DYNEX DSF8045SK43, DSF8045SK42, DSF8045SK41, DSF8045SK40, DSF8045SK45 Datasheet

DSF8045SK

DSF8045SK

Fast Recovery Diode

Advance Information

Replaces March 1998 version, DS4150-5.6 DS4146-6.0 January 2000

APPLICATIONS

■ Snubber Diode For GTO Applications

FEATURES

■ Double side cooling

■ High surge capability

■ Low recovery charge

VOLTAGE RATINGS

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

DSF8045SK45
DSF8045SK44
DSF8045SK43
DSF8045SK42
DSF8045SK41
DSF8045SK40

4500
4400
4300
4200
4100
4000

Lower voltage grades available.

V

Conditions

= V

RSM

RRM

+ 100V

KEY PARAMETERS

V

RRM

I

F(AV)

I

FSM

Q

r

t

rr

Outline type code: K.

See Package Details for further information.

4500V

430A

3500A
440µC

3.07µs

CURRENT RATINGS

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load, T

= 65oC 680 A

T

case

T

= 65oC 600 A

case

Half wave resistive load, T

T

= 65oC 445 A

case

T

= 65oC 380 A

case

= 65oC 430 A

case

= 65oC 285 A

case

UnitsMax.

1/9

DSF8045SK

SURGE RATINGS

ParameterSymbol

FSM

FSM

Surge (non-repetitive) forward currentI

Surge (non-repetitive) forward currentI

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Parameter

Conditions

10ms half sine; with 0% V

10ms half sine; with 50% V

Conditions Max. Units

Double side cooled

Single side cooled

Clamping force 8.0kN
with mounting compound

= 150oC

RRM, Tj

= 150oC

RRM, Tj

Min.

dc

- 0.048

Cathode dc - 0.103
Double side

Single side

-

- 0.02oC/W

Max. Units

3.5 kA

61.25 x 10

3

2.8 kA

39.2 x 10

3

0.01

A2sI2t for fusingI2t

A2sI2t for fusingI2t

o

C/W

o

C/W- 0.09Anode dc

o

C/W

o

C/W

T

T

stg

Virtual junction temperature

vj

Storage temperature range

Forward (conducting) - 150

-55 175

9.07.0Clamping force-

o

o

kN

C
C

2/9

CHARACTERISTICS

DSF8045SK

Symbol Typ. Units

V

FM

I

RRM

t

rr

Q

RA1

I

RM

K

V

TO

r

T

V

FRM

Forward voltage

Peak reverse current
Reverse recovery time

Recovered charge (50% chord)
Reverse recovery current

Soft factor

Threshold voltage

Slope resistance

Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC - 300 V

DEFINITION OF K FACTOR AND Q

Parameter

Q

= 0.5x IRR(t1 + t2)

RA1

RA1

Conditions Max.

At 1000A peak, T
At V

, T

RRM

case

= 25oC - 4.0 V

case

= 150oC-mA

50

- 3.07

= 1000A, diRR/dt = 100A/µs

I

F

T

= 150oC, VR = 100V

case

- 440 µC

- 240 A

---

At T

= 150oC - 1.7 V

vj

At Tvj = 150oC - 2.1 mΩ

µs

dIR/dt

0.5x I

k = t

t

t

1

2

RR

I

RR

1/t2

τ

3/9