Diodes MJD350 User Manual
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Features
• Epitaxial Planar Die Construction
• High Collector-EmitterVoltage
• Ideally Suited for Automated Assembly Processes
• Ideal for Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
NEW PRODUCT
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Top View
= 25°C unless otherwise specified
A
HIGH VOLTAGE PNP SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: DPAK
• Case Material: Molded Plastic, "Green" Molding Compound. UL
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper Leadframe
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.34 grams (approximate)
COLLECTOR
BASE
EMITTER
Device Schematic
MJD350
Flammability Classification Rating 94V-0
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
3
24
1
Pin Out Configuration
V
CBO
V
CEO
V
EBO
I
C
I
CM
-300 V
-300 V
-3 V
-0.5 A
-0.75 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @TC = 25°C PD
Thermal Resistance, Junction to Case
Power Dissipation @TA = 25°C (Note 3) PD
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 4)
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with the minimum pad size recommended.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
MJD350
Document number: DS31608 Rev. 2 - 2
Characteristic Symbol Min Typ Max Unit Test Condition
A
R
R
, T
T
J
= 25°C unless otherwise specified
V
SUS)CEO
I
CBO
I
EBO
h
FE
-300
⎯ ⎯
⎯ ⎯
30
1 of 4
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JC
JA
STG
⎯ ⎯
⎯
15 W
8.33 °C/W
1.56 W
81 °C/W
-55 to +150 °C
V
I
= -1mA, IB = 0
-100
-100
240
C
μA
μA
⎯
= -300V, IE = 0
V
CB
= - 3V, IC = 0
V
EB
VCE = -10V, IC = -50mA
November 2008
© Diodes Incorporated
C
O
CTO
R
CUR
R
T
C CUR
RENT G
C
O
CTO
R
T
TER
T
T
R
T
U
RN-O
O
T
G
T
T
R
TURAT
O
N VO
T
G
NEW PRODUCT
MJD350
2.0
1.5
10
(A)
1
EN
Pw = -10ms
1.0
0.5
D
P , POWER DISSIPATI ON (W)
1,000
0.1
LLE
0.01
C
-I ,
R = 81°C/W
θ
JA
0
25 50 75 100 125 150
0
T , AMBIENT TEMPERA TURE ( C)
A
°
Fig. 1 Pow er D issipati o n
vs. Ambient Temperat ur e (Note 3)
T = 150°C
A
0.001
0.1 1 10 100 1,000
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
1
I/I = 10
CB
Pw = -100ms
DC
AIN
100
FE
h, D
10
T = 25°C
A
T = -55°C
A
V = -10V
CE
T = 85°C
A
1
0.1 1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Co ll ector Cur r ent
C
1.2
E (V)
A
1.0
L
V = -10V
CE
-EMI
VOLTAGE ( V)
0.1
LLE
SATURATION
CE(SAT)
-V ,
0.01
0.1 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
C
vs. Collector Current
1.2
E (V)
A
1.0
L
I = 10
/I
CB
T = 150°C
A
T = 85°C
A
T = -55°C
A
T = 25°C
A
N V
0.8
T = -55°C
A
0.6
E
T = 25°C
A
0.4
T = 85°C
A
0.2
T = 150°C
A
BE(ON)
0
-V , BASE-EMI
0.1 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collecto r Cu r re nt
0.8
I
T = -55°C
A
0.6
SA
T = 25°C
A
E
0.4
T = 85°C
A
0.2
T = 150°C
A
0
0.1 1 10 100 1,000
BE(SAT)
-V , BASE-EMI
-I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
MJD350
Document number: DS31608 Rev. 2 - 2
2 of 4
www.diodes.com
November 2008
© Diodes Incorporated
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