DIODES US1D, US1J, US1B, US1M, US1K Datasheet
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Features
Glass Passivated Die Construction
Diffused Junction
Ultra-Fast Recovery Time for High Efficiency
Low Forward Voltage Drop, High Current
Capability, and Low Power Loss
Surge Overload Rating to 30A Peak
Ideally Suited for Automated Assembly
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Solder Plated Terminal - Solderable
per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Mounting Position: Any
US1A - US1M
1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER
B
Dim Min Max
A
C
D
J
H
G
E
All Dimensions in mm
A
B
C
D
E
G
H
J
SMA
2.29 2.92
4.00 4.60
1.27 1.63
0.15 0.31
4.80 5.59
0.10 0.20
0.76 1.52
2.01 2.62
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol US1A US1B US1D US1G US1J US1K US1M Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @ TT= 75C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage Drop @ IF= 1.0A
Peak Reverse Current @ TA= 25C
at Rated DC Blocking Voltage @ T
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance, Junction to Terminal
Operating and Storage Temperature Range
Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Measured with I
= 0.5A, IR= 1.0A, Irr= 0.25A.
F
= 100C
A
V
V
V
R(RMS)
I
V
I
R
T
j,TSTG
RRM
RWM
V
R
I
O
FSM
FM
RM
t
rr
C
JT
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
j
TA= 25C unless otherwise specified
1.0 A
30 A
1.0 1.3 1.7 V
5.0
100
50 75 ns
20 10 pF
30 C/W
-65 to +150 C
A
DS16008 Rev. B1-2 1 of 2 US1A - US1M
)
g
10
)
g
)
g
g
O
I , AVERAGE RECTIFIED CURRENT (A)
1.0
0.5
40
30
0
25 50
Fi
75
T , TERMINAL TEMPERATURE ( C)
T
100 125 150
°
. 1 Forward Current DeratingCurve
Single Half Sine-Wave
(JEDEC Method)
µ
F
I , INSTANTANEOUS FORWARD CURRENT (A
1000
US1A - US1D
US1G
1.0
US1J - US1M
0.1
T - 25 Cj°
Pulse Width = 300 sµ
0.01
0 0.4 0.8
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fi
.2 Typical Forward Characteristics
1.2 1.6 2.0
100
T = 100 Cj°
10
20
1.0
T = 25 Cj°
10
T = 150 Cj°
FSM
I , PEAK FORWARD SURGE CURRENT (A
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fi
. 3 Forward Surge Current DeratingCurve
50 NI (Non-inductive)Ω
(+)
50V DC
Approx
(-)
Device
Under
Test
1.0NIΩ
10 NIΩ
Oscilloscope
(Note 1)
(-)
Pulse
Generator
(Note 2)
(+)
0.1
0.01
R
I , INSTANTANEOUS REVERSE CURRENT ( A
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fi
.4 Typical Reverse Characteristics
t
rr
+0.5A
0A
-0.25A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.
2. Rise Time = 10ns max. Input Impedance = 50 .ΩΩ
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse RecoveryTime Characteristic and Test Circuit
DS16008 Rev. B1-2 2 of 2 US1A - US1M
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