DIODES MBRM760 Datasheet

MBRM760

S

7A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

POWERMITEÒ3

Features

· Guard Ring Die Construction for

TCUDORPWEN

Transient Protection

· Low Power Loss, High Efficiency

· High Surge Capability

· Low Reverse Current

· For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity
Protection Applications

· Plastic Material: UL Flammability
Classification Rating 94V-0

Mechanical Data

· Case: POWERMITEâ3, Molded Plastic

· Terminals: Solderable per MIL-STD-202,

Method 208

· Moisture sensitivity: Level 1 per J-STD-020A

· Polarity: See Diagram

· Marking: Type Number

· Weight: 0.072 grams (approx.)

Maximum Ratings

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current (See also figure 4)

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method) @ T

Typical Thermal Resistance Junction to Soldering Point

Operating Temperature Range

Storage Temperature Range

@ TA = 25°C unless otherwise specified

Characteristic Symbol

UNDER DEVELOPMENT

E

B

M

= 55°C

C

A

P

3

12

D

RRM
RWM

V

R

I

O

FSM

qJS

T

STG

C

j

C

PIN 1

PIN 2

Note: Pins 1 & 2 must be electrically

connected at the printed circuit board.

V
V

V

R(RMS)

I

R

T

G

H

J

K

L

PIN 3, BOTTOMSIDE
HEAT

INK

All Dimensions in mm

Value

60 V

42 V

7A

100 A

2.5 °C/W

-65 to +125 °C

-65 to +150 °C

POWERMITEâ3

A

B

C

D

E

G

H

J

K

L

M

P

Min Max

4.03 4.09

6.40 6.61

.889 NOM

1.83 NOM

1.10 1.14

.178 NOM

5.01 5.17

4.37 4.43

.178 NOM

.71 .77

.36 .46

1.73 1.83

Dim

Unit

Electrical Characteristics

Characteristic Symbol

Reverse Breakdown Voltage (Note 1)

Forward Voltage (Note 1)

Reverse Current (Note 1)

Total Capacitance

Notes: 1. Short duration test pulse used to minimize self-heating effect.

@ TA = 25°C unless otherwise specified

Min Typ Max Unit

V

(BR)R

V

F

I

R

C

T

60 ¾¾V

¾
¾
¾
¾

¾
¾

¾ 375 ¾ pF

0.49

0.38

0.57

0.46

5

10

0.52

¾

0.60

¾

200

20

Test Condition

IR = 0.5mA

I

= 3.5A, Tj = 25°C

F

= 3.5A, Tj = 125°C

I

F

V

I

= 7A, Tj = 25°C

F

I

= 7A, Tj = 125°C

F

mAmATj = 25°C, VR = 60V

= 125°C, VR = 60V

T

j

f = 1.0MHz, V

= 4.0V DC

R

DS30357 Rev. 2 - 1 1 of 3 MBRM760

www.diodes.com

100

100m

O

O

TCUDORPWEN

10

T = 125° C

j

1

T=25°C

j

T = 100° C

j

0.1

R

I , INSTANTANEOUS FORWARD CURRENT (A)

0.01

0

V , INSTANTANEOUS FORWARD VOLTAGE (mV)

F

200 400

600

Fig.1 Typical Forward Characteristics

10,000

800

f = 1MHz

US REVERSE CURRENT (A)

R

I , INSTANTANE

10m

T = 125°C

j

1m

T=100° C

j

T=25° C

j

020 4060

10 30 50

V , INSTANTANEOUS REVERSE VOLTAGE (V)

R

Fig. 2 Typical Reverse Characteristics

1000

TAL CAPACITANCE (pF)

t

C, T

100

0

15

V , REVERSE VOLTAGE (V)

R

30

45

60

Fig. 3 Typical Capacitance vs. Reverse Voltage

UNDER DEVELOPMENT

DS30357 Rev. 2 - 1 2 of 3 MBRM760

www.diodes.com