1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
Preliminary Datasheet
General Description
The AP2115 is CMOS process low dropout linear
regulator with enable function, the regulator delivers
a guaranteed 1A (min.) continuous load current.
The AP2115 features low power consumption.
The AP2115 is available in 1.2V, 1.8V, 2.5V and
3.3V regulator output, and available in excellent
output accuracy ±1.5%, it is also available in an
excellent load regulation and line regulation
performance.
The AP2115 is available in standard packages of
SOIC-8 and SOT-89-5.
Features
• Output Voltage Accuracy: ±1.5%
• Output Current: 1A (Min.)
• Fold-back Short Current Protection: 50mA
• Low Dropout Voltage (3.3V): 450mV (Typ.)
@ I
• Stable with 4.7µF Flexible Cap: Ceramic,
• Excellent Line Regulation: 0.02%/V (Typ.),
• Excellent Load Regulation: 0.2%/A @
• Low Quiescent Current: 60µA (1.2V/1.8V/
• Low Output Noise: 30µV
• PSRR: 68dB @ Freq=1kHz (1.2V/1.8V)
• OTSD Protection
• Operation Temperature Range: -40°C to 85°C
• ESD: MM 400V, HBM 4000V
=1A
OUT
Tantalum and Aluminum Electrolytic
0.1%/V (Max.) @ I
I
=1mA to 1A
OUT
2.5V)
OUT
=30mA
RMS
Applications
• LCD Monitor
• LCD TV
• STB
SOIC-8 SOT-89-5
Figure 1. Package Types of AP2115
Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
Pin Configuration
R5 Package
（SOT-89-5）
R5 R5A
VOUT VIN
45
123
NC GND EN
M Package
（SOIC-8）
Figure 2. Pin Configuration of AP2115 (Top View)
Pin Descriptions
Pin No.
SOT-89-5 SOIC-8
1 2, 3, 4 NC/EN No connection/Chip Enable
2 6, 7 GND GND
3 5 EN/NC
4 8 VIN Input Voltage
5 1 VOUT Output Voltage
Name Function
Chip Enable, H – normal work, L – shutdown output/ No
Connection
Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
Functional Block Diagram
Figure 3. Functional Block Diagram of AP2115
Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
Ordering Information
AP2115 -
G1: Green
Circuit Type
Package
Blank: Tube
M: SOIC-8
R5: SOT-89-5
Package
SOIC-8
SOT-89-5
SOT-89-5
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and green.
Temperature
Range
-40 to 85°C
-40 to 85°C
-40 to 85°C
Condition Part Number Marking ID
1.2V
1.8V
2.5V
3.3V
1.2V (R5) AP2115R5-1.2TRG1 G22G Tape & Reel
1.8V (R5) AP2115R5-1.8TRG1 G22H Tape & Reel
2.5V (R5) AP2115R5-2.5TRG1 G37H Tape & Reel
3.3V (R5) AP2115R5-3.3TRG1 G41H Tape & Reel
1.2V (R5A) AP2115R5A-1.2TRG1 G27D Tape & Reel
1.8V (R5A) AP2115R5A-1.8TRG1 G27G Tape & Reel
2.5V (R5A) AP2115R5A-2.5TRG1 G41F Tape & Reel
3.3V (R5A) AP2115R5A-3.3TRG1 G41G Tape & Reel
AP2115M-1.2G1 2115M-1.2G1 Tube
AP2115M-1.2TRG1 2115M-1.2G1 Tape & Reel
AP2115M-1.8G1 2115M-1.8G1 Tube
AP2115M-1.8TRG1 2115M-1.8G1 Tape & Reel
AP2115M-2.5G1 2115M-2.5G1 Tube
AP2115M-2.5TRG1 2115M-2.5G1 Tape & Reel
AP2115M-3.3G1 2115M-3.3G1 Tube
AP2115M-3.3TRG1 2115M-3.3G1 Tape & Reel
TR: Tape & Reel
1.2V: Fixed Output 1.2V
1.8V: Fixed Output 1.8V
2.5V: Fixed Output 2.5V
3.3V: Fixed Out
ut 3.3V
Packing
Type
Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Power Supply Voltage VCC 6.5 V
Operating Junction Temperature
Range
Storage temperature Range T
Lead Temperature (Soldering,10
Seconds)
ESD (Machine Model)
ESD (Human Body Model) 4000 V
150 ºC
T
J
-65 to 150 ºC
STG
260 ºC
T
LEAD
400 V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter Symbol Min Max Unit
Supply Voltage VIN 2.5 6.0 V
Ambient Operation Temperature
Range
-40 85 °C
T
A
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Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
Electrical Characteristics
AP2115-1.2 Electrical Characteristics (Note 2)
VIN=2.5V, CIN=4.7µF (Ceramic), C
ranges, unless otherwise specified (Note 3).
Parameter Symbol Test Conditions Min Typ Max Unit
=4.7µF (Ceramic), Typical T
OUT
=25°C, Bold typeface applies over -40°C≤T
A
≤85°C
J
Output Voltage V
Input Voltage VIN
Maximum Output Current I
Load Regulation
Line Regulation
Dropout Voltage V
Quiescent Current IQ V
Power Supply Rejectio
Ratio
Output Voltage
△V
Temperature Coefficient
Short Current Limit I
RMS Output Noise V
OUT
OUT(MAX)
△V
OUT/VOUT
△I
△V
OUT/VOUT
△V
DROP
PSRR
OUT/VOUT
△T
SHORT
NOISE
OUT
V
=2.5V, 1mA ≤ I
IN
VIN=2.5V, V
V
=2.5V, 1mA ≤ I
IN
I
IN
2.5V≤V
IN
=1.0A 1200 1300 mV
OUT
=2.5V, I
IN
Ripple 1Vp-p
=2.5V,
V
IN
=100mA
I
OUT
I
=30mA, TA =-40°C to 85°C
OUT
V
=0V 50 mA
OUT
10Hz ≤ f ≤100kHz (No Load) 30
OUT
≤ 30mA
OUT
×98.5%
1.2
V
6 V
=1.182V to 1.218V 1 A
OUT
≤1A 0.2 1 %/A
OUT
≤6V, I
=30mA -0.1 0.02 0.1 %/V
OUT
=0mA 60 75
OUT
f=100Hz 68
f=1KHz 68
±30 ppm/°C
V
OUT
×101.5%
VEN High Voltage VIH Enable logic high, regulator on 1.5
VEN Low Voltage VIL Enable logic low, regulator off 0.4
V
µA
dB
µV
RMS
V
Standby Current I
Start-up Time t
EN Pull Down Resistor RPD 3.0
V
Discharge Resistor R
OUT
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
V
STD
S
Set EN pin at Low 60
DCHG
T
160
OTSD
T
25
HYOTSD
=3.5V, VEN in OFF mode 0.01 1.0
IN
o Load 20
µA
µs
MΩ
Ω
°C
SOIC-8 74.6
Thermal Resistance
θ
JC
°C/W
SOT-89-5 47
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at T
Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited
=25°C. Over temperature specifications guaranteed by design only.
A
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Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
Electrical Characteristics (Continued)
AP2115-1.8 Electrical Characteristics (Note 2)
VIN=2.8V, CIN=4.7µF (Ceramic), C
ranges, unless otherwise specified (Note 3).
Parameter Symbol Test Conditions Min Typ Max Unit
=4.7µF (Ceramic), Typical T
OUT
=25°C, Bold typeface applies over -40°C≤T
A
≤85°C
J
Output Voltage V
Maximum Output Current I
Load Regulation
Line Regulation
Dropout Voltage V
Quiescent Current IQ V
Power Supply Rejection
Ratio
Output Voltage
△V
Temperature Coefficient
Short Current Limit I
RMS Output Noise V
OUT
OUT(MAX)
△V
OUT/VOUT
△I
△V
OUT/VOUT
△V
DROP
PSRR
OUT/VOUT
△T
SHORT
NOISE
OUT
IN
V
=2.8V, 1mA ≤ I
IN
VIN=2.8V, V
=2.8V, 1mA ≤ I
V
I
IN
2.8V≤V
IN
=1.0A 500 750 mV
OUT
=2.8V, I
IN
Ripple 1Vp-p
=2.8V,
V
IN
I
=100mA
OUT
I
=30mA, TA =-40°C to 85°C
OUT
V
=0V 50 mA
OUT
10Hz ≤ f ≤100kHz (No load) 30
≤ 30mA
OUT
=1.773V to 1.827V 1 A
OUT
≤1A 0.2 1 %/A
OUT
≤6V, I
=30mA -0.1 0.02 0.1 %/V
OUT
=0mA 60 75
OUT
98.5%
×V
f=100Hz 68
f=1KHz 68
1.8 101.5%
OUT
× V
±30 ppm/°C
VEN High Voltage VIH Enable logic high, regulator on 1.5
VEN Low Voltage VIL Enable logic low, regulator off 0.4
Standby Current I
V
STD
=3.5V, VEN in OFF mode 0.01 1.0
IN
OUT
V
µA
dB
µV
RMS
V
µA
Start-up Time t
S
EN Pull Down Resistor RPD 3.0
V
Discharge Resistor R
OUT
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
Set EN pin at Low 60
DCHG
160
T
OTSD
T
HYOTSD
o Load 20
µs
MΩ
Ω
°C
25
SOIC-8 74.6
Thermal Resistance
θ
JC
°C/W
SOT-89-5 47
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at T
=25°C. Over temperature specifications guaranteed by design only.
A
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Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
Electrical Characteristics (Continued)
AP2115-2.5 Electrical Characteristics (Note 2)
VIN=3.5V, CIN=4.7µF (Ceramic), C
ranges, unless otherwise specified (Note 3).
Parameter Symbol Test Conditions Min Typ Max Unit
=4.7µF (Ceramic), Typical T
OUT
=25°C, Bold typeface applies over -40
A
O
C≤TJ≤85OC
Output Voltage V
Maximum Output Current I
Load Regulation
Line Regulation
△V
△V
Dropout Voltage V
Quiescent Current IQ V
Standby Current I
Power Supply Rejectio
Ratio
Output Voltage
△V
Temperature Coefficient
Short Current Limit I
RMS Output Noise V
V
OUT
OUT(MAX)
OUT/VOUT
OUT/VOUT
VIN=3.5V, V
I△
OUT
V△
IN
I
DROP
V
STD
=3.5V, 1mA ≤ I
IN
=2.5V, VIN=V
V
OUT
1mA ≤ I
OUT
3.5V≤VIN≤6V, I
=1A 450 750 mV
OUT
=3.5V, I
IN
=3.5V, VEN in OFF mode 0.01 1.0
IN
Ripple 1Vp-p
PSRR
OUT/VOUT
T△
SHORT
NOISE
V
=3.5V,
IN
=100mA
I
OUT
I
=30mA ±30 ppm/°C
OUT
V
=0V 50 mA
OUT
10Hz ≤ f ≤100kHz 30
≤ 30mA
OUT
=2.463V to 2.537V 1 A
OUT
+1V
OUT
≤1A
=30mA -0.1 0.02 0.1 %/V
OUT
=0mA 60 80
OUT
98.5%
×V
OUT
0.2 1 %/A
f=100Hz 65
f=1KHz 65
2.5 101.5%
×V
OUT
VEN High Voltage VIH Enable logic high, regulator on 1.5
VEN Low Voltage VIL Enable logic low, regulator off 0.4
V
µA
µA
dB
µV
RMS
V
Start-up Time tS
EN Pull Down Resistor RPD 3.0
V
Discharge Resistor R
OUT
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
Set EN pin at Low 60
DCHG
T
160
OTSD
25
T
HYOTSD
o Load 20
µs
MΩ
Ω
°C
SOIC-8 74.6
Thermal Resistance
θ
JC
°C/W
SOT-89-5 47
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at T
=25°C. Over temperature specifications guaranteed by design only.
A
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Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
Electrical Characteristics (Continued)
AP2115-3.3 Electrical Characteristics (Note 2)
VIN=4.3V, CIN=4.7µF (Ceramic), C
ranges, unless otherwise specified (Note 3).
Parameter Symbol Test Conditions Min Typ Max Unit
=4.7µF (Ceramic), Typical T
OUT
=25°C, Bold typeface applies over -40
A
O
C≤TJ≤85OC
Output Voltage V
Maximum Output Current I
Load Regulation
Line Regulation
△V
△V
Dropout Voltage V
Quiescent Current IQ V
Power Supply Rejectio
Ratio
Output Voltage
△V
Temperature Coefficient
Short Current Limit I
RMS Output Noise V
V
OUT
OUT(MAX)
VIN =4.3V, V
OUT/VOUT
I△
OUT
OUT/VOUT
V△
IN
I
DROP
=4.3V, 1mA ≤ I
IN
=4.3V, 1mA ≤ I
V
IN
4.3V≤V
IN
=1A 450 750 mV
OUT
=4.3V, I
IN
Ripple 1Vp-p
PSRR
OUT/VOUT
△T
V
SHORT
10Hz ≤ f ≤100kHz (No load) 30
NOISE
=4.3V,
V
IN
=100mA
I
OUT
I
=30mA ±30 ppm/°C
OUT
=0V 50 mA
OUT
≤ 30mA
OUT
=3.25V to 3.35V 1 A
OUT
≤1A 0.2 1 %/A
OUT
≤6V, I
=30mA -0.1 0.02 0.1 %/V
OUT
=0mA 65 90
OUT
98.5%
×V
f=100Hz 65
f=1KHz 65
OUT
3.3 101.5%
×V
OUT
VEN High Voltage VIH Enable logic high, regulator on 1.5
VEN Low Voltage VIL Enable logic low, regulator off 0.4
Standby Current I
Start-up Time t
EN Pull Down Resistor
V
Discharge Resistor
OUT
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
V
STD
S
3.0
R
PD
R
Set EN pin at Low 60
DCHG
160
T
OTSD
T
25
HYOTSD
=3.5V, VEN in OFF mode 0.01 1.0
IN
o Load
20
SOIC-8 74.6
Thermal Resistance
θ
JC
SOT-89-5 47
V
µA
dB
µV
V
µA
µs
MΩ
Ω
°C
°C/W
RMS
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at T
=25°C. Over temperature specifications guaranteed by design only.
A
Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
Typical Performance Characteristics
500
AP2115_1.2V
450
400
350
300
250
200
Ground Current (µA)
150
100
50
0
0.0 0.2 0.4 0.6 0.8 1.0
Output Current (A)
VIN=2.5V
TA=-40OC
TA=25OC
TA=85OC
500.0
450.0
400.0
350.0
300.0
250.0
200.0
Ground Current (µA)
150.0
100.0
50.0
0.0
0.00.20.40.60.81.0
Output Current (A)
AP2115_3.3V
VIN=4.3V
Figure 4. Ground Current vs. Output Current
100
90
80
70
60
Quiescent Current (µA)
50
40
30
-40.0 -20.0 0.0 20.0 40.0 60.0 80.0
Temperature (OC)
AP2115_1.2V
VIN=2.5V
I
=0mA
OUT
Figure 6. Quiescent Current vs. Temperature Figure 7. Quiescent Current vs. Temperature
Figure 5. Ground Current vs. Output Current
100
90
80
70
60
Quiescent Current (µA)
50
40
30
-40.0 -20.0 0.0 20.0 40.0 60.0 80.0
Temperature (OC)
AP2115_3.3V
VIN=4.3V
I
OUT
TA=-40OC
TA=25OC
TA=85OC
=0mA
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100
Q
i
t
C
t
(
A)
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
Typical Performance Characteristics (Continued)
90
80
70
60
50
40
Quiescent Current (µA)
30
20
10
23456
Input Voltage (V)
Figure 8. Quiescent Current vs. Input Voltage Figure 9. Quiescent Current vs. Input Voltage
1.216
1.212
1.208
1.204
1.200
1.196
Output Voltage (V)
1.192
1.188
1.184
1.180
-40-200 20406080
Temperature (oC)
Figure 10. Output Voltage vs. Temperature Figure 11. Output Voltage vs. Temperature
AP2115_1.2V
=0mA
I
OUT
TA= -40oC
TA= 25oC
TA= 85oC
AP2115_1.2V
VIN=2.5V
IO=10mA
IO=100mA
IO=500mA
IO=1000mA
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110
100
90
µ
80
urren
70
60
escen
u
50
40
30
3.5 4.0 4.5 5.0 5.5 6.0
Input Voltage (V)
3.35
3.34
3.33
3.32
3.31
3.30
3.29
Output Voltage (V)
3.28
3.27
3.26
3.25
-40-200 20406080
Temperature (oC)
AP2115_3.3V
I
=0mA
OUT
TA= -40oC
TA= 25oC
TA= 85oC
AP2115_3.3V
VIN=4.3V
IO=10mA
IO=100mA
IO=500mA
IO=1000mA
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
Typical Performance Characteristics (Continued)
1.6
1.4
1.2
1.0
0.8
0.6
Output Voltage (V)
0.4
0.2
0.0
123456
Input Voltage (V)
AP2115_1.2V
TA=-40oC
TA=25oC
TA=85oC
CIN=4.7µF
C
=4.7µF
OUT
=10mA
I
OUT
4.0
3.5
3.0
2.5
2.0
1.5
Output Voltage (V)
1.0
0.5
0.0
0.51.01.52.02.53.03.54.04.55.05.56.0
Input Voltage (V)
AP2115_3.3V
CIN=4.7µF
C
I
OUT
TA=-40oC
TA=25oC
TA=85oC
=4.7µF
OUT
=10mA
Figure 12. Output Voltage vs. Input Voltage Figure 13. Output Voltage vs. Input Voltage
1.210
1.205
1.200
1.195
1.190
1.185
1.180
1.175
Output Voltage (V)
1.170
1.165
1.160
1.155
1.150
0.0 0.2 0.4 0.6 0.8 1.0
Output Current (A)
AP2115_1.2V
VIN=2.5V
TA=-40oC
TA=25oC
TA=85oC
3.35
3.34
3.33
3.32
3.31
3.30
Output Voltage (V)
3.29
3.28
3.27
0.0 0.2 0.4 0.6 0.8 1.0
Output Current (A)
AP2115_3.3V
VIN=4.3V
Figure 14. Output Voltage vs. Output Current Figure 15. Output Voltage vs. Output Current
TA=-40oC
TA=25oC
TA=85oC
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Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
Typical Performance Characteristics (Continued)
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
Output Voltage (V)
0.4
0.3
0.2
0.1
0.0
0.00.20.40.60.81.01.21.4
Output Current (A)
AP2115_1.2V
TA=25oC
=4.7µF
C
IN
C
OUT
VIN=2.5V
VIN=3.3V
=4.7µF
3.5
3.0
2.5
2.0
1.5
Output Voltage (V)
1.0
0.5
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Output Current (A)
AP2115_3.3V
VIN=4.3V
VIN=5V
TA=25OC
=4.7µF
C
IN
=4.7µF
C
OUT
Figure 16. Output Voltage vs. Output Current Figure 17. Output Voltage vs. Output Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Maximum Output Current (A)
0.2
0.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.
Input Voltage (V)
AP2115_1.2V
CIN=4.7µF
C
=4.7µF
OUT
T
=25oC
A
Figure 18. Maximum Output Current vs. Input Voltage Figure 19. Maximum Output Current vs. Input Voltage
Maximum Output Current (A)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4.0 4.5 5.0 5.5 6.0
Input Voltage (V)
AP2115_3.3V
CIN=4.7µF
=4.7µF
C
OUT
T
=25oC
A
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Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
Typical Performance Characteristics (Continued)
0.60
Dropout Voltage (V)
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
AP2115_3.3V
CIN=4.7µF
C
OUT
0.0 0.2 0.4 0.6 0.8 1.0
=4.7µF
TA=-40oC
TA=25oC
TA=85oC
Output Current (A)
0.10
0.09
0.08
0.07
0.06
0.05
Output Short Current (A)
0.04
0.03
-40-200 20406080
Temperature (oC)
AP2115_1.2V
VIN=2.5V
Figure 20. Dropout Voltage vs. Output Current Figure 21. Output Short Current vs. Temperature
0.10
0.09
0.08
0.07
0.06
AP2115_3.3V
VIN=4.3V
0.05
Output Short Current (A)
0.04
0.03
-40-200 20406080
Temperature (oC)
Figure 22. Output Short Current vs. Temperature Figure 23. PSRR vs. Frequency
Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited
14
80
70
60
50
40
PSRR (dB)
30
20
10
AP2115_1.2V
TA=25oC
C
=1µF
IN
=4.7µF
C
OUT
=10mA
I
OUT
Ripple=1Vpp
0
100 1k 10k 100k
Frequency (Hz)
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
Typical Performance Characteristics (Continued)
80
PSRR (dB)
70
60
50
40
30
20
10
0
AP2115_3.3V
100 1k 10k 100k
Frequency (Hz)
TA=25oC
C
IN
C
OUT
Ripple=1Vp-p
I
=10mA
OUT
I
=100mA
OUT
=1µF
=4.7µF
I
OUT
500mA/div
V
OUTAC
50mV/div
Figure 24. PSRR vs. Frequency Figure 25. Load Transient
1A
0A
CIN=4.7µF
C
=4.7µF
OUT
Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited
15
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
T ypical Application
VOUT
VIN
CIN
4.7
ON
F
VEN
AP2115
GND
OFF
COUT
4.7
1.2V/1.8V/
2.5V/3.3V
F
Figure 26. AP21 15 Typical Application
Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited
16
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
Mechanical Dimensions
SOIC-8 Unit: mm(inch)
R0.150(0.006)
Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited
17
Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
Mechanical Dimensions (Continued)
SOT-89-5 Unit: mm(inch)
1.030(0.041)REF
0.900(0.035)
1.100(0.043)
2.300(0.091)
2.600(0.102)
3
1.400(0.055)
1.600(0.063)
2.060(0.081)REF
10
0.350(0.014)
0.450(0.018)
1.550(0.061)REF
3.950(0.156)
4.250(0.167)
0.900(0.035)
1.100(0.043)
0.320(0.013)
0.520(0.020)
4.400(0.173)
4.600(0.181)
0.480(0.019)
3.000(0.118)
TYP
45
0.320(0.013)
0.520(0.020)
1.500(0.059)
1.800(0.071)
0.320(0.013)REF
3
2.210(0.087)REF
R0.150(0.006)
10
1.620(0.064)REF
Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited
18
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
other rights nor the rights of others.
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China
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Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
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