DYNEX DSF8025SE21, DSF8025SE20, DSF8025SE25, DSF8025SE24, DSF8025SE23 Datasheet

DSF8025SE

DSF8025SE

Fast Recovery Diode

Advance Information

Replaces March 1998 version, DS4146-4.4 DS4146-5.0 January 2000

APPLICATIONS

■ Induction Heating

■ A.C. Motor Drives

■ Inverters And Choppers

■ Welding

■ High Frequency Rectification

■ UPS

FEATURES

■ Double side cooling

■ High surge capability

■ Low recovery charge

VOLTAGE RATINGS

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

DSF8025SE25
DSF8025SE24
DSF8025SE23
DSF8025SE22
DSF8025SE21
DSF8025SE20

2500
2400
2300
2200
2100
2000

Lower voltage grades available.

CURRENT RATINGS

Conditions

= V

V

RSM

RRM

+ 100V

KEY PARAMETERS

V

RRM

I

F(AV)

I

FSM

Q

r

t

rr

Outline type code: E

See Package Details for further information.

2500V

650A

7500A
540µC

5.0µs

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

I

Mean forward current

RMS value

F

Continuous (direct) forward current

Half wave resistive load, T

= 65oC 1020 A

T

case

T

= 65oC 785 A

case

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load, T

T

= 65oC 604 A

case

T

= 65oC 465 A

case

= 65oC 650 A

case

= 65oC 385 A

case

UnitsMax.

1/8

DSF8025SE

SURGE RATINGS

ParameterSymbol

FSM

FSM

Surge (non-repetitive) forward currentI

Surge (non-repetitive) forward currentI

THERMAL AND MECHANICAL DATA

Symbol Parameter

R

R

th(j-c)

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Conditions

10ms half sine; with 0% V

10ms half sine; with 50% V

Conditions Max. Units

Double side cooled

Single side cooled

Clamping force 8.0kN
with mounting compound

= 150oC

RRM, Tj

RRM, Tj

dc

Cathode dc
Double side

Single side

= 150oC

Max. Units

7.5 kA

281 x 10

3

6.0 kA

180 x 10

3

Min.

- 0.047

- 0.094oC/W

0.018

-

- 0.036

A2sI2t for fusingI2t

A2sI2t for fusingI2t

o

C/W

o

C/W- 0.094Anode dc

o

C/W

o

C/W

T

T

stg

Virtual junction temperature

vj

Storage temperature range -55 175

On-state (conducting) - 150

CHARACTERISTICS

Symbol Typ. Units

V

FM

I

RRM

t

rr

Q

RA1

I

RM

Forward voltage

Peak reverse current
Reverse recovery time

Recovered charge (50% chord)
Reverse recovery current

K Soft factor

V

TO

Threshold voltage

Parameter

Conditions Max.

At 1000A peak, T
At V

, T

RRM

= 150oC-mA

case

= 25oC - 2.3 V

case

50

- 5.0

= 1000A, diRR/dt = 100A/µs

I

F

T

= 150oC, VR = 100V

case

- 540 µC

- 235 A

1.8 - -

At Tvj = 150oC - 1.48 V

o

o

kN9.07.0Clamping force-

µs

C
C

2/8

r

T

V

FRM

Slope resistance

Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC70-V

At T

= 150oC - 0.8 mΩ

vj

DSF8025SE

DEFINITION OF K FACTOR AND Q

Q

= 0.5x IRR(t1 + t2)

RA1

dIR/dt

0.5x I

t

1

RR

I

RR

k = t

t

2

1/t2

CURVES

4000

3500

Measured under pulse conditions

RA1

τ

3000

- (A)

2500

F

2000

1500

Instantaneous forward current I

Tj = 150˚C

Tj = 25˚C

1000

500

0 1.0 2.0 3.0 4.0

Instantaneous forward voltage V

- (V)

F

Fig. 1 Maximum (limit) forward characteristics

3/8