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SHANGHAI SUNRISE ELECTRONICS CO., LTD.
XR-85
SILICON EPITAXIAL
PLANAR SWITCHING DIODE
REVERSE VOLTAGE: 20V
FORWARD CURRENT: 100mA
TECHNICAL
SPECIFICATION
FEATURES
• Small glass structure ensures high reliability
• Low leakage
• High temperature soldering guaranteed:
o
250
C/10S/9.5mm lead length
at 5 lbs tension
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Glass,hermetically sealed
• Polarity: Color band denotes cathode
• Mounting position: Any
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25oC ambient temperature unless otherwise specified)
DO - 34
RATINGS
Reverse Voltage
Peak Reverse Voltage
Forward Current (average)
Forward Voltage (I
Reverse Current (V
Reverse Current (V
Capacitance (Note 1)
Forward Differential Resistor (I
Thermal Resistance
(junction to ambient) (Note 2)
Operating Junction and Storage Temperature Range
Notes:
1: V
2: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
=10V, f=1 MHz
R
=10mA) V
F
=20V) I
R
=20V,TJ=100oC)
R
=10mA, f=100MHz) r
F
SYMBOL VALUE UNITS
V
V
RM
I
O
R1
I
R2
C
F
Rθ(ja)
T
STG,TJ
R
F
t
20 V
35 V
100 mA
1V
100 nA
10 µA
1.5 pF
0.6 Ω
0.35
-55 ~ +150
http://www.sse-diode.com
o
C/mW
o
C
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