Page 1
PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2 APRIL 94
FEATURES
* 15 Volt V
* Gain of 300 at IC=2 Amps
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Flash gun convertors
* Battery powered circuits
* Motor drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Practical Power Dissipation* P
Power Dissipation at T
Operating and Storage Temperature Range tj:tstg -55 to +200 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
CEO
=25°C
amb
derate above 25°C
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
CBO
CEO
EBO
CM
C
totp
P
tot
= 25°C)
amb
-15 V
-15 V IC=-10mA*
-5 V
-0.1
-0.1
-0.15
-0.25
-0.45
-0.9 V IC=-1A, IB=-5mA*
-0.75 V IC=-1A, VCE=-2V*
500
1500 I
400
300
150
3-273
ZTX788B
C
B
E
TO92 Compatible
-15 V
-15 V
-5 V
-8 A
-3 A
1.5 W
1
5.7
=-100µA
I
C
=-100µA
I
E
V
µA
µA
V
V
V
=-10V
CB
V
=-4V
EB
I
=-0.5A, IB=-2.5mA*
C
I
=-1A, IB=-5mA*
C
=-2A, IB=-10mA*
I
C
=-10mA, VCE=-2V*
C
=-1A, VCE=-2V*
I
C
I
=-2A, VCE=-2V*
C
=-6A, VCE=-2V*
I
C
E-Line
W
mW/°C
Page 2
ZTX788B
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
T
ibo
obo
on
t
off
*Measured under pulsed conditions. Pulse width=300
100 MHz IC=-50mA, VCE=-5V
f=50MHz
225 pF VEB=-0.5V, f=1MHz
25 pF VCB=-10V, f=1MHz
35
400
ns
IC=-500mA, IB1=-50mA
ns
I
=-50mA, VCC=-10V
B2
µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance: Junction to Ambient
Junction to Ambient
Junction to Case
1
2
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
175
116
70
°C/W
°C/W
°C/W
2.5
tts)
a
2.0
W
(
n
o
1.5
issipati
1.0
D
r
we
0.5
ax Po
0
M
-40 0.0001
T -Temperature (°C)
Case temperature
Ambient temperat
ure
40 60 80 100 120 200180160140
Derating curve
3-274
200
100
Thermal Resistance (°C/W)
D=1 (D.C.)
t
1
D=t
1/tP
t
P
D=0.5
D=0.2
D=0.1
Single Pulse
0
0.001
Pulse Width (seconds)
Maximum transient thermal impedance
10 10010.10.01-20 0 20
Page 3
TYPICAL CHARACTERISTICS
ZTX788B
1.8
1.6
1.4
1.2
olts)
1.0
- (V
0.8
(sat)
E
0.6
C
V
0.4
0.2
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
- Normalised Gain
E
0.2
F
h
0
0
1.6
1.4
1.2
olts)
1.0
- (V
0.8
E
B
0.6
V
0.4
0.2
0
0
IC -
olts)
- (V
at)
s
(
CE
V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
IC/IB=200
IC/IB=100
IC/IB=10
0.01 0.1 1 10
=25°C
T
amb
IC - Collector Current (Amps)
CE(sat)
V
+100°C
+25°C
-55°C
0.01 0.1
Collector Current (Amps)
IC -
v IC
1
VCE=2V
cal Gain
i
yp
- T
E
F
h
olts)
- (V
)
t
(sa
BE
V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1200
900
600
300
10
hFEv IC V
10
-55°C
+25°C
+100°C
0.01 0.1 1 10
Collector Current (Amps)
BE(on)
V
v IC
VCE=2V
1
0.1
- Collector Current (Amps)
C
I
0.01
-55°C
+25°C
+100°C
+175°C
0.01 0.1 1 10
IC/IB=200
IC - Collector Current (Amps)
CE(sat)
V
-55°C
+25°C
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC -
Single Pulse Test at T
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.1 100110
CE
Collector Voltage (Volts)
V
-
BE(sat)
v IC
v IC
IC/IB=200
=25°C
amb
Safe Operating Area
3-275
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