DYNEX DSF21060SV60, DSF21060SV59, DSF21060SV58, DSF21060SV57, DSF21060SV56 Datasheet

DSF21060SV

DSF21060SV

Fast Recovery Diode

Replaces March 1998 version, DDS4231-2.3 DS4231-3.0 January 2000

APPLICATIONS

■ Freewheel Diode.

■ Antiparallel Diode.

■ Inverters.

■ Choppers.

FEATURES

■ Double Side Cooling.

■ High Surge Capability.

■ Low Recovery Charge.

VOLTAGE RATINGS

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

DSF21060SV60
DSF21060SV59
DSF21060SV58
DSF21060SV57
DSF21060SV56
DSF21060SV55

6000
5900
5800
5700
5600
5500

Conditions

V

= V

RSM

RRM

+ 100V

KEY PARAMETERS

V

RRM

I

F(AV)

I

FSM

Q

r

t

rr

Outline type code: V.

See Package Details for further information.

6000V

1690A

16000A
1200µC

6.5µs

CURRENT RATINGS

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load, T

= 65oC 2655 A

T

case

T

= 65oC 2460 A

case

Half wave resistive load, T

T

= 65oC 1710 A

case

T

= 65oC 1520 A

case

= 65oC 1690 A

case

= 65oC 1090 A

case

UnitsMax.

1/9

DSF21060SV

SURGE RATINGS

ParameterSymbol

FSM

FSM

FSM

Surge (non-repetitive) forward currentI

Surge (non-repetitive) forward currentI

Surge (non-repetitive) forward currentI

2

t for fusingI2t

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

Thermal resistance - junction to case

Parameter

Conditions

10ms half sine; with 0% V

RRM, Tj

10ms half sine; with 50% V

10ms half sine; with 100% V

Conditions Max. Units

Double side cooled

Single side cooled

= 125oC

819.2 x 10

= 125oC

RRM, Tj

1280 x 10

= 125oC

RRM, Tj

Min.

dc

- 0.0075

Cathode dc - 0.015

Max. Units

12.8 kA

3

A2sI2t for fusingI2t

16.0 kA

3

A2sI2t for fusingI2t

-kA

2

o

C/W

o

C/W- 0.015Anode dc

o

C/W

sI

-A

R

th(c-h)

T

T

Thermal resistance - case to heatsink

Virtual junction temperature

vj

stg

Storage temperature range -55 150

Clamping force 40.0kN
with mounting compound

Forwartd (conducting) - 130

Double side

Single side

0.002

-

- 0.004oC/W

44.036.0Clamping force-

o

C/W

o

o

kN

C
C

2/9

CHARACTERISTICS

DSF21060SV

Symbol Typ. Units

V

FM

I

RRM

t

rr

Q

RA1

I

RM

K

V

TO

r

T

V

FRM

Forward voltage

Peak reverse current
Reverse recovery time

Recovered charge (50% chord)
Reverse recovery current

Soft factor

Threshold voltage

Slope resistance

Forward recovery voltage di/dt = 1000A/µs, Tj = 100oC 140 - V

DEFINITION OF K FACTOR AND Q

Parameter

Q

= 0.5x IRR(t1 + t2)

RA1

RA1

Conditions Max.

At 600A peak, T
At V

, T

RRM

case

= 25oC - 3.0 V

case

= 125oC-mA

75

- 6.5

= 1000A, diRR/dt = 100A/µs

I

F

T

= 125oC, VR = 100V

case

- 1500 µC

- 460 A

1.8 - -

At T

= 125oC - 1.625 V

vj

At Tvj = 125oC - 0.66 mΩ

µs

dIR/dt

0.5x I

k = t

t

t

1

2

RR

I

RR

1/t2

τ

3/9