Delta Downstream Intelligent GE-PON ONU Transceiver OPEP-33-A4Q1RI Specification Sheet

OPEP-33-A4Q1RI

DELTA ELECTRONICS, INC.

1 Revision: S3

12/20/2007

www.deltaww.com

1.25Gbps Upstream/1.25Gbps Downstream
Intelligent GE-PON ONU Transceiver

FEATURES

z RoHS compliant

z Digital Diagnostic SFF-8472 MSA compliant

z Support extended operating Case

temperature from -20ºC to +85ºC

z IEEE802.3ah Gigabit Ethernet compliant

z SFF package with SC Receptacle

z 1310nm Burst Mode 1.25Gbps transmitter,

and 1490nm Continuous Mode 1.25Gbps
receiver

z Integrated with WDM filter to cut 1550nm and

1650nm optical signal off

z Single +3.3V power supply with LVPECL

electrical signal interface, LVTTL Bias
Control input and Rx Signal Detect output

z Laser Class 1 Product which comply with the

requirements of IEC 60825-1 and IEC 60825-2

Description

DELTA’s GE-PON ONU transceiver

OPEP-33-A4Q1RI is designed for Gigabit Ethernet

Passive Optical Network transmission.

The module is contained in a SFF package

with standard SC receptacle connector.

The module consists 1310nm FP laser,

InGaAs PIN, Preamplifier and WDM filter in a

high-integrated optical sub-assembly, and it

receives up to 1.25Gbps of continuous data at

1490nm, and transmits 1.25Gbps of burst-mode

data at 1310nm.

Application

z IEEE 802.3ah 1000BASE-PX10-U

z GE-PON ONU

z Burst Mode Application

z FTTx WDM Broadband Access

z OPEP-33-A4Q1RI data link up to 10km in

9/125um single mode fiber.

OPEP-33-A4Q1RI

DELTA ELECTRONICS, INC.

2 Revision: S3

12/20/2007

www.deltaww.com

1. Absolute Maximum Ratings

Parameter Symbol Min. Typ. Max. Unit Note

Storage Temperature Ts -40 85 ºC
Storage Ambient Humidity HA 5 95 %
Power Supply Voltage VCC -0.3 4 V
Signal Input Voltage -0.3 Vcc+0.3 V
Receiver Damage Threshold +2 dBm
Lead Soldering Temperature T

SOLD

260 ºC

Lead Soldering Time t

SOLD

10 sec

2. Recommended Operating Conditions

Parameter Symbol Min. Typ. Max. Unit Note

Operating Case Temperature TC -20 +85 ºC Note (1)
Ambient Humidity HA 5 85 %

Non-condensing

Power Supply Voltage VCC 3.13 3.3 3.47 V
Power Supply Current ICC 300 mA
Power Supply Noise Rejection 100 mVp-p

100Hz to 1MHz

Data Rate

1.25

-100ppm

1.25

1.25

+100ppm

Gbps

Transmission Distance 10 km

Note (1). Measured on topside of case front center

.

3. Specification of Transmitter

Parameter Symbol Min. Typ. Max. Unit Note

Average Launched Power (B.O.L) PO

-0.5 +4

dBm Note (1)

Average Launched Power (E.O.L) PO

-1 +4.5

dBm Note (1)

Launched power (Peak.) PP

+7.5

dBm

Extinction Ratio ER

9

dB

Center Wavelength

λ

C

1260 1310 1360 nm FP Laser

Spectrum Width (RMS)

σ

Compliant with IEEE 802.3ah

nm Note (4)

Transmitter OFF Output Power P

Off

-45

dBm
Laser Burst On Time Ton 32
Laser Burst Off Time Toff 32
Optical Rise/Fall Time tr/tf 260 ps Note (2)
Total Jitter tJ 128 ps Note (3)
Optical Return Loss Tolerance ORLT 15 dB
Relative Intensity Noise RIN15OMA -113 dB/Hz
Optical Transmitter Reflectance -6 dB
Transmitter and Dispersion Penalty TDP 2.8 dB
Output Eye Mask

{X1,X2,Y1,Y2,Y3}

Compliant with IEEE 802.3ah

{0.22,0.375,0.20,0.20,0.30}

Note (5)

Note (1). Launched power (avg.) is power coupled into a single mode fiber with master connector.

B.O.L=Before of Life; E.O.L= End of Life

Note (2). These are unfiltered 20-80% values.

Note (3). Measure at 2

7

-1 NRZ PRBS pattern

OPEP-33-A4Q1RI

DELTA ELECTRONICS, INC.

3 Revision: S3

12/20/2007

www.deltaww.com

Note (4). Transmitter spectral limits

Note (5). Transmitter eye mask definition

4. Specification of Receiver

Parameter Symbol Min. Typ. Max. Unit Note

Input Optical Wavelength

λ

IN

1480 1490 1500 nm PIN-PD

Receiver Sensitivity PIN

-26

dBm Note (1)
Input Saturation Power (Overload) P

SAT

-3 dBm
Signal Detect -Assert Power PA - -26 dBm
Signal Detect -Deassert Power PD -44 dBm Note (2)
Signal Detect Hysteresis PA-PD 0.5 2 6 dB
Data Output Rise/Fall time tr/tf 260 ps Note (3)
Receiver

Reflectance

1480 to 1500nm -12 dB Note (4)

1260 to 1360nm -43 dB
1550 to 1560nm -33 dB

Optical Isolation
from External
Source

1640 to 1665nm -33 dB

Center Wavelength

RMS spectral width(max)

1000Base-PX10-U

nm nm
1260 2.09
1270 2.52
1280 3.13
1290
1295
1297
1329
1331
1340

3.50

1350 3.06
1360 2.58

Transmitter Spectral Limits

0

1

2

3

4

1240 1260 1280 1300 1320 1340 1360 1380

Center Wavelength (nm)

RMS (nm)

1

X1 X2

1- X2

1- X1

1+ Y 3

1

1- Y1

0.5

Y1

0

- Y2

N

ormalized Time

Normalized Amplitude

OPEP-33-A4Q1RI

DELTA ELECTRONICS, INC.

4 Revision: S3

12/20/2007

www.deltaww.com

Note (1). Measured with Light source +1dBm, 1490nm, ER=9dB; BER =<10

-12

@PRBS=27-1 NRZ

This assurance should be met with asynchronous data flowing out of the optical transmitter of

the system under test. The output data pattern from the transmitter of the system under test is a

repetition of alternate 0/1 pattern as defined for this measurement.

Note (2). When SD deasserted, the data output is Low-level (fixed)

Note (3). These are 20%~80% values.

Note (4). Measured at wavelength of 1490nm.

5. Electrical Interface Characteristics

Parameter Symbol Min. Typ. Max. Unit Note

Transmitter
Total Supply Current ICC A mA Note (1)
Differential line input Impedance RIN 80 100 120 Ohm
Differential Data Input Swing VDT 200 1600 mV

p-p

Data Input Voltage- High VIH-VCC -1.165 -0.880 V
Data Input Voltage- Low VIL-VCC -1.810 -1.475 V

LVPECL

BiasCNT Input Voltage- High V

BCH

2 Vcc V

BiasCNT Input Voltage- Low V

BCL

0 0.8 V

LVTTL

Receiver
Total Supply Current ICC B mA Note (1)
Differential Data Output Swing VDR 400 1600 mV

p-p

Note (2)

Signal Detect Output Voltage-High V

LOSH

2 Vcc+0.3 V

Signal Detect Output Voltage-Low V

LOSL

0 0.8 V

LVTTL

Note (1). A (TX)+ B (RX) = 300mA (Not include termination circuit)

Note (2). Internally AC coupled, but requires a 100Ohm differential termination at or internal to Serializer/

Deserializer.

OPEP-33-A4Q1RI

DELTA ELECTRONICS, INC.

5 Revision: S3

12/20/2007

www.deltaww.com

6. Transmitter Burst Mode Timing Characteristics

Parameter Symbol Min. Typ. Max. Unit Note

BiasCNT Enable Duration 1 us
Interval of BiasCNT Signal 0.112 1000000 us

VccT BiasCNT Data Input Optical Output

VccT < 3.1V X X OFF

Low X OFF

Floating

Other

VccT > 3.1V

High

Present

Laser bias and modulation signal output

X = Don’t care

Other = Less than +7.5dBm (peak)

High = Logic high level, Low = logic low level
Floating = No Data Input, Present = Data Input,

OFF = Optical Power is less than –45dBm

BiasCNT

Optical Output

Within 15% of steady state

Ton Toff

Data Input

L

H

7. Digital Diagnostic Monitor Accuracy

Parameter Accuracy Unit Calibration Note

Transceiver Internal Temperature

± 3℃

℃

Internal

T

C=-20~+85℃

Power Supply Internal Voltage ± 3%

V Internal VCC=3.3V±5%

TX Bias Current ± 10%

mA Internal Specified by nominal bias value

TX Optical Power ± 3dB

dBm Internal Not support in burst ONU

RX Optical Power ± 3dB

dBm Internal -26 to -3dBm

Note. Temperature and Voltage is measured internal to the transceiver.

BiasCNT

Interval of BiasCNT Signal

BiasCNT Enable Duration