Diodes PAM2306D User Manual

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DUAL HIGH-EFFICIENCY PWM STEP-DOWN DC-DC CONVERTER

Description

The PAM2306D is a dual step-down current mode, DC-DC converter.

At heavy load, the constant-frequency PWM control performs

excellent stability and transient response. To ensure the longest

battery life in portable applications, the PAM2306D provides a

powersaving Pulse-Skipping Modulation (PSM) mode to reduce

quiescent cur rent under light load operation.

The PAM2306D supports a range of input voltages from 2.5V to 5.5V,

allowing the use of a single Li+/Li-polymer cell, multiple Alkaline/NiMH

cell, USB, and other standard power sources. The dual output

voltages are available for adjustment. All versions employ internal

power switch and synchronous rectifier to minimize external part

count and realize high efficiency. During shutdown, the input is

disconnected from the output and the shutdown current is less than

0.1µA. Other key features include under-voltage lockout to prevent

deep battery discharge.

Features

Pin Assignments

Applications

Product Line o

Diodes Incorporated

PAM2306D

 Efficiency up to 96%  Only 40μA (Typ per Channel) Quiescent Current  Output Current: Up to 1A per Channel  Internal Synchronous Rectifier  1.5MHz Switching Frequency  Soft-Start  Under-Voltage Lockout  Short Circuit Protection  Thermal Shutdown  Small 12L WDFN3x3 Package  Pb-Free and RoHS Compliant

Typical Applications Circuit

 Cellular Phone  Portable Electronics  Personal Information Appliances  Wireless and DSL Modems  MP3 Players

1Rx







VV

1REFOUT







2Rx





PAM2306D

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Pin Descriptions

Pin Number

1 VIN2 Power Input of Channel 2.

2 LX2 Pin for Switching of Channel 2.

3, 9

Exposed Pad

4 FB1 Feedback of Channel 1.

5, 11 NC1, NC2 No Connection

6 EN1

7 VIN1 Power Input of Channel 1.

8 LX1 Pin for Switching of Channel 1.

10 FB2 Feedback of Channel 2.

12 EN2

Pin Name

WDFN3x3-12L

GND

Ground. The exposed pad must be soldered to a large PCB and connected to GND for maximum power dissipation.

Chip Enable of Channel 1 (Active High). V

Chip Enable of Channel 2 (Active High). V

Functional Block Diagram

Function

≤ V

EN1

≤ V

EN2

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Diodes Incorporated

.

IN1

.

IN2

PAM2306D

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Product Line o

Diodes Incorporated

PAM2306D

Absolute Maximum Ratings (@T

These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device reliability. All voltages are with respect to ground.

= +25°C, unless otherwise specified.)

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Parameter Rating Unit

Input Voltage -0.3 to +6.5 V

EN1, FB1, LX1, EN2, FB2 and LX2 Pin Voltage

-0.3 to (V

+0.3)

IN

V

Maximum Junction Temperature 150 °C

Storage Temperature Range -65 to +150 °C

Soldering Temperature 260, 10sec °C

Recommended Operating Conditions (@T

= +25°C, unless otherwise specified.)

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Parameter Rating Unit

Supply Voltage 2.5 to 5.5 V

Ambient Temperature Range -40 to +85 °C

Junction Temperature Range -40 to +125 °C

Thermal Information

Parameter Symbol Package Maximum Unit

Thermal Resistance (Junction to Ambient)

Thermal Resistance (Junction to Case)

Power Dissipation

θ

JA

θ

JC

P

D

W-DFN3x3-12

60 °C/W

8.5 °C/W

1.66 W

Electrical Characteristics

(@TA = +25°C, VIN = 3.6V, VO = 1.8V, CIN = 10µF, CO = 10µF, L = 2.2µH, unless otherwise specified.)

Parameter Symbol Test Conditions Min Typ Max Units

Input Voltage Range

Regulated Feedback Voltage

Reference Voltage Line Regulation

Regulated Output Voltage Accuracy

Peak Indictor Current

V

∆V

V

IN

FB

V

O

I

PK

Output Voltage Line Regulation LNR

Output Voltage Load Regulation LDR

Quiescent Current (per channel)

Shutdown Current (per channel)

Oscillator Frequency

Drain-Source On-State Resistance

SW Leakage Current (per channel)

EN Threshold High

EN Threshold Low

EN Leakage Current

f

R

DS(ON)

I

V

I

Q

I

SD

OSC

LSW

EH

EL

I

EN

Over Temperature Protection OTP 150 °C

OTP Hysteresis OTH 30 °C

PAM2306D

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2.5 5.5 V

0.588 0.6 0.612 V

0.3 %/V

I

V

= 10mA

O

= 3V, VFB = 0.5V or VO = 90%

IN

V

= 2.5V to 5V, IO = 10mA

IN

I

= 1mA to 1A

O

-3 +3 %

1.5 A

0.2 0.5 %/V

1.5 %

No load 40 70 µA

VEN = 0V

= 100%

V

O

VFB = 0V or VO = 0V

IDS = 100mA

P MOSFET 0.30 0.45 Ω N MOSFET 0.35 0.50 Ω

±0.01 1 µA

1.5 V

0.3 V

±0.01 µA

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0.1 1 µA

1.2 1.5 1.8 MHz

500 kHz

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Typical Performance Characteristics (@T

Product Line o

Diodes Incorporated

PAM2306D

= +25°C, CIN = 10µF, CO = 10µF, L = 4.7µH, unless otherwise specified.)

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PAM2306D

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