Diodes PAM2319 User Manual

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PAM2319

DUAL HIGH-EFFICIENCY PWM STEP-DOWN DC-DC CONVERTER

Description

The PAM2319 is a dual step-down current-mode, DC-DC converter.

At heavy load, the constantf requency PWM control performs

excellent stability and transient response. To ensure the longest

battery life in portable applications, the PAM2319 provides a power-

saving Pulse-Skipping Modulation (PSM) mode to reduce quiescent

current under light load operation.

The PAM2319 supports a range of input voltages from 2.7V to 5.5V,

allowing the use of a single Li+/Li-polymer cell, multiple Alkaline/NiMH

cell, USB, and other standard power sources. The dual output

voltages are adjustable from 1.0V to 3.3V. Both channels employ

internal power switch and synchronous rectifier to minimize external

part count and realize high efficiency. During shutdown, the input is

disconnected from the output and the shutdown current is less than

0.1µA. Other key features include under-voltage lockout, soft-start,

short circuit protection and thermal shutdown.

Features

Pin Assignments

Applications

 Supply Voltage: 2.7V to 5.5V  Output Voltage:

 Vo1 ADJ/1000mA

 Vo2 ADJ/2000mA

 Low Quiescent Current: Channel 1: 40µA; Channel 2: 55µA  High Efficiency:  Switching Frequency: 3MHz(Channel 1)

2.5MHz(Channel 2)

 Internal Synchronous Rectifier  Soft Start  Under-Voltage Lockout  Short Circuit Protection  Thermal Shutdown  Small W-DFN3X3-12L Pb-Free/Halogen Free Package  RoHS/REACH Compliant

PAM2319

Document number: DSxxxxx Rev. 1 - 1

www.diodes.com

 Portable Electronics  Personal Information Appliances  Wireless and DSL Modems

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Typical Applications Circuit

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PAM2319

Figure 1. Adjustable Voltage Regulator

Pin Descriptions

Number

1 FB2 Channel 2 feedback pin internally set to 0.6V.

2 VIN2 Input voltage pin of channel 2.

3 AGND2 Signal ground of channel 2 for small signal components.

4 VIN1 Input voltage pin of channel 1.

5 PGND1 Main power ground pin of channel 1

6 SW1 Channel 1 switching pin. The drains of the internal main and synchronous power MOSFET.

7 FB1 Channel 1 feedback pin internally set to 0.6V.

8 AGND1 Signal ground of channel 1 for small signal components.

9 EN1 Enable control input. Pull logic high to enable Vo1. Pull logic low to disable.

10 EN2 Enable control input. Pull logic high to enable Vo2. Pull logic low to disable.

11 PGND2 Main power ground pin of channel 2.

12 SW2 Channel 2 switching pin. The drains of the internal main and synchronous power MOSFET.

— Exposed Pad Connect to GND

PAM2319

Document number: DSxxxxx Rev. 1 - 1

W-DFN3x3-12L

Pin Name

Function

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Functional Block Diagram

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PAM2319

Note: 1. The diagram above just shows one channel.

Absolute Maximum Ratings (@T

These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device reliability. All voltages are with respect to ground.

Parameter Rating Unit

Input Voltage -0.3 to 6.5 V

EN1, FB1, SW1, EN2, FB2 and SW2 Pin Voltage

Maximum Junction Temperature 150 °C

Storage Temperature Range -65 to +150 °C

Soldering Temperature 260, 10sec °C

Recommended Operating Conditions (@T

Parameter Rating Unit

Supply Voltage 2.7 to 5.5 V

Ambient Temperature Range -40 to +85

Junction Temperature Range -40 to +1255

= +25°C, unless otherwise specified.)

A

-0.3 to (V

+0.3)

IN

= +25°C, unless otherwise specified.)

A

V

°C

Thermal Information

Parameter Symbol Package Max Unit

Thermal Resistance (Junction to Ambient)

Thermal Resistance (Junction to Case)

θ

JA

θ

JC

PAM2319

Document number: DSxxxxx Rev. 1 - 1

W-DFN3x3-12L 60

W-DFN3x3-12L 8.5

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°C/W

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PAM2319

Electrical Characteristics (@T

Channel 1

Parameter Symbol Test Conditions Min Typ Max Units

Input Voltage Range

UVLO Threshold

Regulated Feedback Voltage

Reference Voltage Line Regulation

Regulated Output Voltage Accuracy

Peak Inductor Current

Output Voltage Line Regulation LNR

Output Voltage Load Regulation LDR

Quiescent Current

Shutdown Current

Oscillator Frequency

Drain-Source On-State Resisitance

SW Leakage Current ILSW ±0.01 1 µA

Efficiency η

PSM Threshold

EN Threshold High

EN Threshold Low

EN Leakage Current

Soft-Start

Over Temperature Protection OTP 150 °C

OTP Hysteresis OTH 30 °C

PAM2319

Document number: DSxxxxx Rev. 1 - 1

= +25°C, VIN = 3.3V, VO = 1.8V, CIN = 10µF, CO = 10µF, L = 1µH, unless otherwise specified.)

A

V

IN

V

UVLO

V

FB

∆V

FB

V

IO = 100mA

O

I

VO = 90%

PK

I

Q

I

VEN = 0V

SD

f

OSC

R

DS(ON)

I

VIN = 3.3V

TH

V

EH

V

EL

I

EN

T

ON

Rising

V

IN

Hysteresis 240 mV

VIN Falling

0.588 0.600 0.612 V

0.3 %/V

V

= 2.7V to 5V, IO = 10mA

IN

I

= 1mA to 1000mA

O

No Load 40 80 µA

= 100%

V

O

VFB = 0V or VO =0V

P MOSFET 0.35 0.45 Ω

N MOSFET 0.35 0.45 Ω

Output1, I

= 500mA, VIN = 3.3V

O

1.5 V

0.3 V

±0.01 µA

From EN1 to Output 2 ms

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2.7 5.5 V

2.4 2.5 V

1.8 V

-3 +3 %

1.5 A

0.2 0.5 %/V

-2 +2 %

0.1 1 µA

3 MHz

1 MHz

84 %

100 mA

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