DIODES SBL530, SBL535, SBL540, SBL545, SBL550 Datasheet
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Features
Schottky Barrier Chip
·
Guard Ring Die Construction for
·
Transient Protection
Low Power Loss, High Efficiency
·
High Surge Capability
·
High Current Capability and Low Forward
·
Voltage Drop
For Use in Low Voltage, High Frequency
·
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material: UL Flammability
·
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
·
Terminals: Plated Leads Solderable per
·
MIL-STD-202, Method 208
· Polarity: See Diagram
· Weight: 2.3 grams (approx.)
· Mounting Position: Any
· Marking: Type Number
SBL530 - SBL560
5.0A SCHOTTKY BARRIER RECTIFIER
TO-220AC
L
B
C
K
Pin 1 Pin 2
J
R
Pin 1
Pin 2
D
E
N
Case
M
A
G
P
Dim Min Max
14.22 15.88
A
9.65 10.67
B
2.54 3.43
C
5.84 6.86
D
E
G
J
K
L
M
N
P
R
All Dimensions in mm
¾ 6.35
12.70 14.73
0.51 1.14
3.53Æ 4.09Æ
3.56 4.83
1.14 1.40
0.30 0.64
2.03 2.92
4.83 5.33
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1) @ T
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop @ IF= 5.0A, TC= 25°C
Peak Reverse Current @TC= 25°C
at Rated DC Blocking Voltage @ T
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
= 95°C
C
= 100°C
C
V
V
V
R(RMS)
I
V
I
R
T
j,TSTG
RRM
RWM
V
R
I
O
FSM
FM
RM
C
qJC
j
@ TA= 25°C unless otherwise specified
SBL
530
30 35 40 45 50 60 V
21 24.5 28 31.5 35 42 V
SBL
535
SBL
540
0.55 0.70 V
-65 to +150 °C
SBL
545
5.0 A
175 A
0.5
33
500 pF
3 °C/W
SBL
550
SBL
560
Unit
mA
DS23043 Rev. D-2 1 of 2 SBL530-SBL560
100
g
300
g
000
g
100
g
5
g
4
3
2
1
(AV)
I , AVERAGE FORWARD CURRENT (A)
0
0 50 100 150
T , CASE TEMPERATURE (°C)
C
Fi
. 1 Forward Current DeratingCurve
8.3 ms single half-sine-wave
JEDEC method
250
200
SBL530 - SBL545
10
1.0
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.1
0.2 0.4 0.6
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
.2 Typical Forward Characteristics per Element
Fi
4
1000
SBL550 - SBL560
T = 25 C
°
j
Pulse width = 300 s
2% duty cycle
0.8
T=25Cj°
µ
FSM
I , PEAK FORWARD SURGE CURRENT (A)
150
100
50
j
C , CAPACITANCE (pF)
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
. 3 Max Non-Repetitive Surge Current
Fi
10
100
0.1 1.0 10 100
V , REVERSE VOLTAGE (V)
Fi
T = 100 Cj°
T = 75 Cj°
R
.4 Typical Junction Capacitance per element
1.0
0.1
T = 25 Cj°
R
I , INSTANTANEOUS REVERSE CURRENT (mA)
0.01
0 40 80 120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
.5 Typical Reverse Characteristics
Fi
DS23043 Rev. D-2 2 of 2 SBL530-SBL560
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