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GaAs Infrared Emitting Diodes
VTE3322LA, 24LA
Long T-1 Plastic Package — 940 nm
PACKAGE DIMENSIONS inch (mm)
CASE 50A LONG T -1
CHIP SIZE: .011" X .011"
DESCRIPTION
This narr ow bea m angle, 3 m m diame t er plastic packages, G aAs, 940 nm emi t ter is suit able for us e i n optica l switch application s.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating: -40°C to 100°C
Continuous Power Dissipation: 100 mW
Derate above 30°C: 1.43 mW/°C
Maximum Continuous Current: 50 mA
Derate above 30°C: 0.71 mA/°C
Peak Forward Current, 10 µs, 100 pps: 3 A
T emp. Coefficient of Power Output (Typ.): -.8%/°C
Maximum Reverse Voltage: 5.0V
Maximum Reverse Current @ V
Peak Wavelength (Typical): 940 nm
Junction Capacitance @ 0V, 1 MHz (Typ.): 14 pF
Response Time @ I
= 20 mA
F
Rise:1.0 µs Fall: 1.0 µs
Lead Soldering Temperature:
(1.6 mm from case, 5 seconds max.
= 5V: 10 µA
R
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 123-124)
Output Forward Drop
Irradiance
Part Number
E
e
2
mW/cm
Min. Typ. mm mm Min. Typ. Typ. Max.
VTE3322LA 1.0 1.3 10.16 2.1 1.0 1.5 20 1.25 1.6 ±10°
VTE3324LA 2.0 2.6 10.16 2.1 2.0 2.5 20 1.25 1.6 ±10°
Condition I
distance Diameter mW/sr mW
Radiant
Intensity
e
Total Power
P
O
Test
Current
I
FT
mA
(Pulsed)
V
@ I
Volts
F
FT
Half Power Beam
Angle
θ
1/2
Typ.
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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