Diodes ZDT1048 User Manual

ZDT1048
SM-8 Dual NPN medium power high gain transistors

Summary

BV

I

V

P

CEO

C(cont)

CE(sat)

= 2.75W

D

> 17.5V

= 5A

< 75mV @ 1A

Description

Advanced process capability has been used to achieve
this high performance device. Combining two NPN
transistors in the SM-8 package provides a compact
solution for the intended applications.

Features

• Dual NPN device

• Very low saturation voltage

•High gain

• SM 8 package

Applications

• CCFL invertors

• Royer circuits

B1

C1

E1

C2

B2

E2

Ordering information

DEVICE Reel size

(inches)

ZDT1048TA 7 12 1000

Tape width

(mm)

Quantity

per reel

Device marking

T1048

Issue 2 - December 2007 1 www.zetex.com

© Zetex Semiconductors plc 2007

ZDT1048

Absolute maximum ratings

Parameter Symbol Value Unit

Collector-base voltage V

Collector-emitter voltage V

Emitter-base voltage V

Peak pulse current I

Continuous collector current I

Base current I

Operating and storage temperature range T

Thermal Characteristics

Parameter Symbol Value Unit

Total power dissipation at T
Any single die “on”

Both die “on” equally
Derate above 25°C*

Any single die “on”
Both die “on” equally

Thermal resistance - junction to ambient*
Any single die “on”
Both die “on” equally

* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to
2 inches square.

amb

= 25°C*

50 V

CBO

17.5 V

CEO

5 V

EBO

CM

5 A

C

500 mA

B

-55 to +150 °C

j:Tstg

P

tot

20 A

2.25

2.75

18
22

mW/°C
mW/°C

W
W

V

55.6

45.5

°C/W
°C/W

Issue 2 - December 2007 2 www.zetex.com

© Zetex Semiconductors plc 2007