DYNEX GDU90-20301 Datasheet
GDU 90 20301
GDU 90-20301
Gate Drive Unit
Replaces March 1998 version, DS4562-4.1 DS4562-5.0 January 2000
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
APPLICATIONS
■ Used with Gate Turn-Off Thyristors in high current switching
applications
I
FGM
I
G(ON)
dIGQ/dt 40A/µs
CONDITIONS - (UNLESS STATED OTHERWISE)
V1 = +5V V2 = +15V V3 = -15V
Test circuit GTO
GDU connection to GTO
Test circuit emitter and gate drive emitter
Test circuit emitter current
DG758BX
500mm CO - AX cable type RC5327230
Hewlett Packard versatile link HFBR 1524
30mA
Test circuit receiver and gate drive receiver Hewlett Packard versatile link HFBR 2524
ELECTRICAL CHARACTERISTICS
KEY PARAMETERS
40A
8A
dI
dI
V
V
V
I
I
I
V1
I
V2
V3
1(Min)
2(Min)
3(Min)
FGM
G(ON)
FG
GQ
Parameter
+5V PSU current
+15V PSU current
-15V PSU currentI
+5V PSU minimum
+15V PSU minimum
-15V PSU minimum
Peak forward gate current
On-state gate current
/dt
Rate of rise of positive gate current
/dt
Rate of rise of negative gate current
Conditions
500Hz, 50% duty cycle
500Hz
500Hz, I
GTO Tj= 125˚C
= 3000A
T
-
-
-
-
-
Measured 10 - 75% I
IT = 3000A, 90% I
G(ON)
FGM
- 50% I
GQM
UnitsMax.Typ.Min.Symbol
-
-
-
3.8
14.0
14.0
40
--
-40-
-
40
4.40 A
-
0.48 A
-
10.0 A
-
--
--
--
--
8
-
V
V
V
A
A
A/µs
A/µs
1/4
GDU 90 20301
TIMING CHARACTERISTICS
No response pulse width of
†
t
*
t3*
1
t
t5*
t
2
4
input signal
Delay time emitter
current to receiver o/p
Turn-on delay emitter
†
current to 10% I
I
pulse width
FGM
Minimum on time
10% I
to 90% I
FGM
FGM
G(ON)
Adjustable by R81 + R82
-
-
-
Adjustable by R37
UnitsMax.Typ.Min.ConditionsSymbol Parameter
23µs
0.2
5.0
-
80
16
-
-
-
-
0.4 µs
5.8 µs
-
µs
110 µs
t8*
t
t
t
t
6
t
7
t
9
10
11
12
Receiver storage time
Turn-off delay.
Emitter current to 90% I
Minimum off time
90% I
G(ON)
to 10% I
Delay time
Gate volts to o/p emitter current
Turn-off delay
Gate volts to test receiver o/p
Storage time
Gate volts to o/p emitter current
Turn-on delay
Gate volts to test receiver o/p
* t1,t3,t5,t8 are factory settings.
Test circuit
emitter current
Gate Drive Unit Waveforms
G(ON)
Adjustable by R38 80
FGM
Measured at low I
Measured at low I
†
Adjustment of t1 alters t3 1. Varies with I
t
1
t
2
Control card
receiver output
dIFG/dt
FGM
Gate current
Gate voltage
Control card emitter current
I
0V
10µs
10%
t
3
Min. ON time
-8V
t
4
t
5
t
9
GQM
I
0.8
1.5
0.2
-
0.8
-
0.1
-
0.3
-
-
-
-
-
GQM
GQM
due to gate lead impedance.
GQM
t
6
t
7
90% I
G(ON)
Q
GQT
dI
/dt
GQ
Min. OFF
t
11
t
8
-8V
-
-
-
1
1
1.2 µs
2.3 µs
110 µs
-
-
-
-
µs
µs
µs
µs
2/4
Test circuit receiver output
t
10
t
12
Loading...