DIODES SBM540 Datasheet
Features
S
· Guard Ring Die Construction for
TCUDORPWEN
Transient Protection
· Low Power Loss, High Efficiency
· Low Forward Voltage Drop
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
· Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
· Case: POWERMITEâ3, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Moisture sensitivity: Level 1 per J-STD-020A
· Polarity: See Diagram
· Marking: Type Number, See also Sheet 3
· Weight: 0.072 grams (approx.)
· Ordering Information, See Sheet 3
SBM540
5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
POWERMITEâ3
A
E
P
3
J
B
12
M
D
C
PIN 1
PIN 2
Note: Pins 1 & 2 must be electrically
connected at the printed circuit board.
C
K
L
PIN 3, BOTTOMSIDE
INK
HEAT
G
H
POWERMITEâ3
A
B
C
D
E
G
H
J
K
L
M
P
Min Max
4.03 4.09
6.40 6.61
.889 NOM
1.83 NOM
1.10 1.14
.178 NOM
5.01 5.17
4.37 4.43
.178 NOM
.71 .77
.36 .46
1.73 1.83
Dim
All Dimensions in mm
Maximum Ratings
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (see also Figure 5)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method) @ T
Typical Thermal Resistance Junction to Soldering Point
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics
Characteristic Symbol
Reverse Breakdown Voltage (Note 1)
Forward Voltage (Note 1)
Reverse Current (Note 1)
Total Capacitance
@ TA = 25°C unless otherwise specified
Characteristic Symbol
= 90°C
C
@ TA = 25°C unless otherwise specified
V
(BR)R
V
FM
I
RM
C
Value
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
R
qJS
T
j
T
STG
Min Typ Max Unit
40 ¾¾V
0.48
¾
0.45
¾
0.59
¾
0.56
¾
¾
0.05
¾
T
¾ 250 ¾ pF
2.5
0.52
¾
¾
¾
0.5
20
40 V
28 V
5A
100 A
3.2 °C/W
-55 to +125 °C
-55 to +150 °C
Test Condition
IR = 0.5mA
I
= 5A, TS = 25°C
F
= 5A, TS = 125°C
I
F
V
I
= 10A, TS = 25°C
F
I
= 10A, TS = 125°C
F
TS = 25°C, VR = 40V
mA
= 100°C, VR = 40V
T
S
f = 1.0MHz, V
Unit
= 4.0V DC
R
Notes: 1. Short duration test pulse used to minimize self-heating effect.
DS30297 Rev. 3 - 2 1 of 3 SBM540
www.diodes.com
100
100
g
TCUDORPWEN
O
10
1.0
T = 100°C
J
T = 25° C
J
10
1.0
0.1
T = 125°C
J
T = 100°C
J
T = 75°C
J
0.1
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.01
0
0.2 0.4
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
0.6
0.8
Fig. 1 Typical Forward Characteristics
125
100
Single Half-Sine-Wave
(JEDEC Method)
T = 90°C
C
75
50
25
FSM
I , PEAK FORWARD SURGE CURRENT (A)
0
110100
TAL CAPACITANCE (pF)
T
C,T
0.01
0.001
R
I , INSTANTANEOUS REVERSE CURRENT (mA)
0
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
10
5
15
20
T = 25°C
J
25
30
Fig. 2 Typical Reverse Characteristics
1000
100
10
0.1 1 10 100
35 40
T = 25°C
j
f=1MHz
. 3 Max Non-Repetitive Peak Forward Surge Current
NUMBER OF CYCLES AT 60 Hz
Fi
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Total Capacitance
vs. Reverse Voltage
DS30297 Rev. 3 - 2 2 of 3 SBM540
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