DIODES SBM835L-13 Datasheet

SBM835L

S

8A LOW VF SCHOTTKY BARRIER RECTIFIER

POWERMITEÒ3

Features

Guard Ring Die Construction for

·

Transient Protection
Low Forward Voltage Drop

·

For Use in Low Voltage, High Frequency

·

Inverters, Free Wheeling, and Polarity
Protection Applications

Plastic Material: UL Flammability

·

Classification Rating 94V-0

NEW PRODUCT

Mechanical Data

Case: POWERMITEâ3 Molded Plastic

·

Terminals: Solderable per MIL-STD-202,

·

Method 208
Polarity: See Diagram

·

· Marking: Type Number, See also Sheet 2

· Weight: 0.072 grams (approx.)

Maximum Ratings

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current @ TS= 88°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method) @ T

Typical Thermal Resistance Junction to Case

Typical Thermal Resistance Junction to Soldering Point

Operating Temperature Range

Storage Temperature Range

@ TA= 25°C unless otherwise specified

Characteristic Symbol

UNDER DEVELOPMENT

A

P

3

B

12

D

RRM
RWM

V

R

I

O

FSM

qJC

qJS

T

STG

C

j

= 88°C

C

C

PIN 1

PIN 2

Note: Pins 1 & 2 must be electrically

connected at the printed circuit board.

V
V

V

R(RMS)

I

R

R

T

E

J

M

K

L

PIN 3, BOTTOMSIDE
HEAT

INK

POWERMITEâ3

A

B

C

D

E

G

H

J

K

L

M

P

Min Max

4.03 4.09

6.40 6.61

.889 NOM

1.83 NOM

1.10 1.14

.178 NOM

5.01 5.17

4.37 4.43

.178 NOM

.71 .77

.36 .46

1.73 1.83

Unit

G

Dim

H

All Dimensions in mm

Value

35 V

25 V

8A

75 A

0.9 °C/W

3.2 °C/W

-65 to +125 °C

-65 to +150 °C

Electrical Characteristics

Characteristic Symbol

Reverse Breakdown Voltage (Note 1)

Forward Voltage (Note 1)

Peak Reverse Current (Note 1)

Notes: 1. Short duration test pulse used to minimize self-heating effect.

@ TA= 25°C unless otherwise specified

Min Typ Max Unit

V

(BR)R

V

FM

I

RM

35 ¾¾V

¾
¾

¾
¾

0.47

0.38

0.07

7.5

0.51

0.41

1.4
35

V

mA

I

I
I

T
T

Test Condition

= 1mA

R

= 8A, TS= 25°C

F

= 8A, TS= 125°C

F

= 25°C, VR= 35V

S

= 100°C, VR= 35V

S

DS30225 Rev. 1 - 1 1 of 2 SBM835L

)

g

O

O

WARD CURRENT (A)

O

O

e

R

100

10

0.1

1

T = 125ºC

j

T = 25ºC

j

T = 75ºC

j

100

10

1.0

T = 125ºC

J

T = 100ºC

J

T = 75ºC

J

US F

0.01

NEW PRODUCT

0.001

F

I , INSTANTANE

0.0001

100

WARD SURGE CURRENT (A)
R

0 100 200 300

V , INSTANTANEOUS FORWARD VOLTAGE (V)

80

60

40

20

400 500

F

Fig. 1 Typical Forward Characteristics

Single Half-Sine-Wave

(JEDEC Method)

600

T = 88°C

C

700

0.01

0.001

R

I , INSTANTANEOUS REVERSE CURRENT (mA

10,000

ACITANCE (pF)

1000

N CAP

J

C , JUNCTI

0.1

T = 25ºC

J

10

0

5

V , INSTANTANEOUS REVERSE VOLTAGE (V)

R

Fi

.2 Typical Reverse Characteristics

15 20

25

f=1MHz

30

35

FSM

I , PEAK F

0

1 10 100

NUMBER OF CYCLES AT 60 Hz

Fig. 3 Max Non-Repetitive Peak Fwd Surge Current

Ordering Information

Device

SBM835L-13

Notes: 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

(Note 2)

Packaging Shipping

POWERMITEâ3 5000/Tape & Reel

100

5

0

V , REVERSE VOLTAGE (V)

Fig. 4 Typical Junction Capacitance vs. Reverse Voltag

10

R

15

20

25

30

35

Marking Information

SBM835L

YYWW

POWERMITE is a registered trademark of Microsemi Corporation.

DS30225 Rev. 1 - 1 2 of 2 SBM835L

SBM835L = Product type marking code

= Manufacturers’ code marking

YYWW = Date code marking

YY = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52

UNDER DEVELOPMENT