Page 1
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ZTX604
ZTX605
ISSUE 1 MARCH 94
FEATURES
* 120 Volt V
CEO
* 1 Amp continuous current
* Gain of 2K at I
*P
= 1 Watt
tot
=1 Amp
C
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX604 ZTX605 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
derate above 25°C
amb
=25°C
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
P
tot
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL ZTX604 ZTX605 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
120 140 V
100 120 V IC=10mA*
10 10 V
0.01
10
Emitter Cut-Off
Current
Colllector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
0.1 0.1
10
1.0
1.5
1.8 1.8 V IC=1A, IB=1mA*
1.7 1.7 V IC=1A, VCE=5V*
3-212
120 140 V
100 120 V
10 V
4A
1A
1
5.7
-55 to +200 °C
=100µA
I
C
I
=100µA
E
V
0.01
10
10
1.0
1.5VV
µA
µA
µA
µA
µA
µA
CB
V
CB
V
CB
V
CB
V
EB
V
CES
V
CES
IC=250mA, IB=0.25mA*
I
=1A, IB=1mA*
C
=100V
=120V
=100V,T
=120V,T
=8V
=100V
=120V
mW/ °C
=100°C
amb
=100°C
amb
W
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ZTX604
ZTX605
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL ZTX604 ZTX605 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
µs
µs
I
=50mA, VCE=5V
C
=500mA, VCE=5V*
I
C
I
=1A, VCE=5V*
C
=2A, VCE=5V*
I
C
f=20MHz
I
=500mA, VCE=10V
C
=0.5mA
I
B1=IB2
200
Static Forward
Current Transfer Ratio
h
FE
2K
5K
2K
100K
0.5K
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
T
ibo
obo
on
t
off
150 150 MHz IC=100mA, VCE=10V
90 Typical pF VEB=500mV, f=1MHz
15 Typical pF VCB=10V, f=1MHz
0.5 Typical
1.6 Typical
*Measured under pulsed conditions. Pulse width=300
1.0
RS= 1M
RS= ∞
0.8
0.6
DC Conditions
0.4
0.2
0
Maximum Power Dissipation ( W)
1 10 100
RS= 100KΩ
Ω
V
- Collector-Emitter Voltage (Volts)
CE
2K
5K
2K
100K
0.5K
µs. Duty cycle ≤2%
RS= 20KΩ
ZTX604
ZTX605
Voltage Derating Graph
The maximum permissible operational temperature can be obtained from this graph using the
following equation
T
amb(max
T
= Maximum operating ambient temperature
amb(max )
Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V
and source resistance (RS)
Power(actual)= Actual power dissipation in users circuit
Power(max ) − Power(act)
=
)
0.0057
3-213
+25° C
CE
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ZTX604
ZTX605
TYPICAL CHARACTERISTICS
olts)
- (V
at)
s
(
CE
V
olts)
- (V
at)
s
(
BE
V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
-55°C
+25°C
+100°C
+175°C
IC/IB=100
0.01
0.1
IC - Collector Current (Amps)
CE(sat)
V
-55°C
+25°C
+100°C
+175°C
0.01
v IC
IC - Collector Current (Amps)
BE(sat)
V
Single Pulse Test at T
v IC
101
2.5
2.0
1.5
sed to 1 Amp
i
l
a
1.0
rm
o
0.5
- Gain n
E
F
h
0.001
-55°C
+25°C
+100°C
0.01
VCE=5V
100.1 1
IC - Collector Current (Amps)
hFEv IC
2.2
2.0
1.8
1.6
1.4
olts)
V
1.2
(
-
IC/IB=100
=25°C
amb
E
B
1.0
V
0.8
0.6
100.1 1
0.4
-55°C
+25°C
+100°C
VCE=5V
0.01
0.1
110
IC - Collector Current (Amps)
BE(on)
V
v IC
1.0
D.C.
1s
100ms
10ms
1.0ms
0.1
- Collector Current (Amps)
C
I
100µs
0.01
1100010 100
CE
Collector Voltage (Volts)
V
-
Safe Operating Area
ZT
X
60
4
ZTX605
3-214
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