DYNEX DSF8035SK35 Datasheet

DSF8035SK
DSF8035SK
Fast Recovery Diode
Replaces March 1998 version, DS4412-1.3 DS4412-2.0 January 2000
APPLICATIONS
Snubber Diode For GTO Applications
FEATURES
Double side cooling
High surge capability
Low recovery charge
Type Number Repetitive Peak
Reverse Voltage
V
RRM
V
DSF8035SK35
3500
V
Conditions
= V
RSM
RRM
+ 100V
KEY PARAMETERS
V I
F(AV)
I
FSM
Q t
rr
RRM
r
3500V
335A
3500A 400µC
4.0µs
Lower voltage grades available.
See Package Details for further information.
CURRENT RATINGS
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
= 65oC 529 A
T
case
T
= 65oC 490 A
case
Half wave resistive load, T
T
= 65oC 355 A
case
T
= 65oC 317 A
case
Outline type code: K.
= 65oC 335 A
case
= 65oC 226 A
case
UnitsMax.
1/8
DSF8035SK
SURGE RATINGS
ParameterSymbol
FSM
FSM
Surge (non-repetitive) forward currentI
Surge (non-repetitive) forward currentI
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Parameter
Conditions
10ms half sine; with 0% V
10ms half sine; with 50% V
Conditions Max. Units
Double side cooled
Single side cooled
Clamping force 8.0kN with mounting compound
= 150oC
RRM, Tj
= 150oC
RRM, Tj
Min.
dc
- 0.048
Cathode dc - 0.103 Double side
Single side
-
- 0.02oC/W
Max. Units
3.0 kA
3
45 x 10
2.4 kA
28.8 x 10
3
0.01
A2sI2t for fusingI2t
A2sI2t for fusingI2t
o
C/W
o
C/W- 0.090Anode dc
o
C/W
o
C/W
T
T
stg
Virtual junction temperature
vj
Storage temperature range
Forward (conducting) - 150
-55 175
9.07.0Clamping force-
CHARACTERISTICS
Symbol Typ. Units
V
FM
I
RRM
t
rr
Q
RA1
I
RM
K
V
TO
Forward voltage
Peak reverse current Reverse recovery time
Recovered charge (50% chord) Reverse recovery current
Soft factor
Threshold voltage
Parameter
Conditions Max.
At 400A peak, T At V
, T
RRM
case
= 25oC - 3.5 V
case
= 150oC-mA
50
- 4.0
IF = 1000A, diRR/dt = 100A/µs T
= 150oC, VR = 100V
case
- 400 µC
- 220 A
1.4 - -
At Tvj = 150oC - 1.8 V
o
o
kN
µs
C C
2/8
r
T
V
FRM
Slope resistance
At Tvj = 150oC - 3.7 m
Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC - 140 V
DSF8035SK
DEFINITION OF K FACTOR AND Q
Q
= 0.5x IRR(t1 + t2)
RA1
dIR/dt
0.5x I
t
1
RR
I
RR
k = t
t
2
1/t2
CURVES
1600
1400
- (A)
1200
F
1000
Measured under pulse conditions
RA1
τ
Tj = 150˚C
800
600
400
Instantaneous forward current I
200
0
0 2.0 4.0 6.0 8.0
Instantaneous forward voltage V
F
Fig.1 Maximum (limit) forward characteristics
Min. Limit Max. Limit
- (V)
3/8
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