Diodes MJD32C User Manual
Features
BV
I
I
Ideal for Power Switching or Amplification Applications
Complementary NPN Type: MJD31C
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
> -100V
CEO
= -3A high Continuous Collector Current
C
= -5A Peak Pulse Current
CM
TO252 (DPAK)
Top View
B
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, "Green" Molding Compound
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
Weight: 0.34 grams (approximate)
C
E
Device Schematic
MJD32C
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252
UL Flammability Classification Rating 94V-0
MIL-STD-202, Method 208
Pin Out Configuration
Top view
Ordering Information (Note 4)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
MJD32C-13 AEC-Q101 MJD32C 13 16 2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green"
and Lead-Free.
<1000ppm antimony compounds.
Marking Information
MJD32C = Product Type Marking Code
= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 10 = 2010)
WW = Week Code (01 - 53)
MJD32C
Document number: DS31624 Rev. 6 - 2
1 of 7
www.diodes.com
March 2014
© Diodes Incorporated
Absolute Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
(Note 5)
Power Dissipation
(Note 6) 2.1
(Note 7) 1.6
(Note 8) 15
(Note 5)
Thermal Resistance, Junction to Ambient Air
(Note 6) 59
(Note 7) 80
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range
ESD Ratings (Note 9)
MJD32C
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
R
θJA
R
θJL
T
, T
J
STG
-100 V
-100 V
-6 V
-3 A
-5 A
-1 A
3.9
W
32
C/W
8.4
-55 to +150
C
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 5. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
7. Same as note (5), except mounted on minimum recommended pad (MRP) layout.
under still air conditions whilst operating in a steady-state.
6. Same as note (5), except mounted on 25mm x 25mm 1oz copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MJD32C
Document number: DS31624 Rev. 6 - 2
2 of 7
www.diodes.com
March 2014
© Diodes Incorporated
Thermal Characteristics
10
V
CE(sat)
Limited
DC
1
100m
Collector Current (A)
C
10m
-I
100m 1 10 100
1s
100ms
Single Pulse
T
=25°C
amb
10ms
1ms
-VCE Collector-Emitter Voltage (V)
Safe Operating Area
T
=25°C
AMB
80
Minimum Copper
60
D=0.5
40
D=0.2
20
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
Pulse Width (s)
Transient Thermal Impedance
100µs
D=0.1
Single Pulse
D=0.05
10
V
CE(sat)
Limited
1
0.1
Single Pulse
Collector Current (A)
C
0.01
-I
T
CASE
0.1 1 10 100
DC
100ms
10ms
1ms
100s
=25°C
-VCE Collector-Emitter Voltage (V)
Safe Operating Area
8
6
D=0.5
4
2
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
D=0.2
D=0.1
D=0.05
Single Pulse
T
CASE
Pulse Width (s)
Transient Thermal Impedance
MJD32C
=25°C
MJD32C
Document number: DS31624 Rev. 6 - 2
3 of 7
www.diodes.com
March 2014
© Diodes Incorporated
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