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GaAlAs Infrared Emitting Diodes
TO-46 Flat W i n dow Package — 880 nm
PACKA GE DIMENSIONS inch (mm)
CASE 24 TO-46 HERMETIC (Flat Window)
DESCRIPTION
This wide beam angle TO-46 hermetic emitter contains a large area, double
wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher
current pulse applications.
VTE1063
CHIP SIZE: .018" x .018"
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating: -55°C to 125°C
Continuous Power Dissipation: 200 mW
Derate above 30°C: 2.11 mW/°C
Maximum Continuous Current: 100 mA
Derate above 30°C: 1.05 mA/°C
Peak Forward Current, 10 µs, 100 pps: 3A
Temp. Coefficient of Power Output (Typ.): -.8%/°C
Maximum Reverse V oltage: 5.0V
Maximum Reverse Current @ V
= 5V: 10 µA
R
Peak Wavelength (Typical): 880 nm
Junction Capacitance @ 0V , 1 MHz (T y p .): 35 pF
Response Time @ I
= 20 mA
F
Rise: 1.0 µs Fall: 1.0 µs
Lead Soldering Temperature: 260°C
(1.6 mm from case, 5 seconds max.)
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110)
Output Forward Drop
Irradiance
Part Number
E
e
2
mW/cm
Min. Typ. mm mm Min. Typ. Typ. Max.
VTE1063 3.8 5.0 36 6.4 49 80 1.0 2.8 3.5 ±35°
Condition I
distance Diameter mW/sr mW
Radiant
Intensity
e
Total Power
P
O
Test
Current
I
FT
mA
(Pulsed)
V
@ I
Volts
F
FT
Half Power Beam
Angle
θ
1/2
Typ.
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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