Diodes SBR05U20SN User Manual

)
(BR)
Features
Ultra Low Forward Voltage Drop
Superior Reverse Avalanche Capability
Patented Super Barrier Rectifier Technology
Soft, Fast Switching Capability
150ºC Operating Junction Temperature
Lead Free Finish, RoHS Compliant (Note 1)
“Green” Device, (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Top View
SBR05U20SN
SURFACE MOUNT SUPER BARRIER RECTIFIER
Mechanical Data
Case: SC-59
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish annealed over Copper leadframe Solderable per MIL-STD-202, Method 208
Polarity: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
Top View
Device Schematic
0.5A SBR
®
Maximum Ratings @T
Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage Average Rectified Output Current (See Figure 1) Non-Repetitive Peak Forward Surge Current
= 25°C unless otherwise specified
A
V
RRM
V
RWM
V
RM
V
R(RMS
I
O
I
FSM
20 V
14 V
500 mA
3 A
Thermal Characteristics
Maximum Thermal Resistance Thermal Resisitance Junction to Ambient (Note 4)
Operating and Storage Temperature Range
Electrical Characteristics @T
Reverse Breakdown Voltage (Note 3) Forward Voltage Drop
Leakage Current (Note 3)
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Short duration pulse test used to minimize self-heating effect.
4. Polymide PCB, 2oz, copper minimum recommended pad layout per http://www.diodes.com
SBR05U20SN
Document number: DS31387 Rev. 5 - 2
Characteristic Symbol Value Unit
R
θJA
T
, T
J
STG
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
V
R
V
F
I
R
1 of 4
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20 - - V
-
-
134 ºC/W
-65 to +150 ºC
IR = 100µA
= 0.5A, TJ = 25ºC
0.51
0.48 6
0.5
0.56
0.53 100
20
V
µA
mA
I
F
I
= 0.5A, TJ = 125ºC
F
= 20V, TJ = 25ºC
V
R
= 20V, TJ = 125ºC
V
R
August 2010
© Diodes Incorporated
P, P
OWER
PATIO
T
T
O
U
O
RWAR
OLTAG
TANT
O
US R
R
OLTAG
RAG
O
RWAR
C
U
R
R
T
SBR05U20SN
0.9
0.8
0.7
N (W)
0.6
1
E (A)
0.1
D V
0.5
DISSI
0.4
0.01
S F
0.3
D
0.2
ANE AN
0.001
0.1
F
I , INS
0.0001 0 200 400 600 800
V , INSTANTANEOUS FORWARD VOLTAGE(mV)
F
Fig. 2 Typical Forward Characteristics
180 160
10,000
E (µA)
1,000
0
0
0.3 0.6 0.9 1.2
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Fig. 1 Forward Power Dissipation
140
SE V
EVE
ANE
R
I , INS
(A) EN
D
E F
100
10
1
0.1
0.01 04 81216
V , INSTANTANEOUS REVERSE VOLTAGE(V)
R
Fig. 3 Typical Reverse Characteristics
0.70
0.60
0.50
0.40
0.30
0.20
20
120 100
80
60
T
40
C , TOTAL CAPACIT ANCE (pF)
20
0
0.1 1 10 100 V , DC REVERSE VOL TAGE (V)
R
Fig. 4 Total Capacitance vs. Reverse Voltage
150
125
100
75
50
0.10
F(AV)
I, AVE
0
0
25
T , AMBIENT TEMPERATURE (°C)
A
50
75
100 125
150
175
Fig. 5 Forward Current Derating Curve
25
A
T , DERATED AMBIENT TEMPERATURE (°C)
0
02468101214161820
V , DC REVERSE VOL TAGE (V)
R
Fig. 6 Operating Temperature Derating
SBR05U20SN
Document number: DS31387 Rev. 5 - 2
2 of 4
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August 2010
© Diodes Incorporated
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