DYNEX DSF21545SV45 Datasheet

DSF21545SV

DSF21545SV

Fast Recovery Diode

Replaces March 1998 version, DS4153-3.1 DS4153-4.0 January 2000

APPLICATIONS

■ The DSF21545SV is a purpose designed freewheel
diode to complement the DG858BW GTO in inverter
circuits, using energy recovery snubbers.

FEATURES

■ The DSF21545SV is designed for fast turn-on thus
minimising reverse current through the GTO.

■ Low recovered charge for low losses.

■ DSF21545SV is housed in a similar outline to that of the

DG858BW therefore offering complete mechanical
compatibility for parallel and series clamping.

VOLTAGE RATINGS

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

DSF21545SV45

4500

Conditions

V

= V

RSM

RRM

+ 100V

KEY PARAMETERS

V
I

F(AV)

I

FSM

Q
t

rr

RRM

r

4500V

3230A

20000A
1800µC

7.0µs

Lower voltage grades available.

See Package Details for further information.

CURRENT RATINGS

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load, T

= 65oC 5080 A

T

case

T

= 65oC 4680 A

case

Half wave resistive load, T

T

= 65oC 3255 A

case

T

= 65oC 2875 A

case

Outline type code: V.

= 65oC 3230 A

case

= 65oC 2070 A

case

UnitsMax.

1/8

DSF21545SV

SURGE RATINGS

ParameterSymbol

FSM

FSM

FSM

Surge (non-repetitive) forward currentI

Surge (non-repetitive) forward currentI

Surge (non-repetitive) forward currentI

2

t for fusingI2t

THERMAL AND MECHANICAL DATA

Symbol Parameter

R

th(j-c)

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsinkR

Conditions

10ms half sine; with 0% V

RRM, Tj

10ms half sine; with 50% V

10ms half sine; with 100% V

Conditions Max. Units

Double side cooled

Single side cooled

Clamping force 35.0kN
with mounting compound

= 150oC

= 150oC

RRM, Tj

= 150oC

RRM, Tj

dc

Cathode dc
Double side

Single side

Max. Units

20 kA

2.0 x 10

16 kA

1.28 x 10

Min.

- 0.0075

- 0.015

0.002

-

- 0.004

6

A2sI2t for fusingI2t

6

A2sI2t for fusingI2t

-kA

2

o

C/W

o

C/W- 0.015Anode dc

o

C/W

o

C/W

o

C/W

sI

-A

T

T

stg

Virtual junction temperature

vj

Storage temperature range -55 150

On-state (conducting) - 150

4834Clamping force-

CHARACTERISTICS

Symbol Typ. Units

V

FM

I

RRM

t

rr

Q

RA1

I

RM

K

V

TO

Forward voltage

Peak reverse current
Reverse recovery time

Recovered charge (50% chord)
Reverse recovery current

Soft factor

Threshold voltage

Parameter

Conditions Max.

At 3000A peak, T
At V

, T

RRM

case

= 25oC - 2.0 V

case

= 150oC-mA

150

7.0 -

= 1000A, diRR/dt = 100A/µs

I

F

T

= 150oC, VR = 100V

case

- 1800 µC

- 500 A

2--

At Tvj = 150oC - 1.25 V

o

o

kN

µs

C
C

2/8

r

T

V

FRM

Slope resistance

At Tvj = 150oC - 0.25 mΩ

Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC-75V

DSF21545SV

DEFINITION OF K FACTOR AND Q

Q

= 0.5x IRR(t1 + t2)

RA1

dIR/dt

0.5x I

t

1

RR

I

RR

k = t

t

2

1/t2

CURVES

5000

Measured under
pulse conditions

4000

- (A)

F

RA1

τ

3000

2000

Tj = 25˚C

Instantaneous forward current I

Tj = 150˚C

1000

0

0 1.0 2.0 3.0 4.0

Instantaneous forward voltage V

- (V)

F

Fig.1 Maximum (limit) forward characteristics

3/8