DYNEX DSF8045SK43, DSF8045SK42, DSF8045SK41, DSF8045SK40, DSF8045SK45 Datasheet

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DSF8045SK
DSF8045SK
Fast Recovery Diode
Advance Information
Replaces March 1998 version, DS4150-5.6 DS4146-6.0 January 2000
APPLICATIONS
Snubber Diode For GTO Applications
FEATURES
Double side cooling
High surge capability
Low recovery charge
Type Number Repetitive Peak
Reverse Voltage
V
RRM
V
DSF8045SK45 DSF8045SK44 DSF8045SK43 DSF8045SK42 DSF8045SK41 DSF8045SK40
4500 4400 4300 4200 4100 4000
Lower voltage grades available.
V
Conditions
= V
RSM
RRM
+ 100V
KEY PARAMETERS
V
RRM
I
F(AV)
I
FSM
Q
r
t
rr
Outline type code: K.
See Package Details for further information.
4500V
430A
3500A 440µC
3.07µs
CURRENT RATINGS
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
= 65oC 680 A
T
case
T
= 65oC 600 A
case
Half wave resistive load, T
T
= 65oC 445 A
case
T
= 65oC 380 A
case
= 65oC 430 A
case
= 65oC 285 A
case
UnitsMax.
1/9
DSF8045SK
SURGE RATINGS
ParameterSymbol
FSM
FSM
Surge (non-repetitive) forward currentI
Surge (non-repetitive) forward currentI
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Parameter
Conditions
10ms half sine; with 0% V
10ms half sine; with 50% V
Conditions Max. Units
Double side cooled
Single side cooled
Clamping force 8.0kN with mounting compound
= 150oC
RRM, Tj
= 150oC
RRM, Tj
Min.
dc
- 0.048
Cathode dc - 0.103 Double side
Single side
-
- 0.02oC/W
Max. Units
3.5 kA
61.25 x 10
3
2.8 kA
39.2 x 10
3
0.01
A2sI2t for fusingI2t
A2sI2t for fusingI2t
o
C/W
o
C/W- 0.09Anode dc
o
C/W
o
C/W
T
T
stg
Virtual junction temperature
vj
Storage temperature range
Forward (conducting) - 150
-55 175
9.07.0Clamping force-
o
o
kN
C C
2/9
CHARACTERISTICS
DSF8045SK
Symbol Typ. Units
V
FM
I
RRM
t
rr
Q
RA1
I
RM
K
V
TO
r
T
V
FRM
Forward voltage
Peak reverse current Reverse recovery time
Recovered charge (50% chord) Reverse recovery current
Soft factor
Threshold voltage
Slope resistance
Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC - 300 V
DEFINITION OF K FACTOR AND Q
Parameter
Q
= 0.5x IRR(t1 + t2)
RA1
RA1
Conditions Max.
At 1000A peak, T At V
, T
RRM
case
= 25oC - 4.0 V
case
= 150oC-mA
50
- 3.07
= 1000A, diRR/dt = 100A/µs
I
F
T
= 150oC, VR = 100V
case
- 440 µC
- 240 A
---
At T
= 150oC - 1.7 V
vj
At Tvj = 150oC - 2.1 m
µs
dIR/dt
0.5x I
k = t
t
t
1
2
RR
I
RR
1/t2
τ
3/9
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