Diodes ZHCS1000 User Manual
Product Summary
V
@ 1A
V
(V) IO (A)
RRM
40 1 0.425 50
F(TYP)
(V)
I
R(TYP)
Description and Applications
DC – DC Converters
Mobile Telecomms
PCMIA & SCSI
@ VR=30V
(μA)
ZHCS1000
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features and Benefits
High current capability (IF = 1A)
Low V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
F
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0089 grams (approximate)
Top View
Ordering Information (Note 4)
Device Packaging Shipping
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
ZHCS1000TA SOT23 3000/Tape & Reel
and Lead-free.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZHCS1000
Document number: DS33220 Rev. 4 - 2
ZS1
www.diodes.com
ZS1 = Product Type Marking Code
1 of 5
December 2013
© Diodes Incorporated
(BR)
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Continuous Reverse Voltage
Continuous Forward Current
Forward Voltage @ IF = 1A (typ) VF
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current
t
100μs
t10ms
I
I
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation, TA = +25°C PD
Junction Temperature
Storage Temperature Range
T
J
T
STG
V
I
F
FAV
FSM
ZHCS1000
R
40 V
1 A
425 mV
1750 mA
12 A
5.2 A
500 mW
+125 °C
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage
V
40 60 — V
R
— 240 270
— 265 290
— 305 340
Forward Voltage (Note 5)
V
F
— 355 400
— 390 450
mV
— 425 500
— 495 600
— 420 —
Reverse Current (Note 6)
Total Capacitance
I
R
C
T
— 50 100 μA
— 25 — pF
Reverse Recovery Time trr — 12 — ns
Notes: 5. Measured under pulsed conditions. Pulse width = 300μS.
6. Short duration pulse test used to minimize self-heating effect.
ZHCS1000
Document number: DS33220 Rev. 4 - 2
2 of 5
www.diodes.com
IR = 300μA
= 50mA
I
F
I
= 100mA
F
I
= 250mA
F
I
= 500mA
F
I
= 750mA
F
I
= 1A
F
I
= 1.5A
F
I
= 1A, TA = +100°C
F
VR = 30V
f = 1MHz, VR = 30V
Switched from I
I
= 500mA
R
Measured @ I
= 500mA to
F
= 50mA
R
December 2013
© Diodes Incorporated
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