control card
receiver output
Gate current
Gate voltage
Gate Drive Unit Waveforms
Control card emitter current
Test circuit receiver output
due to gate lead impedance.
GQM
t
6
t
7
90% I
G(ON)
Q
GQT
GQM
I
t
8
Min. OFF
-8V
t
11
t
12
2/4
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