DYNEX GDU90-20302 Datasheet
GDU 90 20302
GDU 90-20302
Gate Drive Unit
Replaces March 1998 version, DS4560-3.1 DS4560-4.0 January 2000
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
APPLICATIONS
■ Used with Gate Turn-Off Thyristors in high current switching
applications
I
I
dIGQ/dt 40A/µs
CONDITIONS - (UNLESS STATED OTHERWISE)
V1 = +5V V2 = +15V V3 = -15V
Test circuit GTO
GDU connection to GTO
Test circuit emitter and gate drive emitter
Test circuit emitter current
DG758BX
500mm CO - AX cable type RC5327230
Honeywell sweetspot HFE 4020 - 013
30mA
Test circuit receiver and gate drive receiver Honeywell sweetspot HFD 3029 - 002
ELECTRICAL CHARACTERISTICS
KEY PARAMETERS
FGM
G(ON)
40A
8A
dI
dI
V
V
V
I
I
I
V1
I
V2
V3
1(Min)
2(Min)
3(Min)
FGM
G(ON)
FG
GQ
Parameter
+5V PSU current
+15V PSU current
-15V PSU currentI
+5V PSU minimum
+15V PSU minimum
-15V PSU minimum
Peak forward gate current
On-state gate current
/dt
Rate of rise of positive gate current
/dt
Rate of rise of negative gate current
500Hz, 50% duty cycle
500Hz
500Hz, I
GTO Tj= 125˚C
= 3000A
T
-
-
-
-
-
Measured 10 - 75% I
IT = 3000A, 90% I
G(ON)
FGM
- 50% I
GQM
Min.
-
-
-
3.8
14.0
14.0
40
--
4.40 A
-
0.48 A
-
10.0 A
-
--
--
--
--
8
-40-
-
40
UnitsMax.Typ.ConditionsSymbol
V
V
V
A
A
A/µs
A/µs
-
1/4
GDU 90 20302
TIMING CHARACTERISTICS
Symbol Parameter
No response pulse width of
†
t
*
t3*
t8*
t
t
1
t
t5*
t
t
2
4
t
6
t
7
9
10
11
input signal
Delay time emitter
current to receiver o/p
Turn-on delay emitter
†
current to 10% I
I
pulse width
FGM
Minimum on time
10% I
to 90% I
FGM
Receiver storage time
Turn-off delay.
Emitter current to 90% I
Minimum off time
90% I
G(ON)
to 10% I
Delay time
Gate volts to o/p emitter current
Turn-off delay
Gate volts to test receiver o/p
Storage time
Gate volts to o/p emitter current
FGM
G(ON)
G(ON)
FGM
Conditions
Adjustable by R81 + R82
-
-
-
Adjustable by R37
-
-
Adjustable by R38 80
-
-
Measured at low I
GQM
Min.
Typ.
23µs
0.4
5.2
-
80
0.5
1.5
Max.
-
-
-
16
-
-
-
-
0.1
-
0.7
-
1
0.1
-
Units
0.8 µs
6.2 µs
-
µs
110 µs
0.9 µs
2.3 µs
110 µs
-
-
-
µs
µs
µs
t
12
Turn-on delay
Gate volts to test receiver o/p
* t1,t3,t5,t8 are factory settings.
Test circuit
emitter current
Control card
receiver output
Gate current
Gate voltage
Gate Drive Unit Waveforms
Control card emitter current
Test circuit receiver output
Measured at low I
†
Adjustment of t1 alters t3. 1. Varies with I
t
1
t
2
10µs
dIFG/dt
FGM
I
0V
10%
t
3
Min. ON time
-8V
t
4
t
5
dI
t
9
t
10
GQ
/dt
GQM
I
-
GQM
due to gate lead impdeance.
GQM
t
6
t
7
90% I
G(ON)
Q
GQT
t
8
Min. OFF
-8V
t
11
t
12
0.8
1
-
µs
2/4
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