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GaAlAs Infrared Emitting Diodes
Long T-1 (3 mm) Plastic Package — 880 nm
PACKA GE DIMENSIONS inch (mm)
DESCRIPTION
This nar r ow be am an gl e 3 m m diam eter pl ast ic p ack aged emi tte r i s sui ta ble for u se in op ti cal swit ch ap pli ca tion s. It co nt ain s a sm al l
area, GaAlAs, 880 nm, high efficiency IRED die.
VTE3372LA, 74LA
CASE 50A Long T-1 (3 mm)
CHIP SIZE: .011" x .011"
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating: -40°C to 100°C
Continuous Power Dissipation: 100 mW
Derate above 30°C: 1.43 mW/°C
Maximum Continuous Current: 50 mA
Derate above 30°C: 0.71 mA/°C
Peak Forward Current, 10 µs, 100 pps: 2.5 A
Temp. Coefficient of Power Output (Typ.): -.8%/°C
Maximum Reverse V oltage: 5.0V
Maximum Reverse Current @ V
= 5V: 10 µA
R
Peak Wavelength (Typical): 880 nm
Junction Capacitance @ 0V , 1 MHz (T yp.): 14 pF
Response Time @ I
= 20 mA
F
Rise:1.0 µs Fall: 1.0 µs
Lead Soldering Temperature: 260°C
(1.6 mm from case, 5 seconds max.)
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110)
Output Forward Drop
Irradiance
Part Number
E
e
2
mW/cm
Min. Typ. mm mm Min. Typ. Typ. Max.
VTE3372LA 2.0 2.6 10.16 2. 1 2.0 3.0 20 1.3 1.8 ±10°
VTE3374LA 4.0 5.2 10.16 2. 1 4.1 5.0 20 1.3 1.8 ±10°
Condition I
distance Diameter mW/sr mW
Radiant
Intensity
e
Total Power
P
O
Test
Current
I
FT
mA
(Pulsed)
V
@ I
Volts
F
FT
Half Power Beam
Angle
θ
1/2
Typ.
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, M O 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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