GaAlAs Infrared Emitting Diodes
Molde d Lateral Pack ag e — 880 nm
PACKA GE DIMENSIONS inch (mm)
VTE7172, 7173
DESCRIPTION
CASE 7 LATERAL
CHIP SIZE: .011" x .011"
These side-l ookin g packa ges are de signe d for use i n PC boar d mounte d inter rup t detec tor s. The packag e is t ransfer mo lded pl astic
and contains a high efficiency , 880 nm, GaAlAs IRED die.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating: -40°C to 85°C
Continuous Power Dissipation: 100 mW
Derate above 30°C: 1.82 mW/°C
Maximum Continuous Current: 50 mA
Derate above 30°C: 0.91 mA/°C
Peak Forward Current, 10 µs, 100 pps: 2.5 A
T emp. Coefficient of Power Output (Typ.): -.8%/°C
Maximum Reverse Voltage: 5.0V
Maximum Reverse Current @ V
= 5V: 10 µA
R
Peak Wavelength (Typical): 880 nm
Junction Capacitance @ 0V, 1 MHz (Typ.): 14 pF
Response Time @ I
= 20 mA
F
Rise: 1.0 µs Fall: 1.0 µs
Lead Soldering Temperature: 260°C
(1.6 mm from case, 5 seconds max.)
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110)
Output Forward Drop
Irradiance
Part N umber
E
e
2
mW/cm
Min. Typ. mm mm Min. Typ. Typ. Max.
VTE7172 0.4 0.6 16.7 4.6 1.1 2.5 20 1.3 1.8 ±25°
VTE7173 0.6 0.8 16.7 4.6 1.7 5.0 20 1.3 1.8 ±25°
Condition I
distance Diameter mW/sr mW
Radiant
Intensity
e
Tot al Power
P
O
Test
Current
I
FT
mA
(Pulsed)
V
@ I
Volts
F
FT
Half Power Beam
Angle
θ
1/2
Typ.
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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