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GaAlAs Infrared Emitting Diodes
T-1¾ (5 mm) Bull et Package — 880 nm
VTE1295
PACKA GE DIMENSIONS inch (mm)
CASE 62 T -1¾ (5 mm) BULLET
DESCRIPTION
This 5 m m diamet er, custo m lens ed device conta ins a medi um area , singl e wi rebonde d, GaA lAs, 88 0 nm hig h effici ency I RED chip.
The custom lens allows this cost effective device to have a very narrow half power beam emission of ±8°. This device is a UL
recognized component for smoke alarm applications (UL file #S3506).
CHIP SIZE: .015" x .015"
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating: -40°C to 100°C
Continuous Power Dissipation: 200 mW
Derate above 30°C: 2.86 mW/°C
Maximum Continuous Current: 100 mA
Derate above 30°C: 1.43 mA/°C
Peak Forward Current, 10 µs, 100 pps: 2.5 A
T emp. Coefficient of Power Output (Typ.): -.8%/°C
Maximum Reverse Voltage: 5.0V
Maximum Reverse Current @ V
= 5V: 10 µA
R
Peak Wavelength (Typical): 880 nm
Junction Capacitance @ 0V, 1 MHz (Typ.): 23 pF
Response Time @ I
= 20 mA
F
Rise: 1.0 µs Fall: 1.0 µs
Lead Soldering Temperature: 260°C
(1.6 mm from case, 5 seconds max.)
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110)
Output Forward Drop
Irradiance
Part Number
E
e
2
mW/cm
Min. Typ. mm mm Min. Typ. Typ. Max.
VTE1295 3.0 5.5 36 6.4 39 20 100 1.5 2.0 ±8°
Condition I
distance Diameter mW/sr mW
Radiant
Intensity
e
Tot al Power
P
O
Test
Current
I
FT
mA
(Pulsed)
V
@ I
Volts
F
FT
Half Power Beam
Angle
θ
1/2
Typ.
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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