Features
• Low Forward Voltage Drop
• Excellent High Temperature Stability
• Patented Super Barrier Rectifier Technology
• Soft, Fast Switching Capability
• Lead Free Finish, RoHS Compliant (Note 1)
• “Green” Molding Compound (No Br, Sb)
NEW PRODUCT
Top View
SBR10100CTL
SUPER BARRIER RECTIFIER
Mechanical Data
• Case: TO252
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.37 grams (approximate)
1
2
3
Package Pin-Out Configuration
10A SBR
®
Ordering Information (Note 2)
Part Number Case Packaging
SBR10100CTL-13 TO252 2500 pieces/reel
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes
2. For packaging details, go to our website at http://www.diodes.com.
Marking Information
SBR is a registered trademark of Diodes Incorporated
10100CT
YYWW
SBR10100CTL
Document number: DS31206 Rev. 3 - 2
SBR
AB
SBR10100CT = Product Type Marking Code
B = Foundry and Assembly Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 09 = 2009)
WW = Week (01 - 53)
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Maximum Ratings (Per Leg) @T
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current Per Device
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
NEW PRODUCT
Thermal Characteristics (Per Leg)
Characteristic Symbol Value Unit
Typical Thermal Resistance (Note 4)
Operating and Storage Temperature Range
= 25°C unless otherwise specified
A
V
RRM
V
RWM
V
RM
V
R(RMS
I
O
I
FSM
R
JC
T
, T
J
STG
SBR10100CTL
100 V
71 V
10 A
110 A
22 ºC/W
-65 to +175 ºC
Electrical Characteristics (Per Leg) @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop
Leakage Current (Note 3)
Notes: 3. Short duration pulse test used to minimize self-heating effect
4. Device mounted on FR-4 substrate PC board, 1oz copper .with minimum recommended pad layout.
5. Device mounted on Polymide substate, 1*MRP, 2oz, copper, PC boards.
2.
2.0
(W)
A
1.5
DISSI
1.0
WE
,
D
0.5
-
V
F
I
R
0.77
-
0.63
-
-
0.84
0.71
-
-
0.2
25
V
mA
I
F
= 5A, TJ = 125ºC
I
F
V
= 100V, TJ = 25ºC
R
V
= 100V, TJ = 125ºC
R
= 5A, TJ = 25ºC
100
(A)
10
T = 175°C
T = 150°C
A
A
T = 85°C
A
T = 25°C
A
S F
0.1
1
T = 125°C
A
ANE
0.01
AN
F
I, INS
0
012345
I AVERAGE FORWARD CURRENT (A)
F(AV)
Fig. 1 Forward Power Dissipation
0.001
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V , INSTANT ANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Characteristics
SBR is a registered trademark of Diodes Incorporated
SBR10100CTL
Document number: DS31206 Rev. 3 - 2
2 of 4
www.diodes.com
December 2011
© Diodes Incorporated