Diodes ZDT6753 User Manual
SM-8 COMPLEMENTARY MEDIUM POWER
C
1
C
1
C
2
C
2
TRANSISTORS
ISSUE 1 JANUARY 1996
B
1
NPN
E
1
B
2
PNP
E
2
PARTMARKING DETAIL T6753
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL NPN PNP UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Operating and Storage Temperature
Range
CM
C
T
CBO
CEO
EBO
j:Tstg
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at T
Any single die on
= 25°C*
amb
Both die on equally
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
P
tot
120 -120 V
100 -100 V
ZDT6753
SM-8
(8 LEAD SOT223)
5-5 V
6-6 A
2-2 A
-55 to +150 °C
2.25
2.75
18
22
55.6
45.5
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
3 - 375
ZDT6753 ZDT6753
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer Ratio
Transition Frequency f
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
120 V
100 V IC=10mA, IB =0*
5V
70
100
55
25
140 175 MHz IC=100mA, VCE=5V
= 25°C).
amb
=100µA, I
I
C
=100µA, I
I
E
V
=100V
CB
V
=100V,T
CB
V
=4V, IC =0
EB
=1A, IB=100mA*
C
=2A, IB=200mA*
I
C
0.13
0.23
0.1
10
0.1
0.3
0.5
µA
µA
µA
VI
0.9 1.25 V IC=1A, IB=100mA*
0.8 1 V IC=1A, VCE=2V*
200
200
110
55
300
I
=50mA, VCE=2V
C
I
=500mA, VCE=2V*
C
I
=1A, VCE=2V*
C
=2A, VCE=2V*
I
C
f=100MHz
E
C
amb
=0
=0
=100°C
Output Capacitance C
Switching Times t
obo
on
t
off
80
1200
*Measured under pulsed conditions. Pulse width=300
For typical characteristics graphs see FZT653 datasheet.
30 pF VCB=10V, f=1MHz
ns
IC=500mA, VCE=10V
I
=50mA
B1=IB2
ns
µs. Duty cycle ≤ 2%
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