Features
• Ultra Low Leakage Current
• Excellent High Temperature Stability
• Patented Super Barrier Rectifier Technology
• Soft, Fast Switching Capability
• 150ºC Operating Junction Temperature
• Lead Free Finish, RoHS Compliant (Note 1)
• “Green” Device (Note 3)
1
2
Top View
Device Schematic
SBR05M60BLP
®
0.5A SBR
BRIDGE
SUPER BARRIER RECTIFIER
Mechanical Data
• Case: DFN3030-4
• Case Material: Molded Plastic “Green” Molding Compound,
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu Over Copper Lead Frame,
Solderable per MIL-STD-202, Method 208
• Polarity: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.02 grams (approximate)
4
3
1
2
Pin Confi
N/C
Top View
uration
4
3
Maximum Ratings @T
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load (Per Diode)
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
V
V
RRM
RWM
V
I
FSM
RM
I
O
60 V
500 mA
8 A
Thermal Characteristics
Characteristic Symbol Typ Max Unit
Thermal Resistance Junction to Ambient Air (Note 2)
Operating and Storage Temperature Range
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage (Per Diode)
Reverse Current (Note 4) (Per Diode)
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
SBR is a registered trademark of Diodes Incorporated.
SBR05M60BLP
Document number: DS31771 Rev. 2 - 2
2. Polymide PCB, 2 oz. copper; minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
4. Short duration pulse test used to minimize self-heating effect.
= 25°C unless otherwise specified
A
V
F
I
R
-
-
www.diodes.com
R
, T
T
J
1 of 4
JA
STG
-
0.43
0.40
17
2.8
215 - °C/W
-55 to +150 °C
I
0.42
0.49
0.46
100
20
V
µA
mA
= 0.25A, TJ = 25ºC
F
= 0.5A, TJ = 25ºC
I
F
I
= 0.5A, TJ = 125ºC
F
V
= 60V, TJ = 25ºC
R
= 60V, TJ = 125ºC
V
R
© Diodes Incorporated
June 2010
SBR05M60BLP
0.9
0.8
1
(A)
0.7
N (W)
0.6
0.1
T = 150°C
A
T = 125°C
A
0.5
DISSI
,
D
0.4
0.3
0.2
0.01
A
T = 85°C
A
T = 25°C
A
0.1
F
I, I
0
0 0.5 1 1.5
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Fig. 1 Forward Power Dissipation
10,000
(µA)
1,000
T = 150°C
A
T = 125°C
A
0.001
0 100 200 300 400 500 600
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
Fig. 2 Typical Forward Characteristics
0.8
(A)
0.7
0.6
SE
EVE
R
I, I
)
E (°
EM
, AMBIE
T = 85°C
A
100
10
T = 25°C
A
1
0102030405060
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Fig. 3 Typical Reverse Characteristics
175
150
125
100
75
50
A
25
0.5
0.4
E F
0.3
0.2
0.1
F(AV)
I, AVE
0
25 50 75 100 125 150 175
T , AMBIENT TEMPERATURE (°C)
A
Fig. 4 Forward Current Derating Curve
0
0 6 12 18 24 30 36 42 48 54 60
V , DC REVERSE VOLTAGE (V)
R
66
Fig. 5 Operating Temperature Derating
SBR is a registered trademark of Diodes Incorporated.
SBR05M60BLP
Document number: DS31771 Rev. 2 - 2
2 of 4
www.diodes.com
June 2010
© Diodes Incorporated